Datasheet STD9N10 Datasheet (SGS Thomson Microelectronics)

STD9N10

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE V

DSS

R

DS(on)

I

D

STD9N10 100 V < 0.27 Ω 9A

■ TYPICALR

■ AVALANCHERUGGEDTECHNOLOGY

■ 100% AVALANCHETESTED

■ REPETITIVEAVALANCHEDATAAT 100

■ LOW GATE CHARGE

■ HIGH CURRENTCAPABILITY

o

■ 175

■ APPLICATIONORIENTED

COPERATINGTEMPERATURE

DS(on)

=0.23 Ω

o

C

CHARACTERIZATION

■ THROUGH-HOLE IPAK (TO-251) POWER

PACKAGEIN TUBE(SUFFIX ”-1”)

■ SURFACE-MOUNTINGDPAK (TO-252)

POWERPACKAGE IN TAPE & REEL
(SUFFIX”T4”)

APPLICATIONS

■ HIGH CURRENT, HIGH SPEEDSWITCHING

■ SOLENOIDANDRELAY DRIVERS

■ REGULATORS

■ DC-DC& DC-AC CONVERTERS

■ MOTORCONTROL,AUDIO AMPLIFIERS

■ AUTOMOTIVEENVIRONMENT (INJECTION,

ABS, AIR-BAG,LAMPDRIVERS,Etc.)

3

2

IPAK

TO-251

(Suffix”-1”)

1

(Suffix ”T4”)

1

DPAK

TO-252

INTERNAL SCHEMATIC DIAGRAM

3

ABSOLUTE MAXIMUM RATINGS

Symb o l Parame t er Val u e Uni t

V

V

DGR

V

I

DM

P

T

(•) Pulse width limitedby safe operating area

March 1996

Drain-source Voltage (VGS= 0) 100 V

DS

Drain- gate Voltage (RGS=20kΩ) 100 V
Gate-source Voltage ± 20 V

GS

I

Drain Current (c ont inuo us) a t Tc=25oC9A

D

I

Drain Current (c ont inuo us) a t Tc=100oC6A

D

(•) Drain Current (puls ed) 36 A

Total Dissipat i on at Tc=25oC45W

tot

Derat ing Factor 0.3 W/
Stora ge Temperature -65 to 175

stg

T

Max. Operat ing Junction T emperatur e 175

j

o
o

o

C
C
C

1/10

STD9N10

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sin k

T

AVALANCHE CHARACTERISTICS

Symb o l Para met er Max V alue Uni t

I

AR

E

E

I

AR

Ther mal Resistance Junct ion-case Max
Ther mal Resistance Junct ion-ambient Max
Ther mal Resistance Case-s i nk Typ
Maximum Lead Tempera t ure For Solder ing Purpo se

l

Avalanche Current , Repet it iv e or Not-Repe t it ive
(pulse width limit ed by T

Single Pu lse Avalanc he E nerg y

AS

(starti ng T
Repetitive Avalanche E n er gy

AR

=25oC, ID=IAR,VDD=25V)

j

(pulse width limit ed by T

max, δ <1%)

j

max, δ <1%)

j

Avalanche Current , Repet it iv e or Not-Repe t it ive

=100oC, pulse wid t h limited by Tjmax, δ <1%)

(T

c

3.33
100

1.5

275

9A

30 mJ

7mJ

6A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID= 250 µAVGS= 0 100 V

Break dow n Voltage

I

I

DSS

GSS

Zero Gate Voltage
Drain Current (V

GS

Gat e- bod y Leaka ge
Current (V

DS

=0)

=0)

=MaxRating

V

DS

V

=MaxRatingx0.8 Tc= 125oC

DS

V

= ± 20 V ± 100 nA

GS

250

1000µAµA

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th )

R

DS(on)

I

D(on)

Gat e Thres hold Volt age VDS=VGSID=250µA234V
St at ic Drain-source On

Resistance

VGS= 10V ID=4.5A

= 10V ID=4.5A Tc=100oC

V

GS

On S t ate Drain Current VDS>I

D(on)xRDS(on)max

0.23 0.27

0.54

9A

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on ductance

C

C

C

Input Capac it an ce

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on)maxID

=4.5A 2 4 S

VDS=25V f=1MHz VGS= 0 330

90
25

450
120

40

Ω
Ω

pF
pF
pF

2/10

STD9N10

ELECTRICAL CHARACTERISTICS (continued)

SWITCHINGON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Time
Rise Time

VDD=50V ID=4.5A

=4.7 Ω VGS=10V

R

G

(see t est circuit, figure 3)

(di/dt)

Tur n-on C urr ent Slope VDD=80V ID=9A

on

R

=4.7 Ω VGS=10V

G

(see t est circuit, figure 5)

Q

Q

Q

Tot al Gat e Charge

g

Gate-Source Charge

gs

Gat e- Drain Charge

gd

VDD=80V ID=9A VGS=10V 15

SWITCHINGOFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage R ise T ime

t

Fall T ime

f

Cross-over Time

c

VDD=80V ID=9A

=4.7 Ω VGS=10V

R

G

(see t est circuit, figure 5)

SOURCE DRAIN DIODE

10
40

15
60

440 A / µ s

25 nC
6
5

15
25
50

25

35

70

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

9

36

(pulsed)

(∗)ForwardOnVoltage ISD=9A VGS=0 1.5 V

V

SD

t

Q

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 9 A di/ dt = 100 A/µs

=20V Tj= 150oC

V

DD

(see t est circuit, figure 5)

80

0.2

Charge

I

RRM

Reverse Recovery

5

Current

(∗) Pulsed: Pulse duration =300 µs, duty cycle 1.5 %
(•) Pulse width limited by safeoperating area

Safe Operating Area ThermalImpedance

A
A

ns

µC

A

3/10

STD9N10

Derating Curve

TransferCharacteristics

OutputCharacteristics

Transconductance

StaticDrain-source On Resistance

4/10

Gate Charge vs Gate-sourceVoltage

STD9N10

CapacitanceVariations

Normalized OnResistance vs Temperature

Normalized GateThreshold Voltagevs
Temperature

Turn-onCurrent Slope

Turn-offDrain-source VoltageSlope

Cross-overTime

5/10

STD9N10

SwitchingSafe Operating Area

Source-drainDiode Forward Characteristics

AccidentalOverload Area

Fig. 1: UnclampedInductive Load Test Circuit

6/10

Fig. 2: UnclampedInductiveWaveform

STD9N10

Fig. 3: SwitchingTimes Test Circuits For

ResistiveLoad

Fig. 5: Test Circuit For InductiveLoad Switching
And DIodeRecovery Times

Fig. 4: GateCharge test Circuit

7/10

STD9N10

TO-251 (IPAK) MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370

L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

8/10

A

E

==

C2

L2

B2

==

H

C

A3

A1

B6

L

B

B5

G

==

D

B3

2

13

L1

0068771-E

TO-252 (DPAK) MECHANICALDATA

STD9N10

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397

L2 0.8 0.031
L4 0.6 1 0.023 0.039

H

A

E

==

C2

L2

B2

==

DETAIL”A”

D

2

13

L4

A1

C

A2

DETAIL”A”

B

G

==

0068772-B

9/10

STD9N10

Information furnished is believedto be accurate and reliable. However, SGS-THOMSONMicroelectronics assumes no responsability for the
consequencesof use ofsuch information nor for any infringement of patents or otherrights of third parties which may resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patentor patentrights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publicationare subjectto change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSONMicroelectronics productsarenotauthorized for useas critical components in lifesupportdevicesor systems withoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.

 1995 SGS-THOMSONMicroelectronics - All Rights Reserved

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