Datasheet STP21NM50N, STF21NM50N, STW21NM50N, STB21NM50N, STB21NM50N-1 Datasheet (ST)

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查询STB21NM50N供应商

STP21NM50N-STF21NM50N-STW21NM50N

STB21NM50N - STB21NM50N-1

N-CH A NNEL 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247

SECOND GENERATION MDmesh™ MOSFET

Table 1: General Features

TYPE V

STB21NM50N
STB21NM50N-1
STF21NM50N
STP21NM50N
STW21NM50N

■ 100% AVALANCHE TESTED

■ LOW INPUT CAPACITANCE AND GATE

DSS

(@Tjmax)

550 V
550 V
550 V
550 V
550 V

R

DS(on)

< 0.19 Ω
< 0.19 Ω
< 0.19 Ω
< 0.19 Ω
< 0.19 Ω

I

D

18 A
18 A

18 A (*)

18 A
18 A

CHARGE

■ LOW GATE INPUT RESISTANCE

DESCRIPTION

The STx21NM50N is realized with the second
generation of MDmesh Techno logy. This revolu

­tionary MOSFET associates a new vertical struc­ture to the Comp any's strip layout to yield one of
the world's lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high
efficiency converters

APPLICATIONS

The MDmesh™ II family is very suitable for in­creasing power density of high voltage converters
allowing system miniaturization and higher effi

­ciencies.

Figure 1: Package

2

TO-247

TO-220

I2PAK

1

2

TO-220FP

2

Figure 2: Internal Schematic Diagram

D

2

PAK

1

2

Table 2: Order Codes

SALES TYPE MARKING PACKAGE PACKAGING

STB21NM50N B21NM50N

STB21NM50N-1 B21NM50N

STF21NM50N F21NM50N TO-220FP TUBE
STP21NM50N P21NM50N TO-220 TUBE

STW21NM50N W21NM50N TO-247 TUBE

D2PAK

I2PAK

TAPE & REEL

TUBE

Rev. 3

1/16October 2005

STP21NM50N - STF21NM50N - STB21NM 50N - STB21NM50N-1 - STW21NM50N

Table 3: Absolute Maximum ratings

Symbol Parameter Value Unit

TO-220 / D2PAK / I2PAK

/ TO-247

V

DS

V

DGR

V

GS

I

D

I

D

IDM ()

P

TOT

Drain-source Voltage (VGS = 0) 500 V
Drain-gate Voltage (RGS = 20 kΩ) 500 V
Gate- source Voltage ±25 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C

18 18 (*) A

11 11 (*) A
Drain Current (pulsed) 72 72 (*) A
Total Dissipation at TC = 25°C

140 30 W

Derating Factor 1.12 0.23 W/°C

dv/dt(1) Peak Diode Recovery voltage slope 15 V/ns

Viso Insulation Winthstand Voltage (DC) -- 2500 V

T

stg

T

Storage Temperature
Max. Operating Junction Temperature

j

–55 to 150

150

() Pulse width l i mited by safe operating area

(*) Limited only by maximum temperature allowed
(1) ISD ≤ 18 A, di/dt ≤ 40 0 A / µs, VDD =80% V

(BR)DSS

TO-220FP

°C

Table 4: Thermal Data

TO-220 / D²PAK / I²PAK

/ TO-247

Rthj-case Thermal Resistance Junction-case Max 0.89 4.21 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

Table 5: Avalanche Characteristics

Maximum Lead T emperature For Soldering

l

Purpose

300 °C

Symbol Parameter Max Value Unit

I

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)

E

AS

Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

TO-220FP

9 A

480 mJ

2/16

STP21NM50N - STF21NM50N - ST B21NM50N - STB21NM50N-1 - STW21NM50N

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

Table 6: On/Off

Symbol Parameter Test Conditions Value Unit

Min. Typ. Max.

V

(BR)DSS

Drain-source

ID = 1mA, VGS = 0 500 V

Breakdown Voltage

dv/dt(2) Drain Source Voltage

Vdd=400V, Id=25A, Vgs=10V 44 V/ns

Slope

I

DSS

Zero Gate Voltage
Drain Current (VGS = 0)

VDS = Max Rating
VDS = Max Rating

1

10

TC = 125 °C

I

GSS

Gate-body Leaka ge

VGS = ± 20V 100 nA

Current (VDS = 0)

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 3 4 V
Static Drain-source On

VGS = 10V, ID = 9 A 0.150 0.190 Ω

Resistance

(2) Cha rac teristic va l ue at turn off on inductive loa d

Table 7: Dynamic

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(1) Forward Transconductance VDS = 15 V, ID = 9 A

fs

C

oss eq.

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(*) E quiv alent Outpu t

VDS = 25V, f = 1 MHz, VGS = 0 1950

VGS = 0V, VDS = 0V to 400V 270 pF

Capacitance

t

d(on)

t

d(off)

Q
Q
Q

R

t

r

t

f

g

gs

gd

g

Turn-on Delay Time
Rise Time
Off-voltageRise Time

VDD =250 V, ID = 9 A
RG = 4.7Ω VGS = 10 V
(see Figure 18)

Fall Time
Total Gate Charge

Gate-Source Charge
Gate-Drain Charge

VDD = 400V, ID = 18 A,
VGS = 10V,
(see Figure 21)

Gate Input Resistance f=1MHz Gate DC Bias=0

Test Signal Level=20mV
Open Drain

(*) C

is defined as a co nstant equi valent capaci tance giving the same charging time as C

oss eq.

when VDS increases from 0 to 80% V

oss

12 S

420

60

22
18
90
30

65
10
30

1.6 Ω

µA
µA

pF
pF
pF

ns
ns
ns
ns

nC
nC
nC

DSS

Table 8: Source Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

t

rr

Q

rr

I

RRM

Note: 1. Puls ed: Pulse du rat i on = 300 µs, d uty cycle 1.5 % .

Source-drain Current
Source-drain Current (pulsed)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

ISD = 18 A, VGS = 0
ISD = 18 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 25°C
(see Figure 19)

ISD = 18A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150°C
(see Figure 19)

360

5

27

640

6.5
27

18
72

1.5 V

A
A

ns

µC

A

ns

µC

A

3/16

STP21NM50N - STF21NM50N - STB21NM 50N - STB21NM50N-1 - STW21NM50N

Figure 3: Safe Operating Area For TO-220

Figure 4: Safe Operating Area For TO-220FP

Figure 6: Thermal Impedance For TO-220

Figure 7: Thermal Impedance For TO-220FP

Figure 5: Output Characteristics

4/16

Figure 8: Transfer Characteristics

STP21NM50N - STF21NM50N - ST B21NM50N - STB21NM50N-1 - STW21NM50N

Figure 9: Transconductance

Figure 10: Gate Charge vs Gate-source Voltage

Figure 12: Static Drain-source On Resistance

Figure 13: Capacitance Variations

Figure 11: Normalized Gate Threshold Voltage
vs Tem pera tur e

Figure 14: Normal ized On R esistance vs Tem­perature

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STP21NM50N - STF21NM50N - STB21NM 50N - STB21NM50N-1 - STW21NM50N

Figure 15: S ource-Drain Forward Char acteris­tics

Figure 16: Normalized BVdss vs Temperature

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STP21NM50N - STF21NM50N - ST B21NM50N - STB21NM50N-1 - STW21NM50N

Figure 17: Unclamped Inductive Load Test Cir­cuit

Figure 18: Switching Times Test Circuit For
Resistive Load

Figure 20: Unclamped Inductive Wafeform

Figure 21: Gate Charge Test Circuit

Figure 19: Test Circuit For Inductive Load
Switching and Diode Recovery Times

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STP21NM50N - STF21NM50N - STB21NM 50N - STB21NM50N-1 - STW21NM50N

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, i n compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at:

www.st.com

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STP21NM50N - STF21NM50N - ST B21NM50N - STB21NM50N-1 - STW21NM50N

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

T APE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

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STP21NM50N - STF21NM50N - STB21NM 50N - STB21NM50N-1 - STW21NM50N

D2PAK MECHANICAL DATA

TO-247 MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368
D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

M 2.4 3.2 0.094 0.126

R0.4 0.015
V2 0º 4º

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

10/16

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STP21NM50N - STF21NM50N - ST B21NM50N - STB21NM50N-1 - STW21NM50N

TO-262 (I2PAK) MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181

A1 2.40 2.72 0.094 0.107

b 0.61 0.88 0.024 0.034

b1 1.14 1.70 0.044 0.066

c 0.49 0.70 0.019 0.027

c2 1.23 1.32 0.048 0.052

D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

E 10 10.40 0.393 0.410
L 13 14 0.511 0.551

L1 3.50 3.93 0.137 0.154
L2 1.27 1.40 0.050 0.055

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

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STP21NM50N - STF21NM50N - STB21NM 50N - STB21NM50N-1 - STW21NM50N

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154

L20 16.40 0.645
L30 28.90 1.137

øP

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. M AX.

3.75 3.85 0.147 0.151

mm. inch

12/16

STP21NM50N - STF21NM50N - ST B21NM50N - STB21NM50N-1 - STW21NM50N

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

F1

F

G1

H

F2

123

L4

L2

L5

G

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STP21NM50N - STF21NM50N - STB21NM 50N - STB21NM50N-1 - STW21NM50N

TO-247 MECHANICAL DATA

DIM.

A 4.85 5.15 0.19 0.20

A1 2.20 2.60 0.086 0.102

b 1.0 1.40 0.039 0.055
b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134

c 0.40 0.80 0.015 0.03

D 19.85 20.15 0.781 0.793
E 15.45 15.75 0.608 0.620

e5.45 0.214

L 14.20 14.80 0.560 0.582
L1 3.70 4.30 0.14 0.17
L2 18.50 0.728

øP 3.55 3.65 0.140 0.143
øR 4.50 5.50 0.177 0.216

S5.50 0.216

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

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STP21NM50N - STF21NM50N - ST B21NM50N - STB21NM50N-1 - STW21NM50N

Table 9: Revision History

Date Revision Description of Changes

07-Sep-2005 1 First Release.
28-Sep-2005 2 Symbol changed in Table 5

14-Oct-2005 3 Modified curves 5,8

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STP21NM50N - STF21NM50N - STB21NM 50N - STB21NM50N-1 - STW21NM50N

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