Page 1
STD9N10L
N - CHANNEL 100V - 0.22Ω - 9A IPAK/DPAK
POWER MOS TRANSISTOR
TYPE V
DSS
R
DS(on)
I
D
STD9N10L 100 V < 0.27 Ω 9 A
■
TYPICAL R
■
AVALANCHE RUGG ED TECHNOLO GY
■
100% AVALANCHE TESTED
■
REPETITIVE AVALANCHE DATA AT 100oC
■
HIGH CURRENT CAPABILITY
■
175oC OPERATING TEMPERATURE
■
HIGH dV/dt RUGGEDNESS
■
APPLICATION ORIENTED
DS(on)
= 0.22
Ω
CHARACTERIZATION
■
SURFACE-MOU NTING DPAK (TO-252)
POWER PACKAGE IN TA PE & REEL
(SUFFIX "T4")
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCH ING
■
POWER MOTOR CONTROL
■
DC-DC & DC-AC CONVERTERS
■
SYNCRONOUS RECTIFICATION
3
2
IPAK
TO-251
(Suffix "-1")
1
(Suffix "T4")
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dV/dt(
T
(•) Pulse width limited by safe operating area
April 2000
Drain-source Voltage (VGS = 0) 100 V
DS
Drain- gate Voltage (RGS = 20 kΩ)100V
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (continuous) at Tc = 25 oC9A
D
I
Drain Current (continuous) at Tc = 100 oC6.4A
D
(•) Drain Current (pulsed) 36 A
Total Dissipation at Tc = 25 oC45W
tot
Derating Factor 0.3 W/
) Peak Diode Recovery voltage slope 7 V/ns
1
Storage Temperature -65 to 175
stg
T
Max. Operating Junction Temperature 175
j
o
C
o
C
o
C
1/6
Page 2
STD9N10L
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERIST ICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
max)
j
DD
= 25 V)
3.33
100
1.5
275
9A
25 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID = 250 µA V
= 0 100 V
GS
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating x 0.8 Tc = 125 oC
DS
= ± 15 V ± 100 nA
V
GS
10
100
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage V
Static Drain-source On
Resistance
= VGS ID = 250 µA 1 1.7 2.5 V
DS
VGS = 5V ID = 4.5 A
V
= 10V ID = 4.5 A Tc = 100oC
GS
On State Drain Current VDS > I
V
= 5 V
GS
D(on)
x R
DS(on)max
0.22
0.21
9A
0.27
0.25
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 4.5 A 4 7 S
= 0 520
GS
90
30
700
120
40
µA
µA
Ω
Ω
pF
pF
pF
2/6
®
Page 3
STD9N10L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
= 50 V ID = 4.5 A
DD
R
= 4.7 Ω VGS = 5 V
G
10
25
14
35
ns
ns
Q
Q
Q
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
V
= 80 V ID = 9 A V
DD
= 10 V 13
GS
5.5
6
18 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Rise Time
Fall Time
f
Cross-over Time
c
V
= 80 V ID = 9 A
DD
R
= 4.7 Ω VGS = 5 V
G
10
10
25
14
14
35
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
9
36
I
SDM
I
SD
Source-drain Current
(•)
Source-drain Current
(pulsed)
V
(∗) Forward On Voltage ISD = 9 A VGS = 0 1.5 V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
I
= 9 A di/dt = 100 A/µs
SD
V
= 25 V Tj = 150 oC
DD
110
0.4
Charge
I
RRM
Reverse Recovery
7.2
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
®
3/6
Page 4
STD9N10L
TO-252 (DPAK) MECHANICAL DATA
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039
4/6
A
C2
L2
E
B2
==
H
DETAIL "A"
D
==
C
B
2
1 3
L4
A1
G
==
A2
DETAIL "A"
0068772-B
®
Page 5
TO-251 (IPAK) MECHANI CAL DAT A
STD9N10L
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
H
C
A
C2
E
B2
= =
L2
= =
A1
B6
L
B
D
B3
2
1 3
L1
A3
B5
G
= =
0068771-E
®
5/6
Page 6
STD9N10L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any in fringe ment o f patents or other rig hts of third par ties wh ich may result from its u se. N o li cen se is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized f or use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectro nics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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6/6
®
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