Page 1
STE26NA90
N - CHANNEL 900V - 0.25Ω - 26A - ISOTOP
FAST POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST E26NA90 900 V < 0. 3 Ω 26 A
■ TYPICALR
30V GATE TO SOURCEVOLTAGERATING
■
±
■ 100%AVALANCHETESTED
■ LOW INTRINSICCAPACITANCE
■ GATECHARGE MINIMIZED
■ REDUCEDVOLTAGESPREAD
DS(on)
= 0.25 Ω
APPLICATIONS
■ HIGHCURRENT, HIGH SPEED SWITCHING
■ SWITCHMODE POWER SUPPLY (SMPS)
■ DC-AC CONVERTERFOR WELDING
EQUIPMENTANDUNINTERRUPTABLE
POWERSUPPLY AND MOTOR DRIVE
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Unit
V
V
V
I
DM
P
T
V
(•) Pulsewidth limited by safeoperating area
October 1998
Drain-source V oltage (VGS= 0) 900 V
DS
Drain- gat e V oltage (RGS=20kΩ) 900 V
DGR
Gate-s ource Voltage
GS
I
Drain Current (cont inu ous) at Tc=25oC26A
D
I
Drain Current (cont inu ous) at Tc=100oC16.2A
D
30 V
±
(•) Drain Current (pulsed) 104 A
Tot al Dissipat ion at Tc=25oC 450 W
tot
Derat ing Fac tor 3.6 W/
Sto rage T emperature -55 to 150
stg
T
Max. Opera t ing Junc t ion Tem perature 150
j
Ins ulat i on Wi t hst an d V olt ag e ( AC-RMS) 2500 V
ISO
o
C
o
C
o
C
1/8
Page 2
STE26NA90
THERMAL DATA
R
thj-case
R
thc-h
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Case-heatsink Wit h Conductive
Gr ease Applied Max
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Puls e Av alan che E nergy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
0.27
0.05
13 A
3000 mJ
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-source
ID=500µAVGS= 0 900 V
Break dow n Vo ltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
= ± 30 V ± 200 nA
V
GS
250
1000
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=V
Sta t ic Dr ain -s ource O n
VGS=10V ID= 13 A 0.25 0.3 Ω
GS
ID=1mA 2.25 3 3.75 V
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on )max
26 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input C apac i t ance
iss
Out put Capacit ance
oss
Reverse T r ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )max
ID=13A 15 S
VDS=25V f=1MHz VGS=0 13600
1130
270
17700
1470
350
µA
µ
pF
pF
pF
A
2/8
Page 3
STE26NA90
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
t
d(on)
t
r
Turn-on Time
Rise T i me
VDD=450V ID=12A
R
=4.7
G
Ω
VGS=10V
40
52
56
73
(see test circuit, figure 3)
Q
Q
Q
Tot al G at e Char ge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD= 720 V ID=26A VGS= 10 V 470
43
226
660 nC
SWITCHING OFF
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
t
r(Voff)
t
t
Off-volt age Rise T ime
Fall T ime
f
Cross-over T ime
c
VDD=720V ID=26A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
108
25
145
152
35
203
SOURCEDRAINDIODE
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
I
SDM
V
I
SD
Q
I
RRM
SD
t
Source-drain Current
(•)
Source-drain Current
26
104
(pulsed)
(∗)ForwardOnVoltage ISD=26A VGS=0 1.6 V
Reverse Re covery
rr
Time
Reverse Re covery
rr
ISD= 26 A di/ dt = 100 A /µs
= 100 V Tj=150oC
V
DD
(see test circuit, figure 5)
1.3
38
Charge
Reverse Re covery
58
Current
ns
ns
nC
nC
ns
ns
ns
A
A
µ
µ
A
s
C
(∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
SafeOperating Area ThermalImpedance
3/8
Page 4
STE26NA90
OutputCharacteristics
Transconductance
TransferCharacteristics
Static Drain-sourceOn Resistance
Gate Charge vs Gate-sourceVoltage
4/8
CapacitanceVariations
Page 5
STE26NA90
NormalizedGate ThresholdVoltage vs
Temperature
Source-drainDiode Forward Characteristics
NormalizedOn Resistancevs Temperature
5/8
Page 6
STE26NA90
Fig. 1:
UnclampedInductiveLoad TestCircuit
Fig. 3: Switching Times Test CircuitsFor
ResistiveLoad
Fig. 2:
UnclampedInductiveWaveform
Fig. 4: Gate Charge test Circuit
Fig. 5:
Test CircuitFor InductiveLoad Switching
And Diode Recovery Times
6/8
Page 7
ISOTOPMECHANICALDATA
STE26NA90
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.8 12.2 0.466 0.480
B 8.9 9.1 0.350 0.358
C 1.95 2.05 0.076 0.080
D 0.75 0.85 0.029 0.033
E 12.6 12.8 0.496 0.503
F 25.15 25.5 0.990 1.003
G 31.5 31.7 1.240 1.248
H 4 0.157
J 4.1 4.3 0.161 0.169
K 14.9 15.1 0.586 0.594
L 30.1 30.3 1.185 1.193
M 37.8 38.2 1.488 1.503
N 4 0.157
O 7.8 8.2 0.307 0.322
mm inch
G
A
B
O
N
D
E
F
H
J
C
K
L
M
7/8
Page 8
STE26NA90
Information furnished is believed to beaccurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademarkof STMicroelectronics
1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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