STD60NF55L
N-CHANNEL 55V - 0.012Ω - 60A DPAK
STripFET™ II POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
STD60NF55L 55V < 0.015Ω 60A
■ TYPICAL R
■ LOW THRESHOLD DRIVE
■ ADD SUFFIX “T4” FOR ORDERING IN TAPE &
DS(on)
= 0.012Ω
REEL
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature
Size
™” strip-based process. The re sulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility..
APPLICATIONS
■ AUTOMOTIVE
■ MOTOR CONTROL
3
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 16 V/ns
(2)
E
AS
T
stg
T
j
(●) Pulse width limited by safe operating area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
55 V
55 V
Gate- source Voltage ± 15 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
(l)
Drain Current (pulsed) 240 A
Total Dissipation at TC = 25°C
60 A
42 A
110 W
Derating Factor 0.73 W/°C
Single Pulse Avalanche Energy 400 mJ
Storage Temperature
Operating Junction Temperature
(1)ISD ≤40A, di/dt ≤350A/µs, VDD ≤ V
(2) Start i ng Tj=25°C, ID=30A, VDD=20V
– 55 to 175 °C
, Tj ≤ T
(BR)DSS
JMAX.
1/9April 2002
STD60NF55L
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 1.36 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Maximum Lead Temperature For Soldering Purpose 275 °C
Drain-source
ID = 250 µA, VGS = 0 55 V
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 15 V ±100 nA
GS
V
= VGS, ID = 250µA
DS
VGS = 10 V, ID = 30 A
VGS = 5 V, ID = 30 A
12V
0.012 0.015 Ω
0.014 0.017 Ω
1µA
10 µA
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS = 10 V, ID= 30 A 35 S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 390 pF
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, VGS = 0
DS
1950 pF
130 pF
2/9
STD60NF55L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 180 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c yc l e 1.5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current 60 A
(2)
Source-drain Current (pulsed) 240 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 25 V, ID = 30 A
DD
RG= 4.7Ω VGS = 4.5V
(see test circuit, Figure 3)
= 40 V, ID = 60 A,
V
DD
VGS = 5 V
VDD = 25 V, ID = 30 A,
RG=4.7Ω, V
GS
= 4.5V
(see test circuit, Figure 3)
ISD = 60A, VGS = 0
= 40 A, di/dt = 100 A/µs,
I
SD
VDD = 25 V, Tj = 150 °C
(see test circuit, Figure 5)
30 ns
40
10
20
80
35
1.3 V
65
130
4
nC
nC
nC
ns
ns
ns
nC
A
Thermal ImpedanceSafe Operating Area
3/9
STD60NF55L
Output Characteristics Transfer Characteristics
Transconductanc e
Gate Charge vs Gate-source Voltage Capacitance Variations
Static Drain-source On Resistance
4/9
Source-drain Diode Forward Characteristics
STD60NF55L
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
5/9
STD60NF55L
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
6/9
TO-252 (DPAK) MECHANICAL DATA
STD60NF55L
DIM.
A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0
MIN. TYP. MAX. MIN. TYP. MAX.
o
mm inch
o
8
o
0
o
0
P032P_B
7/9
STD60NF55L
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
* on sales type
8/9
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
2500 2500
STD60NF55L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of su ch in formation nor for any in fringement of paten ts or o ther rights of third parties w hich may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously suppli ed. STMi croelect ronics pr oducts are not author ized for use as c ritical component s in li fe suppo rt devi ces or
systems without express written approval of STMicroelectronics.
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