Datasheet STD8N06 Datasheet (SGS Thomson Microelectronics)

STD8N06

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE V

DSS

R

DS(on)

I

D

STD8N06 60 V < 0.25 Ω 8A

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

o

■ 175

■ APPLICATION ORIENTED

C OPERATING TEMPERATURE

DS(on)

= 0.21 Ω

o

C

CHARACTERIZATION

■ THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)

■ SURFACE-MOUNTINGDPAK (TO-252)

POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ REGULATORS

■ DC-DC & DC-AC CONVERTERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

3

2

1

IPAK

TO-251

(Suffix ”-1”)

INTERNAL SCHEMATIC DIAGRAM

1

DPAK

TO-252

(Suffix ”T4”)

3

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

V

V

V

I

DM

P

T

(•) Pulsewidth limited bysafe operating area

December 1996

Drain - s ource Voltage (VGS=0) 60 V

DS

Drain- gate Voltage (RGS=20kΩ)60V

DGR

Gate-source Voltage ± 20 V

GS

Drain Current (continuous) at Tc=25oC8A

I

D

Drain Current (continuous) at Tc=100oC5.6A

I

D

(•) Drain Current (pulsed) 32 A

Total Di ssipation at Tc=25oC35W

tot

Derat ing Factor 0.23 W/
St or a ge Tem perature -65 to 175

stg

Max. Operating Junction Temperature 175

T

j

o
o

o

C
C
C

1/10

STD8N06

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

E

E

I

AR

Thermal Resistance Junction - cas e Max
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum L ead Temperat ur e For Soldering Purpos e

l

Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng Tj=25oC, ID=IAR,VDD=25V)
Repetitive Avalanc he Energ y

AR

(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive

(Tc= 100oC, pulse width limited by Tjmax, δ <1%)

4.3

100

1.5

275

8A

40 mJ

10 mJ

5.6 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

(BR)DSS

Drain - s ource

ID=250µAVGS=0 60 V

Break d own Volta ge

I

DSS

I

GSS

Zer o Gate Volt age
Drain Current (V

GS

Gat e- body Leak age

=0)

=MaxRating

V

DS

V

= Max Rating x 0 .8 Tc=125oC

DS

1

10

VGS= ± 20 V ± 100 nA

Current (VDS=0)

ON (∗)

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID=250µA234V
St at ic Drain-s our ce O n

VGS=10V ID=4A 0.21 0.25 Ω

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

8A

VGS=10V

DYNAMIC

Symbol Parameter Test Condition s Min. Typ. Max. Unit

(∗)Forward

g

fs

Tr ansconductance

C
C
C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=4A 1 3 S

VDS=25V f=1MHz VGS=0 260

90
30

340
120

40

µA
µA

pF
pF
pF

2/10

STD8N06

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on T im e

t

Rise Time

r

Turn-on C urrent S lope VDD=48V ID=8A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage R ise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAIN DIODE

VDD=30V ID=4A
RG=47 Ω VGS=10V

14
75

(see test circuit, figure 3)

240 A/µs
RG=47 Ω VGS=10V
(see test circuit, figure 5)

VDD=48V ID=8A VGS=10V 13

7
4

VDD=48V ID=8A
RG=47 Ω VGS=10V
(see test circuit, figure 5)

16
22
45

20

100

20 nC

25
30
60

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Condition s Min. Typ. Max. Unit

I

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

8

32

(pulsed)

V

(∗) F or ward O n Voltage ISD=8A VGS=0 1.5 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD=8A di/dt=100A/µs
VDD=25V Tj=150oC
(see test circuit, figure 5)

70

0.18

Charge

I

RRM

Reverse Recovery

5

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Area Thermal Impedance

A
A

ns

µC

A

3/10

STD8N06

Derating Curve

Transfer Characteristics

Output Characteristics

Transconductance

Static Drain-source On Resistance

4/10

Gate Charge vs Gate-source Voltage

Capacitance Variations Normalized Gate Threshold Voltage vs

Temperature

Normalized On Resistance vs Temperature Turn-on Current Slope

STD8N06

Cross-over TimeTurn-off Drain-source Voltage Slope

5/10

STD8N06

Switching SafeOperating Area Accidental Overload Area

Source-drain Diode Forward Characteristics

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms

6/10

STD8N06

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge Test Circuit

7/10

STD8N06

TO-251 (IPAK) MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

8/10

A

E

==

C2

L2

B2

==

H

C

A3

A1

B6

L

B

B5

G

==

D

B3

2

13

L1

0068771-E

TO-252 (DPAK) MECHANICAL DATA

STD8N06

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023

C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039

H

A

E

==

C2

L2

B2

==

DETAIL”A”

D

2

13

L4

A1

C

A2

DETAIL”A”

B

G

==

0068772-B

9/10

STD8N06

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such informationnor for any infringement of patents or other rights of third parties which mayresults fromits use. No
licenseis granted by implication orotherwise under any patentor patentrights of SGS-THOMSONMicroelectronics. Specifications mentioned
in thispublication are subject to change withoutnotice. Thispublication supersedes andreplacesall informationpreviously supplied.
SGS-THOMSONMicroelectronicsproducts are notauthorized for use ascriticalcomponents in lifesupportdevices or systems withoutexpress
writtenapproval of SGS-THOMSON Microelectonics.

 1996 SGS-THOMSON Microelectronics -Printed in Italy- AllRightsReserved

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Singapore- Spain - Sweden - Switzerland-Taiwan - Thailand- UnitedKingdom - U.S.A

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