Datasheet STD7NB20-1 Datasheet (SGS Thomson Microelectronics)

STD7NB20

STD7NB20-1

N-CHANNEL 200V - 0.3Ω - 7A DPAK/IPAK

PowerMESH™ MOSFET

TYPE V

STD7NB20
STD7NB20-1

■ TYPICAL R

■ EXTREMELY HIGH dv /d t C APABILITY

■ 100% AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPAC ITANCES

■ GATE CHARGE MINIMIZED

■ ADD SUFFIX “T4” FOR ORDERING IN TAPE &

DS

DSS

200 V
200 V

(on) = 0.3 Ω

R

DS(on)

< 0.40 Ω
< 0.40 Ω

I

D

7 A
7 A

REEL

DESCRIPTION

Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad­vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi­nation structure, gives the lowest R

DS(on)

per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris­tics.

APPLICATIONS

■ SWITH MODE POWER SUPPLI ES ( SMPS)

■ DC-DC CONVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT

3

1

DPAK

TO-252

IPAK

TO-251

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt (1) Peak Diode Recovery voltage slope 5.5 V/ns

T

stg

T

j

(•)Pu l se width limited by safe operating area

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 30 V

Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C

(l)

Drain Current (pulsed) 28 A
Total Dissipation at TC = 25°C
Derating Factor 0.44 W/°C

Storage Temperature – 65 to 150 °C
Max. Operating Junction Temperature 150 °C

(1) ISD≤ 7A, di/dt≤200 A/µs, VDD≤ V

200 V
200 V

7A
5A

55 W

, Tj≤ T

(BR)DSS

jMAX

1/10July 2002

STD7NB20 / STD7NB20-1

THERMA L D ATA

Rthj-case Thermal Resistance Junction-case Max 2.27 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 275 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source

= 25 °C, ID = IAR, VDD = 50 V)

j

ID = 250 µA, VGS = 0 200 V

7A

100 mJ

Breakdown Voltage
Zero Gate Voltage

Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

V

= Max Rating

DS

V

= Max Rating, TC = 125 °C

DS

V

= ± 30V ±100 nA

GS

1µA

10 µA

ON

(1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

V

= VGS, ID = 250µA

DS

VGS = 10V, ID = 3.5 A

345V

0.30 0.40 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS > I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 135 190 pF
Reverse Transfer

Capacitance

I

D

V

DS

= 3.5 A

D(on)

x R

DS(on)max,

= 25V, f = 1 MHz, VGS = 0

23 S

470 650 pF

22 30 pF

2/10

STD7NB20 / STD7NB20-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time 15 20 ns
Total Gate Charge

Gate-Source Charge 7.5 nC
Gate-Drain Charge 5.5 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t
t

f

c

Off-Voltage Rise Time
Fall Time
Cross-over Time

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.

2. Pulse width li mited by safe operating ar ea.

Source-drain Current 7 A

(2)

Source-drain Current (pulsed) 28 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge 980 nC
Reverse Recovery Current 11.5 A

= 100 V, ID = 5 A

DD

RG= 4.7Ω VGS = 10 V
(see test circuit, Figure 3)

V

= 160V, ID = 10 A,

DD

VGS = 10V

= 160V, ID = 10 A,

V

DD

RG=4.7Ω, V

GS

= 10V

(see test circuit, Figure 3)

ISD = 7 A, VGS = 0
I

= 10 A, di/dt = 100A/µs

SD

VDD = 50V, Tj = 150°C
(see test circuit, Figure 5)

10 14 ns

17 24 nC

8
10
20

11
14
28

1.5 V

170 ns

ns
ns
ns

Safe Operating Area

Thermal Impedance

3/10

STD7NB20 / STD7NB20-1

Output Characteristics

Transconductance Static Drain-source On Resistance

Transfer Characteristics

Gate Charge vs Gate-source Voltage

4/10

Capacitance Variations

STD7NB20 / STD7NB20-1

Normalized Gate Threshold Volta ge vs Temp.

Source-drain Diode Forward Characteristics

Normalized On Resistance vs Temperatur e

5/10

STD7NB20 / STD7NB20-1

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/10

STD7NB20 / STD7NB20-1

2

D

PAK MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm. inch

M 2.4 3.2 0.094 0.126
R 0.4 0.015

V2 0º8º

3

7/10

1

STD7NB20 / STD7NB20-1

TO-251 (IPAK) MECHANICAL DAT A

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

H

C

A

8/10

C2

E

= =

L2

B2

= =

D

B3

2

1 3

L1

A1

L

B6

A3

B

B5

G

= =

0068771-E

STD7NB20 / STD7NB20-1

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

All dimensions

are in millimeters

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0 .059
C 12.8 13.2 0.504 0.520

D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968

T 22.4 0.881

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

* on sales type

9/10

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

2500 2500

STD7NB20 / STD7NB20-1

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for t he
consequences of use of su ch in formation nor for any in fringement of patents or other rights of third parties w hich may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously suppli ed. STMi croelect ronics pr oducts are not author ized for use as cr itical component s in li fe suppo rt devi ces or
systems without express written approval of STMicroelectronics.

Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco

© The ST logo is a registered trademark of STMicroelectronics

© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved

Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.

STMicroelectronics GROUP OF COMPANIES

© http://www.st.com

10/10