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查询STF3HNK90Z供应商
N-CHANNEL 900V - 3.5Ω - 3A TO-220 - TO-220FP
STP3HNK90Z - STF3HNK90Z
Zener-Protected SuperMESH™Power MOSFET
TYPE V
STP3HNK90Z
STF3HNK90Z
TYPICAL RDS(on) = 3.5 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSICCAPACITANCES
VERY GOOD MANUFACTURING
900 V
900 V
DSS
R
DS(on)
< 4.2 Ω
< 4.2 Ω3A3A
I
D
Pw
90 W
25 W
REPEATIBILITY
DESCRIPTION
The SuperME SH™ series is obtained through an
extreme optimization of S T’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance s ignificantly down, special c are is taken to ensure a very good dv/dt capability for the
most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDm es h™ products.
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP3HNK90Z P3HNK90Z TO-220 TUBE
STF3HNK90Z F3HNK90Z TO-220FP TUBE
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/10August 2003
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STP3HNK90Z - STF3HNK90Z
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP3HNK90Z STF3HNK90Z
V
DS
V
DGR
V
GS
I
D
I
D
IDM()
P
TOT
V
ESD(G-S)
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
T
j
T
stg
() Pulse width limited by safe operating area
(1) I
≤3A, di/dt ≤200A/µs, VDD≤ V
SD
(*) Limited only by maximum temperature a llowed
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
900 V
900 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
33(*)A
1.89 1.89 (*) A
Drain Current (pulsed) 12 12 (*) A
Total Dissipation at TC= 25°C
90 25 W
Derating Factor 0.72 0.2 W/°C
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3000 V
Insulation Withstand Voltage (DC) - 2500 V
Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj≤TJMAX.
-55to150 °C
THERMAL DATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.38 5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
E
AS
Single Pulse Avalanche Energy
(starting T
max)
j
= 25 °C, ID=IAR,VDD=50V)
j
3A
200 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 30 V
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed t o enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integ rated Zener diodes thus avoid the
usage of external components.
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STP3HNK90Z - STF3H N K90Z
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SP ECIFIED)
CASE
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=1mA,VGS= 0 900 V
Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ± 30 V ±10 µA
GS
V
DS=VGS,ID
=50µA
3 3.75 4.5 V
1
50
VGS=10V,ID= 1.5 A 3.5 4.2 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15V,ID= 1.5 A 1.9 S
g
fs
C
oss eq.
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
Capacitance
t
d(on)
t
d(off)
Q
Q
Q
t
r
t
f
g
gs
gd
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
=25V,f=1MHz,VGS= 0 690
V
DS
71
14.4
VGS=0V,VDS= 0V to 720V 88 pF
=450V,ID= 1.5 A
V
DD
RG= 4.7Ω VGS=10V
(Resistive Load see, Figure 3)
23
28
42
27
=720V,ID=3A,
V
DD
VGS=10V
26
5.7
35
13.9
µA
µA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
ISD= 3 A, VGS=0
I
SD
VDD=50V,Tj= 25°C
(see test circuit, Figure 5)
I
SD
V
DD
(see test circuit, Figure 5)
= 3 A, di/dt = 100A/µs
= 3 A, di/dt = 100A/µs
=50V,Tj= 150°C
494
2.4
9.8
628
3.2
10.2
when VDSincreases from 0 to 80%
oss
3
12
1.6 V
A
A
ns
µC
A
ns
µC
A
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STP3HNK90Z - STF3HNK90Z
Safe Operating Area For TO-220
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220
Thermal Impedance For TO-220F P
Output Characteristics
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Transfer Characteristics
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STP3HNK90Z - STF3H N K90Z
Transconductance
Gate Charge vs Gate-so urce Voltage
Static Drain-source O n Resistance
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
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STP3HNK90Z - STF3HNK90Z
Maximum Avalanche Energy vs Temperature
Normalized BVDSS vs TemperatureSource-drain Diode Forward C haracteristics
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STP3HNK90Z - STF3H N K90Z
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Induct ive Load Switching
And Diode Recovery T imes
Fig. 4: Gate Charge test Circuit
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STP3HNK90Z - STF3HNK90Z
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
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STP3HNK90Z - STF3H N K90Z
TO-220FP MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
E
A
D
B
L3
L6
L7
F1
F
G1
H
F2
123
L4
L2
L5
G
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STP3HNK90Z - STF3HNK90Z
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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