Datasheet STF4A60 Datasheet (SemiWell)

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SemiWell Semiconductor

Bi-Directional Triode Thyristor

Features

◆ Repetitive Peak Off-State Voltage : 600V

◆ R.M.S On-State Current ( I

◆ High Commutation dv/dt

General Description

This device is suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment.

T(RMS)

= 4 A )

Symbol

TO-220F

STF4A60

UL : E228720

2.T2

○

▼

▲

○

3.Gate

○

1.T1

1

2

3

Absolute Maximum Ratings ( T

= 25°C unless otherwise specified )

J

Symbol Parameter Condition Ratings Units

V

DRM

I

T(RMS)

I

TSM

2

I

P

GM

P

G(AV)

I

GM

V

GM

T

STG

J

Repetitive Peak Off-State Voltage 600 V

= 99 °C

R.M.S On-State Current

Surge On-State Current

t

2

I

t

Peak Gate Power Dissipation 1.5 W Average Gate Power Dissipation 0.1 W Peak Gate Current 1.0 A Peak Gate Voltage 7.0 V Operating Junction Temperature - 40 ~ 125 °C Storage Temperature - 40 ~ 150 °C Mass 2.0 g

T

C

One Cycle, 50Hz/60Hz, Peak, Non-Repetitive

4.0 A

30/33 A

4.5

2

A

s

Aug, 2003. Rev. 1

1/6

STF4A60

Electrical Characteristics

Symbol Items Conditions

V

= V

I

DRM

V

TM

+

I

GT1

-

I

GT1

-

I

GT3

+

V

GT1

-

V

GT1

-

V

GT3

V

GD

(dv/dt)c

I

H

R

th(j-c)

Repetitive Peak Off-State Current

Peak On-State Voltage

D

= 125 °C

T

J

= 6 A, Inst. Measurement

I

T

Ⅰ

Gate Trigger Current

Ⅱ ──

V

D

Ⅲ ──

Ⅰ

Gate Trigger Voltage

Ⅱ ──

V

D

Ⅲ ──

= 125 °C, VD = 1/2 V

Non-Trigger Gate Voltage

Critical Rate of Rise Off-State Voltage at Commutation

T

J

T

= 125 °C, [di/dt]c = -2.0 A/ms,

J

V

D

Holding Current Thermal Impedance Junction to case

, Single Phase, Half Wave

DRM

= 6 V, RL=10 Ω

=2/3 V

DRM

Ratings

Min. Typ. Max.

──

─

──

0.2

5.0

─

──

5.0

──

1.0 mA

1.6 V

20

1.5

─

4.0 °C/W

Unit

mA

V

V/㎲

mA

2/6

Fig 1. Gate Characteristics Fig 2. On-State Voltage

Gate Voltage [V]

1

10

VGM (7V)

PGM (1.5W)

P

(0.1W)

0

10

25 ℃

G(AV)

(1A)

GM

I

2

10

1

10

125 oC

0

10

On-State Current [A]

25 oC

STF4A60

-1

10

1

10

VGD(0.2V)

2

10

Gate Current [mA]

Fig 3. On State Current vs. Maximum Power Dissipation

6.0

5.5

5.0

4.5

4.0

3.5

θ

3.0

2.5

2.0

1.5

Power Dissipation [W]

1.0

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

θ

π

θ

360°

: Conduction Angle

π

2

θ = 180 θ = 150

θ = 120 θ = 90

θ = 60

θ = 30

RMS O n -State C u rrent [A]

Fig 5. Surge On-State Current Rating ( Non-Repetitive )

35

30

25

20

15

10

Surge On-State Current [A]

5

0

10

50Hz

60Hz

1

10

Time (cycles)

-1

10

3

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

On-State Voltage [V]

Fig 4. On State Current vs. Allowable Case Temperature

130

o

C]

o

125

120

115

110

105

100

θ

Allowable Case Temperature [

95

0.00.51.01.52.02.53.03.54.04.55.0

θ

π

θ

360°

: Conduction Angle

π

2

θ = 30 θ = 60 θ = 90 θ = 120

θ = 150 θ = 180

o

RMS On-State Current [A]

Fig 6. Gate Trigger Voltage vs.

Junction Temperature

3

10

2

X 100 (%)

2

10

C)

o

(t

(25

GT

V

1

10

-50 0 50 100 150

Junction Temperature [oC]

+

V

GT1

-

V

GT1

-

V

GT3

3/6

STF4A60

Fig 7. Gate Trigger Current vs.

Junction Temperature

3

10

2

X 100 (%)

10

C)

o

(t

(25

GT

I

GT

I

1

10

-50 0 50 100 150

Junction Temperature [ oC]

Fig 9. Gate Trigger Characteristics Test Circuit

Fig 8. Transient Thermal Impedance

10

C/W]

o

+

I

GT1

-

I

GT1

-

I

GT3

1

Transient Thermal Impedance [

-2

10

-1

10

0

10

Time (sec)

1

10

2

10

4/6

10Ω

6V

▼

▲

10Ω

▼

●

A

R

V

●

G

6V

▲

●

A

V

●

R

10Ω

▼

▲

●

G

6V

A

V

●

Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ

R

G

TO-220F Package Dimension

STF4A60

Dim.

Min. Typ. Max. Min. Typ. Max.

mm Inch

A 10.4 10.6 0.409 0.417 B 6.18 6.44 0.243 0.254 C 9.55 9.81 0.376 0.386 D 13.47 13.73 0.530 0.540 E 6.05 6.15 0.238 0.242

F 1.26 1.36 0.050 0.054 G 3.17 3.43 0.125 0.135 H 1.87 2.13 0.074 0.084

I 2.57 2.83 0.101 0.111

J2.54 0.100 K5.08 0.200

L 2.51 2.62 0.099 0.103 M 1.25 1.55 0.049 0.061 N 0.45 0.63 0.018 0.025 O 0.6 1.0 0.024 0.039

φ

1

φ

2

3.7 0.146

3.2 0.126

1.5 0.059

F

B

C

G

D

A E

φ

1

2

3

J

K

I

H

φ

1

φ

2

L

M

1. T1

2. T2

3. Gate

N

O

5/6

STF4A60

TO-220F Package Dimension, Forming

Dim.

Min. Typ. Max. Min. Typ. Max.

mm Inch

A 10.4 10.6 0.409 0.417 B 6.18 6.44 0.243 0.254 C 9.55 9.81 0.376 0.386 D 8.4 8.66 0.331 0.341 E 6.05 6.15 0.238 0.242

F 1.26 1.36 0.050 0.054 G 3.17 3.43 0.125 0.135 H 1.87 2.13 0.074 0.084

I 2.57 2.83 0.101 0.111

J2.54 0.100 K5.08 0.200

L 2.51 2.62 0.099 0.103 M 1.25 1.55 0.049 0.061 N 0.45 0.63 0.018 0.025 O 0.6 1.0 0.024 0.039 P 5.0 0.197

φ

1

φ

2

3.7 0.146

3.2 0.126

1.5 0.059

6/6

F

B

C

G

D

A E

φ

1

2

3

J

K

I

H

φ

1

φ

2

L

M

1. T1

N

O

P

2. T2

3. Gate