■ Very soft ultra fast recovery antiparallel diode
■ High frequency operation
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advaced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “H” identifies a family
optimized for high frequency application in order
to achieve very high switching performances
(reduced tfall) mantaining a low voltage drop.
1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 17. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
Figure 15. Thermal impedance for TO-220FPFigure 16. Emitter-collector diode
characteristics
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Test circuitSTGB6NC60HD/-1 - STGP6NC60HD - STGF6NC60HD
3 Test circuit
Figure 17. Test circuit for inductive load
switching
Figure 18. Gate charge test circuit
Figure 19. Switching waveformFigure 20. Diode recovery time waveform
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STGB6NC60HD/-1 - STGP6NC60HD - STGF6NC60HDPackage mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at : www.st.com
STGB6NC60HD/-1 - STGP6NC60HD - STGF6NC60HDRevision history
6 Revision history
Table 8.Revision history
DateRevisionChanges
28-Nov-20051First Release
07-Mar-20062Complete version
31-Jul-20063Modified Figure 10.
26-Apr-20074Inserted package I2PA K
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STGB6NC60HD/-1 - STGP6NC60HD - STGF6NC60HD
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