Page 1
November 2014
DocID026475 Rev 2
1/20
This is information on a product in full production.
www.st.com
STB24N65M2, STF24N65M2,
STP24N65M2
N-channel 650 V, 0.185 Ω typ., 16 A MDmesh M2
Power MOSFET in D2PAK, TO-220FP and TO-220 packages
Datasheet - production data
Order codes
VDS
R
DS(on)
max
ID
STB24N65M2
650 V
0.23 Ω
16 A
STF24N65M2
STP24N65M2
Order codes
Marking
Package
Packaging
STB24N65M2
24N65M2
D2PAK
Tape and
reel
STF24N65M2
TO-220FP
Tube
STP24N65M2
TO-220
Features
Extremely low gate charge
Figure 1: Internal schematic diagram
Excellent output capacitance (C
100% avalanche tested
Zener-protected
Applications
Switching applications
) profile
oss
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, the devices exhibit low on-resistance
and optimized switching characteristics,
rendering them suitable for the most demanding
high efficiency converters.
Table 1: Device summary
Page 2
Contents
STB24N65M2, STF24N65M2, STP24N65M2
2/20
DocID026475 Rev 2
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 9
4 Package mechanical data ................................ ............................. 10
4.1 D2PAK package information ........................................................... 10
4.2 TO-220FP package information ...................................................... 13
4.3 TO-220 type A package information ................................................ 15
5 Packaging mechanical data .......................................................... 17
6 Revision history ............................................................................ 19
Page 3
STB24N65M2, STF24N65M2, STP24N65M2
Electrical ratings
DocID026475 Rev 2
3/20
Symbol
Parameter
Value
Unit
D2PAK
TO-220
TO-220FP
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
16
16
(1)
A
ID
Drain current (continuous) at TC = 100 °C
10
10
(1)
A
I
DM
(2)
Drain current (pulsed)
64
64
(1)
A
P
TOT
Total dissipation at TC = 25 °C
150
30
W
dv/dt
(3)
Peak diode recovery voltage slope
15
V/ns
dv/dt
(4)
MOSFET dv/dt ruggedness
50
V/ns
V
ISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s; TC = 25 °C)
2500
V
T
stg
Storage temperature
- 55 to 150
°C
Tj
Max. operating junction temperature
Notes:
(1)
Limited by maximum junction temperature.
(2)
Pulse width limited by safe operating area.
(3)
ISD ≤ 16 A, di/dt ≤ 400 A/µs; V
DS(peak)
< V
(BR)DSS
, VDD = 80% V
(BR)DSS
.
(4)
VDS ≤ 520 V
Symbol
Parameter
Value
Unit
D2PAK
TO-220
TO-220FP
R
thj-case
Thermal resistance junction-case max
0.83
4.2
°C/W
R
thj-pcb
Thermal resistance junction-pcb max
(1)
30
°C/W
R
thj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Notes:
(1)
When mounted on 1 inch² FR-4, 2 Oz copper board.
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive (pulse width limited by T
jmax
)
2.2 A EAS
Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50V)
650
mJ
1 Electrical ratings
Table 2: Absolute maximum ratings
Table 3: Thermal data
Table 4: Avalanche characteristics
Page 4
Electrical characteristics
STB24N65M2, STF24N65M2, STP24N65M2
4/20
DocID026475 Rev 2
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown voltage
ID = 1 mA, VGS = 0
650
V
I
DSS
Zero gate voltage
drain current (VGS = 0)
VDS = 650 V
1
µA
VDS = 650 V, TC=125 °C
100
µA
I
GSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
±10
µA
V
GS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2 3 4
V
R
DS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 8 A
0.185
0.23
Ω
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
1060 - pF
C
oss
Output capacitance
-
47.5
-
pF
C
rss
Reverse transfer capacitance
-
1.65 - pF
C
oss eq.
(1)
Equivalent output capacitance
VDS = 0 to 520 V, VGS = 0
-
229 - pF
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0
- 7 - Ω Qg
Total gate charge
VDD = 520 V, ID = 16 A,
VGS = 10 V
-
29 - nC
Qgs
Gate-source charge
-
3.8 - nC
Qgd
Gate-drain charge
-
14 - nC
Notes:
(1)
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when VDS
increases from 0 to 80% V
DSS
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on delay time
VDD = 325 V, ID = 8 A,
RG = 4.7 Ω, VGS = 10 V
-
10 - ns
tr
Rise time
-
9.5 - ns
t
d(off)
Turn-off delay time
-
68 - ns
tf
Fall time
-
25.5 - ns
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5: On /off states
Table 6: Dynamic
Table 7: Switching times
Page 5
STB24N65M2, STF24N65M2, STP24N65M2
Electrical characteristics
DocID026475 Rev 2
5/20
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
16
A
I
SDM
(1)
Source-drain current (pulsed)
-
64
A
V
SD
(2)
Forward on voltage
ISD = 16 A, VGS = 0
-
1.6 V trr
Reverse recovery time
ISD = 16 A, di/dt = 100 A/µs
VDD = 60 V
-
350
ns
Qrr
Reverse recovery charge
-
4.5
µC
I
RRM
Reverse recovery current
-
26 A trr
Reverse recovery time
ISD = 16 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
-
496
ns
Qrr
Reverse recovery charge
-
6.5
µC
I
RRM
Reverse recovery current
-
25.5
A
Notes:
(1)
Pulse width limited by safe operating area.
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 8: Source drain diode
Page 6
Electrical characteristics
STB24N65M2, STF24N65M2, STP24N65M2
6/20
DocID026475 Rev 2
Figure 2: Safe operating area for D2PAK and
TO-220
Figure 3: Thermal impedance for D2PAK and
TO-220
Figure 4: Safe operating area for TO-220FP
Figure 5: Thermal impedance for TO-220FP
Figure 6: Output characteristics
Figure 7: Transfer characteristics
ID
10
5
0
VDS(V)
4
(A)
0
VGS= 7, 8, 9, 10 V
6V
5V
4V
8
15
20
25
12 16 20 24 28
30
35
GIPD180920141533FSR
ID
10
5
0
VGS(V)
2
(A)
0
VDS= 20 V
4
15
20
25
6 8
30
35
GIPD180920141600FSR
2.1 Electrical characteristics (curves)
Page 7
STB24N65M2, STF24N65M2, STP24N65M2
Electrical characteristics
DocID026475 Rev 2
7/20
Figure 8: Gate charge vs gate-source voltage
Figure 9: Static drain-source on-resistance
Figure 10: Capacitance variations
Figure 11: Normalized gate threshold voltage
vs temperature
Figure 12: Normalized on-resistance
Figure 13: Normalized V(BR)DSS vs
temperature
VGS
4
2
0 5 15
Qg(nC)
10
(V)
0
20
6
8
10
12
25
VDS
(V)
0
100
200
300
400
500
600
VDD = 520 V
ID = 16 A
30
VDS
GIPD041020141607FSR
RDS(on)
0.178
0
ID(A)
4
(Ω)
0.175
8
0.181
0.184
VGS= 10V
0.187
12 16
0.190
0.193
0.196
GIPD180920141613FSR
C
10
1
0.1 1 100 VDS(V)10
(pF)
0.1
100
1000
Ciss
Coss
Crss
f= 1 MHz
GIPD041020141619FSR
RDS(on)
1
-75 -25 75
Tj(°C)
25
(norm)
0.2
125
0.6
1.4
1.8
2.2
VGS= 10V
GIPD180920141459FSR
Page 8
Electrical characteristics
STB24N65M2, STF24N65M2, STP24N65M2
8/20
DocID026475 Rev 2
Figure 14: Source-drain diode forward
characteristics
Figure 15: Output capacitance stored energy
VSD
0.7
0 4 12
ISD(A)
8
(V)
0.5
0.6
0.8
0.9
Tj= 150°C
Tj= -50°C
Tj= 25°C
16
1
1.1
GIPD041020141624FSR
E
2
0 100 300
VDS(V)
200
(µJ)
0
400 500 600
4
6
8
GIPD041020141629FSR
Page 9
STB24N65M2, STF24N65M2, STP24N65M2
Test circuits
DocID026475 Rev 2
9/20
Figure 16: Switching times test circuit for
resistive load
Figure 17: Gate charge test circuit
Figure 18: Test circuit for inductive load
switching and diode recovery times
Figure 19: Unclamped inductive load test
circuit
Figure 20: Unclamped inductive waveform
Figure 21: Switching time waveform
3 Test circuits
Page 10
Package mechanical data
STB24N65M2, STF24N65M2, STP24N65M2
10/20
DocID026475 Rev 2
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1 D2PAK package information
Figure 22: D²PAK (TO-263) drawing
Page 11
STB24N65M2, STF24N65M2, STP24N65M2
Package mechanical data
DocID026475 Rev 2
11/20
Dim.
mm
Min.
Typ.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10
10.40
E1
8.50
8.70
8.90
E2
6.85
7.05
7.25
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
0.4
V2
0°
8°
Table 9: D²PAK (TO-263) mechanical data
Page 12
Package mechanical data
STB24N65M2, STF24N65M2, STP24N65M2
12/20
DocID026475 Rev 2
All the dimensions are in millimeters.
Figure 23: D²PAK footprint
Page 13
STB24N65M2, STF24N65M2, STP24N65M2
Package mechanical data
DocID026475 Rev 2
13/20
4.2 TO-220FP package information
Figure 24: TO-220FP package outline
Page 14
Package mechanical data
STB24N65M2, STF24N65M2, STP24N65M2
14/20
DocID026475 Rev 2
Dim.
mm
Min.
Typ.
Max.
A
4.4
4.6 B 2.5
2.7 D 2.5
2.75
E
0.45
0.7
F
0.75 1 F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7 H 10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7 9 9.3
Dia 3 3.2
Table 10: TO-220FP mechanical data
Page 15
STB24N65M2, STF24N65M2, STP24N65M2
Package mechanical data
DocID026475 Rev 2
15/20
4.3 TO-220 type A package information
Figure 25: TO-220 type A package outline
Page 16
Package mechanical data
STB24N65M2, STF24N65M2, STP24N65M2
16/20
DocID026475 Rev 2
Dim.
mm
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
1.27 E 10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72 L 13
14
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
Table 11: TO-220 type A mechanical data
Page 17
STB24N65M2, STF24N65M2, STP24N65M2
Packaging mechanical data
DocID026475 Rev 2
17/20
5 Packaging mechanical data
Figure 26: Tape
Page 18
Packaging mechanical data
STB24N65M2, STF24N65M2, STP24N65M2
18/20
DocID026475 Rev 2
Tape
Reel
Dim.
mm
Dim.
mm
Min.
Max.
Min.
Max.
A0
10.5
10.7 A 330
B0
15.7
15.9
B
1.5 D 1.5
1.6 C 12.8
13.2
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
26.4
F
11.4
11.6
N
100
K0
4.8
5.0 T 30.4
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000 R 50 T
0.25
0.35
W
23.7
24.3
A
D
B
Full radius
Tape slot
In core for
Tape start
2.5mm min.width
G measured
At hub
C
N
40mm min.
Access hole
At slot location
T
AM06038v1
Figure 27: Reel
Table 12: D²PAK (TO-263) tape and reel mechanical data
Page 19
STB24N65M2, STF24N65M2, STP24N65M2
Revision history
DocID026475 Rev 2
19/20
Date
Revision
Changes
09-Jun-2014
1
First release.
11-Nov-2014
2
Document status promoted from preliminary to production data.
6 Revision history
Table 13: Document revision history
Page 20
STB24N65M2, STF24N65M2, STP24N65M2
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DocID026475 Rev 2
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