Datasheet STD60NF06 Datasheet (SGS Thomson Microelectronics)

1/9October 2002

STD60NF06

N-CHANNEL 60V - 0.014Ω - 60A DPAK

STripFET™ II POWER MOSFET

(1) ISD≤ 60A, di/ dt ≤ 200 A/µs, VDD≤ 24V, Tj≤T

jMAX

■ TYPICAL R

DS

(on) = 0.014Ω

■ EXCEPTIONAL dv/dt CAPABILI TY

■ 100% AVALANCHE TESTED

■ APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power Mosfet series realized with STMicro­electronics unique STripFET process has specifical­ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated D C-DC
converters for T el ecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.

APPLICATIONS

■ HIGH-EFFICIENCY DC-DC CONVERTERS

■ UPS AND MOTOR CONTROL

■ AUTOMOTIVE

ABSOLUTE MAXIMUM RATINGS

(●) Pulse width limited by safe operating area

TYPE V

DSS

R

DS(on)

I

D

STD60NF06 60 V < 0.016 Ω 60A

Symbol Parameter Value Unit

V

DS

Drain-source Voltage (VGS = 0)

60 V

V

DGR

Drain-gate Voltage (RGS = 20 kΩ)

60 V

V

GS

Gate- source Voltage ± 20 V

I

D

Drain Current (continuous) at TC = 25°C

60 A

I

D

Drain Current (continuous) at TC = 100°C

42 A

I

DM

(l)

Drain Current (pulsed) 240 A

P

TOT

Total Dissipation at TC = 25°C

110 W

Derating Factor 0.73 W/°C

dv/dt (1) Peak Diode Recovery voltage slope 4 V/ns

T

stg

Storage Temperature

– 55 to 175 °C

T

j

Operating Junction Temperature

DPAK

1

3

(Suffix “T4”)

INTERNAL SCHEMATIC DIAGRAM

STD60NF06

2/9

THERMA L D ATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (T

CASE

= 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON

(1)

DYNAMIC

Rthj-case Thermal Resistance Junction-case Max 1.36 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose 275 °C

Symbol Parameter Max Value Unit

I

AR

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

j

max)

30 A

E

AS

Single Pulse Avalanche Energy
(starting T

j

= 25 °C, ID = IAR, VDD = 30 V)

350 mJ

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source
Breakdown Voltage

ID = 250 µA, VGS = 0 60 V

I

DSS

Zero Gate Voltage
Drain Current (V

GS

= 0)

V

DS

= Max Rating

1µA

VDS = Max Rating, TC = 125 °C

10 µA

I

GSS

Gate-body Leakage
Current (V

DS

= 0)

V

GS

= ± 20V ±100 nA

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold Voltage

V

DS

= VGS, ID = 250 µA

24V

R

DS(on)

Static Drain-source On
Resistance

VGS = 10 V, ID = 30 A

0.014 0.016 Ω

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

fs

(1) Forward Transconductance VDS =15 V , ID= 30 A 20 S

C

iss

Input Capacitance

V

DS

= 25 V, f = 1 MHz, VGS = 0

1810 pF

C

oss

Output Capacitance 360 pF

C

rss

Reverse Transfer
Capacitance

125 pF

3/9

STD60NF06

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pu l se duration = 300 µs, duty c ycle 1.5 %.

2. Pulse width li mited by safe operating area.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Turn-on Delay Time

V

DD

= 30 V, ID = 30 A

R

G

= 4.7Ω , VGS = 10 V

(see test circuit, Figure 3)

16 ns

t

r

Rise Time 108 ns

Q

g

Total Gate Charge VDD = 48 V, ID =60 A

VGS = 10 V

49 66 nC

Q

gs

Gate-Source Charge 18 nC

Q

gd

Gate-Drain Charge 14 nC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

f

Turn-off-Delay Time
Fall Time

VDD = 30 V, ID = 30 A,
RG=4.7Ω, V

GS

= 10 V

(see test circuit, Figure 3)

43
20

ns
ns

t

d(off)

t

f

t

c

Off-voltage Rise Time
Fall Time
Cross-over Time

Vclamp =48 V, ID = 60 A
R

G

=4.7Ω, V

GS

= 10 V

(see test circuit, Figure 3)

40
12
21

ns
ns
ns

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

Source-drain Current 60 A

I

SDM

(2)

Source-drain Current (pulsed) 240 A

VSD (1)

Forward On Voltage

ISD = 60 A, VGS = 0

1.3 V

t

rr

Q

rr

I

RRM

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

I

SD

= 60 A, di/dt = 100A/µs,

V

DD

= 25V, Tj = 150°C

(see test circuit, Figure 5)

73

182

5

ns

nC

A

STD60NF06

4/9

Safe Operating Area for DPAK

Static Drain-source On Resistance

Thermal Impedence for DPAK

Transconductance

Transfer Characteristics

Output Characteristics

5/9

STD60NF06

Normalized Gate Threshold Voltage vs
Temperature

Source-drain Diode Forw ard Ch aracteristi cs

Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized On Resistance vs Temperatur e

STD60NF06

6/9

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

7/9

STD60NF06

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0

o

8

o

0

o

0

o

P032P_B

TO-252 (DPAK) MECHANICAL DATA

STD60NF06

8/9

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

DPAK FOOTPRINT

* on sales type

DIM.

mm inch

MIN. MAX. MIN. MAX.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520

D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968

T 22.4 0.881

BASE QTY BULK QTY

2500 2500

REEL MECHANICAL DATA

DIM.

mm inch

MIN. MAX. MIN. MAX.

A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

TAPE MECHANICAL DATA

All dimensions

are in millimeters

All dimensions are in millimeters

9/9

STD60NF06

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