Datasheet STE38NB50F Datasheet (SGS Thomson Microelectronics)



STE38NB50F

N - CHANNEL 500V- 0.11

TYPE V

DSS

ST E38NB50F 500 V < 0 . 14 Ω 38 A

■ TYPICALR

■ EXTREMELYHIGH dv/dt CAPABILITY

■ ± 30V GATE TO SOURCE VOLTAGERATING

■ 100%AVALANCHETESTED

■ LOW INTRINSICCAPACITANCE

■ GATECHARGE MINIMIZED

■ REDUCEDVOLTAGESPREAD

DS(on)

= 0.11 Ω

DESCRIPTION

Using the latest high voltage MESH OVERLAY
process, STMicroelectronicshas designed an ad­vanced family of power MOSFETs with outstand­ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switchingcharacteristics.

R

DS(on)

I

D



Ω

- 38A - ISOTOP

PowerMESH MOSFET

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■ HIGHCURRENT, HIGH SPEED SWITCHING

■ SWITCHMODE POWER SUPPLY (SMPS)

■ DC-AC CONVERTERFOR WELDING

EQUIPMENTANDUNINTERRUPTABLE
POWERSUPPLY AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Value Unit

V

V

V

I

DM

P

dv/dt

T

(•) Pulse width limited by safe operating area (1)ISD≤38 A, di/dt ≤ 200 A/µs, VDD≤ V

December 1999

Drain-source Volt age (VGS= 0) 500 V

DS

Drain- g at e Voltag e (RGS=20kΩ) 500 V

DGR

Gate-s ource Voltage

GS

I

Drain C urrent (continu ous ) at Tc=25oC38A

D

I

Drain C urrent (continu ous ) at Tc=100oC24A

D

30 V

±

(•) Drain C urrent (pulsed) 152 A

Tot al Diss i pat ion at Tc=25oC 400 W

tot

Derat ing Fact or 3.2 W/

(1) Peak Diode R ecov e ry volt ag e slope 4.5 V/ns

Sto rage Temper at ur e -65 to 150

stg

T

Max. Oper a t ing Junction Temperature 150

j

(BR)DSS,Tj≤TJMAX

o

C

o

C

o

C

1/8

STE38NB50F

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

Ther mal Resistance J unction- ca se Max
Ther mal Resistance J unction- am bie nt Max
Ther mal Resistance C ase-sink Ty p
Maximum Lead T e m perature For So lder ing Purpose

l

Avalanche Current, Repetitive or Not-Repetiti ve
(pulse width limited by T

Single Pul s e Avalanc he E ner gy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max)

j

0.31
30

0.1

300

38 A

1200 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS= 0 500 V

Break dow n Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gat e- bod y Leak ag e
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc= 125oC

V

DS

V

=± 30 V

GS

10

100

100 nA

±

ON(∗)

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID= 250 µA 345V
Sta t ic Drain-s ource On

VGS=10V ID= 1 9 A 0.11 0.14

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

38 A

VGS=10V

DYNAMIC

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input Capaci t anc e

iss

Out put Capac it ance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on)maxID

=19A 27 S

VDS=25V f=1MHz VGS= 0 5900

880

80

µ
µA

Ω

pF
pF
pF

A

2/8

STE38NB50F

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

t

d(on)

t

r

Turn-on Time
Rise Tim e

VDD=250V ID=19A
R

=4.7

G

Ω

VGS=10V

45
35

(see test circuit, figure 3)

Q
Q
Q

Tot al Gate Charge

g

Gat e- Source Charg e

gs

Gate-Drain Charge

gd

VDD= 400 V ID=38A VGS= 10 V 140

38
61

196 nC

SWITCHING OFF

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

t

r(Voff)

t

t

Off-voltage Rise Time
Fall T ime

f

Cross-over Time

c

VDD=400V ID=38A

=4.7 Ω VGS=10V

R

G

(see test circuit, figure 5)

28
30
60

SOURCEDRAINDIODE

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

I

V

I

SDM

SD

Q

I

RRM

SD

t

Source-drain Current

(•)

Source-drain Current

38

152

(pulsed)

(∗)ForwardOnVoltage ISD=38A VGS=0 1.6 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 38 A di/dt = 100 A/µs

= 100 V Tj=150oC

V

DD

(see test circuit, figure 5)

715

11.8
Charge
Reverse Recovery

33

Current

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µ

A

C

(∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

SafeOperating Area ThermalImpedance

3/8

STE38NB50F

OutputCharacteristics

Transconductance

TransferCharacteristics

Static Drain-sourceOn Resistance

Gate Charge vs Gate-sourceVoltage

4/8

CapacitanceVariations

STE38NB50F

NormalizedGate ThresholdVoltage vs
Temperature

Source-drainDiode Forward Characteristics

NormalizedOn Resistancevs Temperature

5/8

STE38NB50F

Fig. 1:

UnclampedInductiveLoad Test Circuit

Fig. 3: Switching Times Test CircuitsFor
ResistiveLoad

Fig. 2:

UnclampedInductive Waveform

Fig. 4: GateChargetest Circuit

Fig. 5:

Test CircuitFor InductiveLoad Switching

And Diode Recovery Times

6/8

ISOTOPMECHANICALDATA

STE38NB50F

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 11.8 12.2 0.466 0.480
B 8.9 9.1 0.350 0.358
C 1.95 2.05 0.076 0.080
D 0.75 0.85 0.029 0.033
E 12.6 12.8 0.496 0.503
F 25.15 25.5 0.990 1.003
G 31.5 31.7 1.240 1.248
H 4 0.157

J 4.1 4.3 0.161 0.169
K 14.9 15.1 0.586 0.594
L 30.1 30.3 1.185 1.193

M 37.8 38.2 1.488 1.503

N 4 0.157
O 7.8 8.2 0.307 0.322

mm inch

G

A

B

O

N

D

E

F

H

J

C

K
L

M

7/8

STE38NB50F

Information furnished is believed tobeaccurateand reliable.However, STMicroelectronics assumesno responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may resultfrom its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are
subjecttochange without notice. This publication supersedes and replaces all information previouslysupplied.STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a trademark of STMicroelectronics

 1999 STMicroelectronics – Printed in Italy – All Rights Reserved

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