Datasheet STP4NK80ZFP, STP4NK80Z, STD4NK80Z, STD4NK80Z-1 Datasheet (SGS Thomson Microelectronics)

STP4NK80Z - STP4NK80ZFP

STD4NK80Z - STD4NK80Z-1

N-CHANNEL 800V - 3Ω - 3A TO-220/TO-220FP/DPAK/IPAK

Zener-Protected SuperMESH™ Power MOSFET

TYPE V

STP4NK80Z
STP4NK80ZFP
STD4NK80Z
STD4NK80Z-1

■ TYPICAL R

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GAT E CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VER Y GO OD MANUFACTURING

800 V
800 V
800 V
800 V

(on) = 3 Ω

DS

DSS

R

DS(on)

< 3.5 Ω
< 3.5 Ω
< 3.5 Ω
< 3.5 Ω

I

D

3A
3A
3A
3A

Pw

80 W
25 W
80 W
80 W

REPEATIBILITY

DESCRIPTION

The SuperME SH™ series is obtained through an
extreme optimization of S T’s well established strip­based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis tak­en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple­ments ST full range of high voltage MOSFETs in­cluding revolutionary MDm es h™ products.

3

2

TO-220

DPAK

1

TO-220FP

3

1

IPAK

INTERNAL SCHEMATIC DIAGRAM

3

2

1

3

2

1

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES,

ADAPTORS AND PFC

■ LI GHTING

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP4NK80Z P4NK80Z TO-220 TUBE
STP4NK80ZFP P4NK80ZFP TO-220FP TUBE
STD4NK80ZT4 D4NK80Z DPAK TAPE & REEL

STD4NK80Z-1 D4NK80Z IPAK TUBE

1/13February 2003

STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z -1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP4NK80Z STP4NK80ZFP

I

V

DM

P

V

DGR

V

I
I

TOT

DS

GS

D
D

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

800 V

800 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

()

Drain Current (pulsed) 12 12 (*) 12 A
Total Dissipation at TC= 25°C

3 3 (*) 3 A

1.89 1.89 (*) 1.89 A

80 25 80 W

Derating Factor 0.64 0.21 0.64 W/°C

V

ESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3000 KV

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

V

ISO

T

j

T

stg

() Pulse width limited by safe operating area

≤4A, di/dt ≤200A/µs, VDD≤ V

(1) I

SD

(*) Limited only by maximum temperature allowed

Insulation Withstand Voltage (DC) - 2500 - V
Operating Junction Temperature

Storage Temperature

(BR)DSS,Tj≤TJMAX.

-55to150 °C

STD4NK80Z

STD4NK80Z-1

THERMAL DATA

TO-220 TO-220FP

Rthj-case Thermal Resistance Junction-case Max 1.56 5 1.56 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose

300 °C

DPAK

IPAK

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

E

AS

Single Pulse Avalanche Energy
(starting T

max)

j

= 25 °C, ID=IAR,VDD=50V)

j

3A

190 mJ

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 30 V

Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed t o enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’ s integrity. These integ rated Zener diodes thus avoid the
usage of external components.

2/13

STP4NK80Z - STP4NK 80Z FP - STD4NK80Z - STD4NK80Z-1

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SP ECIFIED)

CASE

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=1mA,VGS= 0 800 V

Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Zero Gate Voltage
Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)
Gate Threshold Voltage
Static Drain-source On

V

= Max Rating

DS

VDS= Max Rating, TC= 125 °C
V

= ± 30V ±10 µA

GS

V

DS=VGS,ID

=50µA

3 3.75 4.5 V

1

50

VGS=10V,ID= 1.5 A 3 3.5 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS=15V,ID= 1.5 A 2.9 S

g

fs

C

oss eq.

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(3) Equivalent Output

=25V,f=1MHz,VGS= 0 575

V

DS

67
13

VGS=0V,VDS= 0V to 400 V 60 pF

Capacitance

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

Turn-on Delay Time

t

r

g
gs
gd

Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

VDD=400V,ID= 1.5 A
RG= 4.7Ω VGS=10V
(Resistive Load see, Figure 3)

=640V,ID=3A,

V

DD

V

=10V

GS

13
12

22.5

4.2

11.3

µA
µA

pF
pF
pF

ns
ns

nC
nC
nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off Delay Time

t

f

Fall Time

VDD= 400 V, ID= 1.5 A
R

=4.7ΩVGS=10V

G

35
32

(Resistive Load see, Figure 3)

t

r(Voff)

t

t

f

c

Fall Time
Cross-over Time

Off-voltage Rise Time

= 640 V, ID=3A,

V

DD

RG=4.7Ω, VGS=10V
(Inductive Load see, Figure 5)

18

7.5
25

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. C

Source-drain Current

(2)

Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

.

V

DSS

ISD= 3 A, VGS=0
I

SD

VDD=80V,Tj= 150°C
(see test circuit, Figure 5)

= 3 A, di/dt = 100 A/µs

400

1520

7.6

when VDSincreases from 0 to 80%

oss

3

12

1.6 V

ns
ns

ns
ns
ns

A
A

ns

nC

A

3/13

STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z -1

Safe Operating Area For TO-220/DPAK/IPAK

Safe Operating Area For TO-220FP

Thermal Impedance F or TO-220/DPAK/IPAK

Thermal Impedance For TO-220FP

Output Characteristics

4/13

Transfer Characteristics

STP4NK80Z - STP4NK 80Z FP - STD4NK80Z - STD4NK80Z-1

Transconductance

Gate Charge vs Gate-so urce Voltage

Static Drain-source On Resistance

Capacitance Variations

Normalized Gate Threshold Voltage vs Temp.

Normalized On Resistance vs Temperature

5/13

STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z -1

Source-drain Diode Forward Characteristics

Maximum Avalanche Energy vs Temperature

Normalized BVDSS vs Temperature

6/13

STP4NK80Z - STP4NK 80Z FP - STD4NK80Z - STD4NK80Z-1

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Induct ive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

7/13

STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z -1

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154

L20 16.40 0.645
L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

8/13

STP4NK80Z - STP4NK 80Z FP - STD4NK80Z - STD4NK80Z-1

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L5

L4

9/13

STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z -1

P032P_B

TO-252 (DPAK) MECHANICAL DATA

DIM.

A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0

MIN. TYP. MAX. MIN. TYP. MAX.

o

mm inch

o

8

o

0

o

0

10/13

STP4NK80Z - STP4NK 80Z FP - STD4NK80Z - STD4NK80Z-1

0068771-E

TO-251 (IPAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

H

C

A

C2

E

= =

L2

B2

= =

D

B3

2

1 3

L1

A1

L

B6

A3

B

B5

G

= =

11/13

STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z -1

DPAK FOOTPRINT

TUBE SHIPMENT (no suffix)*

All dimensions are in millimeters

TAPE AND REEL SHIPMENT (suffix ”T4”)*

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881

All dimensions

areinmillimeters

REEL MECHANICAL DATA

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0. 153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0. 075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

* on sales ty pe

12/13

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

2500 2500

STP4NK80Z - STP4NK 80Z FP - STD4NK80Z - STD4NK80Z-1

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
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