Datasheet STG3685 Datasheet (ST)

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LOW VOLTAGE 0. 5Ω MAX DUAL SPDT SWITCH,

SINGLE ENABLE WITH BREAK BEFORE MAKE FEATURE

■ HIGH SPEED:

t

= 0.3ns (TYP.) at VCC = 3.0V

PD

t

= 0.4ns (TYP.) at VCC = 2.3V

PD

■ ULTRA LOW POWER DISSIPATION:

I

= 0.2µA (MAX.) at TA = 85°C

CC

■ LOW "ON" RESISTANCE V

R

= 0.4Ω (MAX. TA = 25°C) at VCC = 4.2V

ON

R

= 0.5Ω (MAX. TA = 25°C) at VCC = 3.0V

ON

R

= 0.6Ω (MAX. TA = 25°C) at VCC = 2.3V

ON

■ WIDE OPERATING VOLTAGE RANGE:

V

(OPR) = 1.4V to 4.3V SINGLE SUPPLY

CC

■ 4.3V TOLERANT AND 1.8V COMPATIBLE

THRESHOLD ON DIGITAL CONTROL INPUT at V

= 2.3 to 4.3V

■ LA TCH-UP PERFORMANCE EXCEEDS

CC

300mA (JESD 17)

■ ESD PERFORM. (ANALOG CHAN. vs GND):

HBM > 4KV (MIL STD 883 method 3015)

DESCRIPTION

The STG3685 is an high-speed CMOS DUAL ANALOG S.P.D.T. (Single Pole Dual Throw) SWITCH or DUAL 2:1 Multiplexer/Demultiplexer Bus Switch fabricated in silicon gate C technology. It is designed to operate from 1.4V to

4.3V, making this device ideal for portable applications. It offers very low ON-Resistance (<0.5Ω) at V

=3.0V. The IN i nput is p rovided to co ntrol the

CC

switches. The switches nS1 are ON (they are

= 0V:

I

2

MOS

STG3685

PRELIMINARY DATA

Flip-Chip

Table 1: Order Codes

PACKAGE T & R

Flip-Chip9 STG3685BJR

connected to common Ports Dn) when the IN input is held high and OFF (high impedance state exists between the two ports) when IN is held low; the switches nS2 are ON (they are connected to common Po rts Dn) when the I N input is hel d low and OFF (high impedance state exists between the two ports) when IN is held high. Additional key features are fast switching speed, Break Before Make Delay Time and Ultra Low Power Consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them ESD immunity and transient exces s voltage. It’s available in the commercial temperature range Flip-chip package with E poxy Protection.

Figure 1: Pin Con nection (Top Through View) And Schemat ic Ci rc ui t

Rev. 2

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

1/10July 2005

STG3685

Figure 2: Input Equivalent Circuit Table 2: Pin Description

PIN N° SYMBOL

NAME AND

FUNCTION

B2 IN Control

A3, A1 C3, C1

2S1, 1S1 2S2, 1S2

Independent Channels

B3, B1 D2, D1 Common Channels

C2 GND Ground (0V) A2 V

CC

Positive Supply Voltage

Table 3: Truth Table

IN SWITCH S1 SWITCH S2

H ON OFF(*)

L OFF(*) ON

(*) High Im pedance

Table 4: Absolute Maximum Ratings

Symbol Parameter Value Unit

V

I

IKC

I

OK

I

OP

or I

I

CC

P

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. (1) Derate above 70°C: by 18.5 mW/ °C .

CC

IC O

IK

O

stg

Supply Voltage DC Input Voltage -0.5 to VCC + 0.5

I

DC Control Input Voltage DC Output Voltage -0.5 to VCC + 0.5 DC Input Diode Current on control pin (V

IN

< 0V) DC Input Diode Current (VIN < 0V) DC Output Diode Current DC Output Current DC Output Current Peak (pulse at 1ms, 10% duty cycle) DC VCC or Ground Current

GND

Power Dissipation at Ta=70°C (1)

D

Storage Temperature Lead Temperature (10 sec)

L

-0.5 to 4.6 V V

− 50 mA ± 50 mA

± 20 mA ± 300 mA ± 500 mA ± 100 mA

TBD mW

-65 to 150 °C 260 °C

Table 5: Recommended Operating Conditions

Symbol Parameter Value Unit

V

T

dt/dv

1) Truth T abl e guarante ed: 1.2V to 4.3V.

Supply Voltage (note 1)

CC

Input Voltage 0 to V

I

Control Input Voltage

IC

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time Control Input V

= 1.4V to 2.7V

CC

V

= 3.0V to 3.6V

CC

1.4 to 4.3 V

CC

0 to 4.3 V

CC

-55 to 125 °C 0 to 20 0 to 10

2/10

V

ns/V

Table 6: DC Specifications

Test Conditions Value

Symbol Parameter

V

High Level

IH

Input Voltage

V

Low Level

IL

Input Voltage

R

Switch ON

ON

Resistance (See Fig. 12)

R

FLAT

ON Resistance FLATNESS (1)

I

OFF State

OFF

Leakage Current (nSn), (Dn)

Input

I

IN

Leakage Current

I

Quiescent

CCL

Supply Current

I

Quiescent

CCH

Supply Current

V

CC

(V)

1.65-1.95 0.65V

2.3-2.5

2.7-3.0

3.3 1.5 1.5 1.5

3.6

4.3

1.65-1.95 0.40 0.40 0.40

2.3-2.5

2.7-3.6

3.3 0.50 0.50 0.50

3.6

4.3

3.0 300 500 600

2.7 300 500 600

2.3 350 600 800

1.8 550 2000 4000

1.4 1200 2500 5000

4.3

3.0

2.7 0.07 0.15 0.15

2.3

1.65

4.3

0 - 4.3 VIN=0 to 4.3V ±0.1 ± 1 µA

1.65-4.3 VIN=VCC or

4.2 V

STG3685

= 25°C

T

A

Min. Typ. Max. Min. Max. Min. Max.

CC

1.4 1.4 1.4

1.6 1.6 1.6

0.50 0.50 0.50

250 400 500

V

=0V to V

S

CC

IS=100mA

=0 to V

V

S

CC

IS=100mA

VS=0.3 or 4V ±10 ± 100 nA

±0.05 ±0.2 ±1 µA

GND

=1.65V 415 500 µA

IN

=1.8V 360 400

V

IN

=2.6V 120 150

V

IN

-40 to 85°C -55 to 125°C

0.65V

CC

0.65V

CC

Unit

V

mΩ

Ω

Note 1: Flatness is defi ned as the dif fe rence between the maximum and minimum value of on-resistance as measur ed over the speci fied analog signal ranges.

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STG3685

Table 7: AC Electrical Characteristics (CL = 35pF, RL = 50Ω, tr = tf ≤ 5ns)

Test Condition Value

= 25°C

Symbol Parameter

t

PLH, tPHL

t

Propagation Delay 1.65-1.95 0.45

TURN-ON time 1.65-1.95 VS=0.8V

ON

TURN-OFF time 1.65-1.95 VS=0.8V

OFF

Break Before Make Time Delay

t

D

Q Charge injection 1.65-1.95

T

V

CC

(V)

A

Min. Typ. Max. Min. Max. Min. Max.

2.3-2.7 0.40

3.0-3.6 0.30

3.6-4.3 0.30 70

2.3-2.7

V

3.0-3.6 32 50 60

=1.5V

S

32 50 60

3.6-4.3 30 50 60 45

2.3-2.7

V

3.0-3.6 15 30 40

=1.5V

S

25 30 40

3.6-4.3 15 30 40

1.65-1.95

2.3-2.7 2 15

3.0-3.6 2 15

3.6-4.3 2 15

2.3-2.7 40

3.0-3.6 35

3.6-4.3 35

C

=35pF

L

R

L

V

S

C

= 100pF

L

R

= 1MΩ

L

V

GEN

R

GEN

= 50Ω

=1.5V

50

= 0V = 0Ω

-40 to 85°C -55 to 125°C

Unit

ns

pC

Table 8: Analog Switch Characteristics (C

= 5pF, RL = 50Ω, TA = 25°C)

L

Test Condition Value

Symbol Parameter

OIRR Off Isolation (1) 1.65-4.3 V

V

(V)

CC

= 1V

S

Min. Typ. Max. Min. Max. Min. Max.

RMS

f= 100KHz

Xtalk Crosstalk 1.65-4.3 V

= 1V

S

RMS

f= 100KHz

THD Total Harmonic

Distortion

2.3-4.3 R

= 600Ω

L

V

= 2V

I

PP

f = 20Hz to 20kHz

BW -3dB Bandwidth 1.65-4.3 R C

C

Control Pin Input

IN

Capacitance Sn Port Capaci-

Sn

tance D Port Capaci-

C

tance when

D

3.3

= 50Ω

L

f = 1MHz 35

f = 1MHz 91

Switch is Enabled

Note 1: Off Isolation = 20Log10 (VD/VS), VD = output. VS = input at off switch.

= 25°C

T

A

-40 to 85°C -55 to 125°C

-64 dB

-32 dB

0.03 %

50 MHz 10

Unit

pF

4/10

STG3685

Figure 3: On Resistance

Figure 4: Off Leakage

Figure 6: Bandwi dth

Figure 7: Channel To Channel Crosstalk

Figure 5: Off Isolation

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STG3685

Figure 8: Test Circuit

CL = 5/35pF or equivalent (includes jig and probe capacitance)

= 50Ω or equivalent

R

L

R

= Z

of pulse generator (typically 50Ω)

T

OUT

Figure 9: Break Before Make Time Delay

Figure 10: Charge Injection (V

GEN

= 0V, R

= 0Ω, RL = 1MΩ, CL = 100pF)

GEN

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Figure 11: Tur n On, Turn Off Delay Time

TYPICAL CHARACTERISTICS

STG3685

Figure 12: Swit ch-On R

vs VIN

ON

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STG3685

DIM.

A 1.591.641.6962.664.666.5

B 1.421.471.5255.957.959.8

C0.8031.5

D 0.295 0.32 0.345 11.6 12.6 13.6

E 0.5 19.7

F 0.350.400.4513.815.717.7

G 0.25 9.8

Flip-Chip9 MECHANICAL DATA

mm. mils

MIN. TYP MAX. MIN. TYP. MAX.

H 0.061 0.0635 0.066 2.4 2.5 2.6

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Table 9: Revision History

Date Revisio n Description of Change s

13-Jan-2005 1 First Release.

04-Jul-2005 2 The Q Values on Table 7 has been updated.

STG3685

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STG3685

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implic ati o n or ot h er wis e und er an y pat ent or pa te nt r igh ts of STMi cr oe l ect ro ni cs . Sp ec if i cat i on s ment i o ned i n th is p ub li c ati on ar e s ubj ec t to change without notice. This publication supersedes and replaces all information previously suppl ied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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