Datasheet STD7NS20-1 Datasheet (SGS Thomson Microelectronics)

STD7NS20

STD7NS20-1

N-CHANNEL 200V - 0.35Ω - 7A DPAK / IPAK

MESH O VERL AY™ MOSFET

PRELIMINARY DATA

TYPE V

STD7NS20
STD7NS20-1

■ TYPICAL R

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AV ALANCHE TESTED

■ VERY LOW INTRINSIC CAPACITANCES

■ ADD SUFFIX “T4” FOR ORDERING IN TAPE &

DS

DSS

200 V
200 V

(on) = 0.35 Ω

R

DS(on)

< 0.40 Ω
< 0.40 Ω

I

D

7A
7A

REEL

DESCRIPTION

Using the l ate st high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad­vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou­pled with the Company’s proprietary edge termina­tion s t ruc ture, makes it suitable in c ov erte rs for
lighting applications.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITH MODE POWER SUPPLIES (SMPS)

■ DC-DC CONVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT

3

1

DPAK

TO-252

IPAK

TO-251

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt (1) Peak Diode Recovery voltage slope 5 V/ns

T

stg

T

j

(•)Pulse width limited by safe operating area

June 2003

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

200 V

200 V
Gate- source Voltage ± 20 V
Drain Current (continuos) at TC= 25°C
Drain Current (continuos) at TC= 100°C

()

Drain Current (pulsed) 28 A
Total Dissipation at TC= 25°C

7A

4.4 A

45 W

Derating Factor 0.37 W/°C

Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

(1) ISD≤ 7A, di/dt≤300 A/µs, VDD≤ V

(BR)DSS

,Tj≤T

jMAX

1/8

STD7NS20 / STD7NS20-1

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 2.7 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 275 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source

= 25 °C, ID=IAR,VDD=50V)

j

ID= 250 µA, VGS= 0 200 V

7A

60 mJ

Breakdown Voltage

= Max Rating

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

=0)

=0)

V

DS

= Max Rating, TC= 125 °C

V

DS

V

= ±20V ±100 nA

GS

1µA

10 µA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

V

DS=VGS,ID

VGS=10V,ID= 3.5 A

= 250µA

234V

0.35 0.40 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS>I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 90 pF
Reverse Transfer

Capacitance

D(on)xRDS(on)max,

ID= 3.5 A

V

=25V,f=1MHz,VGS=0

DS

4S

540 pF

35 pF

2/8

STD7NS20 / STD7NS20-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time 15 ns
Total Gate Charge

Gate-Source Charge 7.5 nC
Gate-Drain Charge 9 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t
t

f

c

Off-voltage Rise Time
Fall Time
Cross-over Time

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Source-drain Current 7 A

(2)

Source-drain Current (pulsed) 28 A

(1)

Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 0.95 µC
Reverse Recovery Current 11 A

=100V,ID= 3.5 A

DD

R

= 4.7Ω VGS=10V

G

(see test circuit, Figure 3)
V

=160V,ID=18A,

DD

=10V

V

GS

V

= 160 V, ID=7A,

clamp

RG=4.7Ω, VGS= 10V
(see test circuit, Figure 5)

ISD= 7 A, VGS=0
I

= 7 A, di/dt = 100A/µs

SD

VDD=50V,Tj= 150°C
(see test circuit, Figure 5)

10 ns

31 45 nC

12
12
25

1.5 V

170 ns

ns
ns
ns

3/8

STD7NS20 / STD7NS20-1

Fig. 2: Unclamped Inductive W av eformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

4/8

TO-252 (DPAK) MECHANICAL DATA

STD7NS20 / STD7NS20-1

DIM.

A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0

MIN. TYP. MAX. MIN. TYP. MAX.

o

mm inch

o

8

o

0

o

0

P032P_B

5/8

STD7NS20 / STD7NS20-1

TO-251 (IPAK) MECHANI CAL DAT A

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

H

6/8

A

C2

L2

E

B2

= =

= =

D

B3

2

1 3

L1

A1

L

B6

C

A3

B

B5

G

= =

0068771-E

STD7NS20 / STD7NS20-1

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

All dimensions

areinmillimeters

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 6.8 7 0. 267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476

D 1.5 1.6 0. 059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

* on sales type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

2500 2500

7/8

STD7NS20 / STD7NS20-1

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.

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