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查询STGB3NB60MD供应商
STGP3NB60MD - STGB3NB60MD
N-CHANNEL 3A - 600V TO-220 / D2PAK
PowerMESH™ IGBT
TYPE V
CES
V
CE(sat) (Max)
@25°C
STGP3NB60MD
STGB3NB60MD
■ HIGH INPUT IMPEDANCE
■ LOW ON-VOLTAGE DROP (V
■ OFF LOSSES INCLUDE TAIL CURRENT
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ HIGH FREQUENCY OPERATION
■ CO-PACKAGED WITH TURBOSWITCH™
600 V
600 V
<1.9 V
< 1.9V
cesat
)
I
C
@100°C
3A
3A
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectroni cs has d esigned an advanced family of IGB Ts, the PowerMESH™ IGBTs, with outstanding perfomances.
The suffix "M" identifies a family optimized to
achieve very low switching switching times for high
frequency applications (<20KHZ)
3
1
TO-220
3
2
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ MOTOR CONTROLS
■ SMPS AND PFC AND BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STGP3NB60MD GP3NB60MD TO-220 TUBE
STGB3NB60MDT4 GB3NB60MD
2
PAK
D
TAPE & REEL
1/11June 2003
Page 2
STGP3NB60MD - STGB 3NB60MD
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
V
GE
I
I
I
CM
P
TOT
T
stg
T
() Pulse width limited by safe operating area
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.8 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Collector-Emitter Voltage (VGS=0)
600 V
Gate-Emitter Voltage ±20 V
Collector Current (continuous) at TC= 25°C
C
Collector Current (continuous) at TC= 100°C
C
()
Collector Current (pulsed) 24 A
Total Dissipation at TC= 25°C
6A
3A
68 W
Derating Factor 0.55 W/°C
Storage Temperature – 55 to 150 °C
Max. Operating Junction Temperature 150 °C
j
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS O THERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter Breakdown
IC= 250 µA, VGE=0 600 V
Voltage
I
CES
I
GES
Collector cut-off
=0)
(V
GE
Gate-Emitter Leakage
Current (V
CE
=0)
V
= Max Rating, TC=25°C
CE
= Max Rating, TC= 125 °C
V
CE
V
=±20V,VCE= 0 ±100 nA
GE
50 µA
100 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(sat)
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
V
CE=VGE,IC
VGE=15V,IC=3A
VGE=15V,IC=3A,Tj=125°C
= 250 µA
35V
1.5 1.9 V
1.2 V
2/11
Page 3
STGP3NB60MD - STGB3NB60MD
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
oes
C
res
Q
Q
Q
I
CL
Forward Transconductance
Input Capacitance
ies
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
g
Gate-Emitter Charge
ge
Gate-Collector Charge
gc
Latching Current V
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
(di/dt)
Eon
Turn-on Delay Time
Rise Time
r
Turn-on Current Slope
on
Turn-on Switching Losses
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff
td(
E
tr(V
t
d(off
E
t
t
off
E
t
t
off
E
Cross-over Time
c
)
Off Voltage Rise Time 85 ns
)
Delay Time 120 ns
off
Fall Time 240 ns
f
(**)
Turn-off Switching Loss 175
Total Switching Loss 205
ts
Cross-over Time
c
)
Off Voltage Rise Time 270 ns
off
)
Delay Time 344 ns
Fall Time 515 ns
f
(**)
Turn-off Switching Loss 458
Total Switching Loss 488
ts
VCE=15V,Ic=3A
=25V,f=1MHz,VGE= 0 240
V
CE
=480V,IC=3A,
V
CE
= 15V
V
GE
= 480V, RG=10 Ω
clamp
Tj = 125°C
= 480 V, IC= 3A, RG=10Ω
V
CC
=15V
V
GE
V
= 480 V, IC=3A,RG=10Ω
CC
= 15 V,Tj =125°C
V
GE
V
= 480 V, IC=3A,
cc
RG=10Ω,VGE=15V
V
= 480 V, IC=3A,
cc
RG=10Ω,VGE=15V
Tj = 125 °C
5S
33
6
15
20
2.2
8
20 A
10
4
570
30
330 ns
810 ns
pF
pF
pF
nC
nC
nC
ns
ns
A/µs
µJ
µJ
µJ
µJ
µJ
COLLECTOR-EMITTER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
f
I
fm
V
t
rr
Q
I
rrm
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction t emperature.
(**)Losses include Also the Tail (Jedec Standardization)
Forward Current
Forward Current pulsed
Forward On-Voltage If= 1.5 A
f
Reverse Recovery Time
Reverse Recovery Charge
rr
Reverse Recovery Current
I
= 1.5 A, Tj = 125 °C
f
=3A,VR=35V,
I
f
Tj =125°C, di/dt = 100 A/µs
1.4
1.1
45
70
2.7
3
24
1.9
A
A
V
V
ns
nC
A
3/11
Page 4
STGP3NB60MD - STGB 3NB60MD
Output Characteristics
Transfer Characteri stics
Normalized Collector-Emitter On Voltage vs Temp.Transconductance
Collector-Emitter On V oltage vs Collector Current
4/11
Collector-Emitter On V oltage vs Temperature
Page 5
STGP3NB60MD - STGB3NB60MD
Gate Threshold vs Temperature
Normalized Breakdown Voltage vs Temperature
Gate Charge vs Gate-Emitter VoltageCapacitance Variations
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
5/11
Page 6
STGP3NB60MD - STGB 3NB60MD
Total Switching Losses vs Collector Cu rrent
Turn-Off SOA
Thermal Impedance for TO-220/D²PAK
Emitter-Collector Diode Ch aracteristics
6/11
Page 7
STGP3NB60MD - STGB3NB60MD
Fig. 2: Test Circuit For Induct ive Load SwitchingFig. 1: Gate Charge test Circuit
7/11
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STGP3NB60MD - STGB 3NB60MD
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
8/11
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STGP3NB60MD - STGB3NB60MD
D2PAK MECHANICAL DATA
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
mm. inch
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0º 4º
3
9/11
1
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STGP3NB60MD - STGB 3NB60MD
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* on sales ty pe
10/11
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
1000 1000
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STGP3NB60MD - STGB3NB60MD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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© The ST logo is a registered trademark of STMicroelectronics
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11/11
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