Page 1
STP8NM60, STP8NM60FP
STD5NM60, STD5NM60-1
N-CHANNEL 600V - 0.9Ω - 8A TO-220/TO-220FP/DPAK/IPAK
MDmesh™ Power MOSF ET
TYPE V
STP8NM60
STP8NM60FP
STD5NM60
STD5NM60-1
■ TYPICAL R
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
600 V
600 V
600 V
600 V
(on) = 0.9Ω
DS
DSS
R
DS(on)
<1Ω
<1Ω
<1Ω
<1Ω
I
D
8A
8A(*)
5A
5A
Pw
100 W
30 W
96 W
96 W
CHARGE
■ LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates t he Multiple Drain process with the Company’s PowerMESH™ horizontal
layout. Theresulting produc t has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche c harac teristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic perfo rmance that issignificantly better than
that of similar completition’s products.
TO-220
3
1
DPAK
TO-252
TO-220FP
IPAK
TO-251
INTERNAL SCHEMATIC DIAGRAM
3
2
1
3
2
1
APPLICATIONS
The MDmesh™ family is very suitable for increase
the power density of high voltage con verters allowing system miniaturization and higher efficiencies.
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP8NM60 P8NM60 TO-220 TUBE
STP8NM60FP P8NM60FP TO-220FP TUBE
STD5NM60T4 D5NM60 DPAK TAPE & REEL
STD5NM60-1 D5NM60 IPAK TUBE
1/13August 2003
Page 2
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP8NM60 STP8NM60FP
I
V
DM
P
V
DGR
V
I
I
TOT
DS
GS
D
D
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
600 V
600 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 32 32 (*) 20 A
Total Dissipation at TC= 25°C
8 8 (*) 5 A
5 5 (*) 3.1 A
100 30 96 W
Derating Factor 0.8 0.24 0.4 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 15 15 15 V/ns
V
ISO
T
j
T
stg
() Pulse width limited by safe operating area
≤5A, di/dt ≤400A/µs, VDD≤ V
(1) I
SD
(*) Limited only by maximum temperature allowed
Insulation Withstand Voltage (DC) - 2500 - V
Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj≤TJMAX.
-55 to 150
-55 to 150
THERMAL DATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.25 4.16 1.3 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
STD5NM60
STD5NM60-1
DPAK
IPAK
°C
°C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID=IAR,VDD=50V)
j
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SP ECIFIED)
CASE
2.5 A
200 mJ
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
V
R
2/13
I
DSS
I
GSS
GS(th)
DS(on)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
Resistance
ID= 250 µA, VGS= 0 600 V
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ± 30V ±100 nA
GS
V
DS=VGS,ID
= 250µA
345V
1
10
VGS=10V,ID= 2.5 A 0.9 1 Ω
µA
µA
Page 3
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SP ECIFIED)
CASE
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=I
g
fs
D(on)xRDS(on)max,
2.4 S
ID= 2.5A
C
oss eq.
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(2) Equivalent Output
=25V,f=1MHz,VGS= 0 440
V
DS
100
10
VGS=0V,VDS= 0V to 480V 50 pF
Capacitance
R
G
Gate Input Resistance f=1 MHz Gate DC Bias = 0
4 Ω
Test Signal Level = 20mV
Open Drain
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
t
r
Rise Time
VDD=300V,ID= 2.5 A
RG= 4.7Ω VGS=10V
14
10
(Resistive Load see, Figure 3)
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
=400V,ID=5A,
V
DD
=10V
V
GS
13
18
5
6
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
r(Voff)
Turn-off Delay Time
t
f
Fall Time
VDD= 300 V, ID= 2.5 A
=4.7ΩVGS=10V
R
G
(Resistive Load see, Figure 3)
= 480V, ID=5A,
t
f
t
c
Fall Time
Cross-over Time
Off-voltage Rise Time
V
DD
RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)
23
10
7
10
17
pF
pF
pF
ns
ns
nC
nC
nC
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe o perating area.
Source-drain Current
(2)
Source-drain Current (pulsed)
(1)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD= 5 A, VGS=0
I
SD
V
DD
(see test circuit, Figure 5)
I
SD
V
DD
(see test circuit, Figure 5)
= 5 A, di/dt = 100A/µs
=100V,Tj=25°C
= 5 A, di/dt = 100A/µs
=100V,Tj=150°C
300
1950
13
445
3005
13.5
8
32
1.5 V
A
A
ns
µC
A
ns
µC
A
3/13
Page 4
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
Safe Operating Area For TO-220
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220
Thermal Impedance For TO-220FP
Safe Operating Area For DPAK/IPAK
4/13
Thermal Impedance F or DPAK/IPAK
Page 5
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
Transfer CharacteristicsOutput Characteristics
Transconductance
Gate Charge vs Gate-so urce Voltage
Static Drain-source On Resistance
Capacitance Variations
5/13
Page 6
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
Normalized On Resistance vs Tem peratureNormalized Gate Theresho ld Voltage vs Temp.
Source-drain Diode Forward Ch aracteristics
6/13
Page 7
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
Fig. 2: Unclamped Induct ive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Induc t ive Load Switching
And Diode Recovery T imes
Fig. 4: Gate Charge tes t Circuit
7/13
Page 8
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
8/13
Page 9
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
TO-220FP MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
E
A
D
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L5
L4
9/13
Page 10
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
P032P_B
TO-252 (DPAK) MECHANICAL DATA
DIM.
A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0
MIN. TYP. MAX. MIN. TYP. MAX.
o
mm inch
o
8
o
0
o
0
10/13
Page 11
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
0068771-E
TO-251 (IPAK) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
H
C
A
C2
E
= =
L2
B2
= =
D
B3
2
1 3
L1
A1
L
B6
A3
B
B5
G
= =
11/13
Page 12
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
DPAK FOOTPRINT
All dimensions are in m illimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
* on sales ty pe
12/13
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BU LK QTY
2500 2500
Page 13
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
STMicroelectronics GROUP OF COMPANIES
© http://www.st.com
13/13
Loading...