Page 1
查询STF7NK30Z供应商
N-CHANNEL 300V - 0.80Ω - 5A T O-220/TO-220FP
STP7NK30Z
STF7NK30Z
Zener-Protected SuperMESH™Power MOSF ET
TYPE V
STP7NK30Z
STF7NK30Z
■ TYPICAL R
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING
300 V
300 V
(on) = 0.80 Ω
DS
DSS
R
DS(on)
<0.9Ω
<0.9Ω5A5A
I
D
Pw
50 W
20 W
REPEATIBILITY
DESCRIPTION
The SuperM ESH™ s eries is obtained t hrough an
extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pus hing
on-resistance significantly down,specialcareis taken to ensure a ver y good dv/dt capab ility for the
most dem anding applications. Such series c omplements ST full range of high voltage MOSFETs including revolutionary MDm es h™ products.
TO-220 TO-220FP
1
INTERNAL SCHEMATIC DIAGRAM
3
2
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LIGHTING
ORDER CODES
PART NUMBER MARKING PACKAGE PACKAGING
STP7NK30Z P7NK30Z TO-220 TUBE
STF7NK30Z F7NK30Z TO-220FP TUBE
1/10March 2004
Page 2
STP7NK30Z - STF7NK30Z
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP7NK30Z STF7NK30Z
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
V
ESD(G-S)
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
T
j
T
stg
() Pulse width limited by safe operating area
≤5.7A, di/dt ≤200A/µs, VDD≤ V
(1) I
SD
(*) Limited only by maximum temperature allowed
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
300 V
300 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC=25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 20 20 (*) A
Total Dissipation at TC=25°C
55(*)A
3.2 3.2 (*) A
50 20 W
Derating Factor 0.4 0.16 W/°C
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 2800 V
Insulation Withstand Voltage (DC) - 2500 V
Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj
≤ T
JMAX.
-55to150
-55to150
°C
°C
THERMAL DATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 2.50 6.25 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
=25°C, ID=IAR,VDD=50V)
j
5A
130 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 30 V
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed t o enhance not only the device’s
ESD c apability, but also to make them safely absorb pos sible voltage transients that may occasionally be
applied from gate to source. In this r es pec t the Zener v oltage is appropriate to achieve an efficient and
cost-effective intervention to prote ct the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/10
Page 3
STP7NK30Z - S TF7N K30Z
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=1 mA, VGS= 0 300 V
Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
V
=MaxRating
DS
=MaxRating,TC= 125 °C
V
DS
V
= ± 20V ±10 µA
GS
V
DS=VGS,ID
= 50µA
3 3.75 4.5 V
1
50
VGS=10V,ID= 2.5 A 0.80 0.90 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(1) Forward Transconductance VDS=15 V,ID= 2.5 A 2.5 S
fs
C
oss eq.
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
=25V,f=1MHz,VGS= 0 380
V
DS
74
15
VGS=0V,VDS= 0V to 400V 30 pF
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Delay Time
t
r
g
gs
gd
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=200V,ID=4.5A
R
=4.7Ω VGS=10V
G
(Resistive Load see, Figure 3)
=320V,ID=5A,
V
DD
V
=10V
GS
11
25
13
4.5
7.6
17 nC
µA
µA
pF
pF
pF
ns
ns
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
FallTime
VDD=200V,ID=1.5A
R
=4.7Ω VGS=10V
G
20
10
(Resistive Load see, Figure 3)
t
r(Voff)
t
t
=320V,ID=5A,
Off-voltage Rise Time
f
c
FallTime
Cross-over Time
V
DD
RG=4.7Ω, VGS= 10V
(Inductive Loadsee,Figure5)
8.5
8.5
20
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
ForwardOnVoltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
ISD=5A,VGS=0
I
SD
V
DD
(see test circuit, Figure 5)
= 5 A, di/dt = 100A/µs
=40,Tj= 150°C
154
716
9.3
when VDSincreases from 0 to 80%
oss
5
20
1.6 V
ns
ns
ns
ns
ns
A
A
ns
nC
A
3/10
Page 4
STP7NK30Z - STF7NK 30Z
Safe Operating Area for TO-220FPSafe Operating Area for TO-220
Thermal Impedance for TO-220FPThermal Impedance for TO-220
4/10
Transfer CharacteristicsOutput Characteristics
Page 5
STP7NK30Z - S TF7N K30Z
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-so urce Voltage
Normalized Gate Threshold Voltage vs Temp.
Capacitance Variations
Normalized On Resistance vs Temp erature
5/10
Page 6
STP7NK30Z - STF7NK 30Z
Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature
6/10
Page 7
STP7NK30Z - S TF7N K30Z
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Di ode Recovery Times
Fig. 4: Gate Charge tes t Circuit
7/10
Page 8
STP7NK30Z - STF7NK 30Z
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
8/10
Page 9
TO-220FP MECHANICAL DATA
STP7NK30Z - S TF7N K30Z
DIM.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
E
A
D
B
L3
L6
L7
F1
F
G1
H
F2
123
L4
L2
L5
G
9/10
Page 10
STP7NK30Z - STF7NK 30Z
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of suc h informat ion n or for any in fring ement of paten ts or oth er ri ghts of th ird part ies whic h may resul t from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
http://www.st.com
10/10
Loading...