Datasheet STP4NK50ZFP, STP4NK50Z, STD4NK50Z-1, STD4NK50Z Datasheet (SGS Thomson Microelectronics)

STP4NK50Z - STP4NK50ZFP

STD4NK50Z - STD4NK50Z-1

N-CHANNEL 500V - 2.4Ω - 3A TO-220/TO-220FP/DPAK/IPAK

Zener-Protected SuperMESH™Power MOSFET

TYPE V

STP4NK50Z
STP4NK50ZFP
STD4NK50Z
STD4NK50Z-1

■ TYPICAL R

■ EXTREMELY HIGH dv/dtCAPABILITY

■ 100% AVALANCHE TESTED

■ GAT E CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VER Y GOOD MANUFACTURING

500 V
500 V
500 V
500 V

(on) = 2.3 Ω

DS

DSS

R

DS(on)

< 2.7 Ω
< 2.7 Ω
< 2.7 Ω
< 2.7 Ω

I

D

3A
3A
3A
3A

Pw

45 W
20 W
45 W
45 W

REPEATIBILITY

DESCRIPTION

The SuperMESH ™ series is obtained through an
extreme optimi za tio n of ST’s well established strip­based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak­en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple­ments ST full range of high voltage MOSFETs i n­cluding revolutionary MDmesh™ products.

TO-220 TO-220FP

3

1

DPAK

IPAK

INTERNAL SCHEMATIC DIAGRAM

3

2

1

3

2

1

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES,

ADAPTORS AND PFC

■ LI GHTING

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP4NK50Z P4NK50Z TO-220 TUBE
STP4NK50ZFP P4NK50ZFP TO-220FP TUBE
STD4NK50ZT4 D4NK50Z DPAK TAPE & REEL

STD4NK50Z-1 D4NK50Z IPAK TUBE

1/13December 2002

STP4NK50Z - STP4NK50ZFP - S TD4N K 50Z - STD4NK50Z-1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP4NK50Z STP4NK50ZFP

I

V

DM

P

V

DGR

V

I
I

TOT

DS

GS

D
D

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

500 V

500 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

()

Drain Current (pulsed) 12 12 (*) 12 (*) A
Total Dissipation at TC= 25°C

3 3 (*) 3 (*) A

1.9 1.9 (*) 1.9 (*) A

45 20 45 W

Derating Factor 0.36 0.16 0.36 W/°C

V

ESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5KΩ) 2800 V

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

V

ISO

T

j

T

stg

() Pulse width limited by safe operating area

≤3A,di/dt≤200A/µs, VDD≤ V

(1) I

SD

(*) Limited only by maximum temperature allowed

Insulation Withstand Voltage (DC) - 2500 - V
Operating Junction Temperature

Storage Temperature

(BR)DSS,Tj≤TJMAX.

-55to150 °C

STD4NK50Z

STD4NK50Z-1

THERMAL DATA

TO-220 TO-220FP

Rthj-case Thermal Resistance Junction-case (Max) 2.78 6.25 2.78 °C/W

Rthj-amb Thermal Resistance Junction-ambient (Max) 62.5 100 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose

300 °C

DPAK

IPAK

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

E

AS

Single Pulse Avalanche Energy
(starting T

max)

j

= 25 °C, ID=IAR,VDD=50V)

j

3A

120 mJ

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 30 V

Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIOD ES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possibl e voltage transients that may occasionally be
applied from gate to source. In this r es pect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.

2/13

STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=1mA,VGS= 0 500 V

Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Zero Gate Voltage
Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)
Gate Threshold Voltage
Static Drain-source On

V

= Max Rating

DS

VDS= Max Rating, TC= 125 °C
V

= ± 20V ±10 µA

GS

V

DS=VGS,ID

= 50µA

3 3.75 4.5 V

1

50

VGS=10V,ID= 1.5 A 2.3 2.7 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS=15V,ID= 1.5 A 1.5 S

g

fs

C

oss eq.

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(3) Equivalent Output

=25V,f=1MHz,VGS= 0 310

V

DS

49
10

VGS=0V,VDS= 0V to 400V 33 pF

Capacitance

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

Turn-on Delay Time

t

r

g
gs
gd

Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

VDD=250V,ID= 1.5 A
RG= 4.7Ω VGS=10V
(Resistive Load see, Figure 3)

=400V,ID=3A,

V

DD

V

=10V

GS

10

7

12

3
7

µA
µA

pF
pF
pF

ns
ns

nC
nC
nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off Delay Time

t

f

Fall Time

VDD= 250 V, ID= 1.5 A
R

=4.7ΩVGS=10V

G

21
11

(Resistive Load see, Figure 3)

t

r(Voff)

t

= 400V, ID=3A,

t

f

c

Fall Time
Cross-over Time

Off-voltage Rise Time

V

DD

RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)

10
10
17

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. C

Source-drain Current

(2)

Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

.

V

DSS

ISD= 3 A, VGS=0
I

SD

VDD=40V,Tj= 150°C
(see test circuit, Figure 5)

= 3 A, di/dt = 100A/µs

260
935

7.2

when VDSincreases from 0 to 80%

oss

3

12

1.6 V

ns
ns

ns
ns
ns

A
A

ns

nC

A

3/13

STP4NK50Z - STP4NK50ZFP - S TD4N K 50Z - STD4NK50Z-1

Safe Operating For TO-220

Safe Operating Area For TO-220FP Thermal Im pedance For TO-220FP

Thermal Impedance For TO-220

Safe Operating A rea For DPAK/IPAK

4/13

Thermal Impedance For DPAK/IPAK

STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1

Output Characteristics

Transconductance

Transfer Characteristics

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Capacitance Variations

5/13

STP4NK50Z - STP4NK50ZFP - S TD4N K 50Z - STD4NK50Z-1

Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.

Source-drain Diode Forward Characteristics

Maximum Avalanche Energy vs Temperature

Normalized BVDSS vs Te mperature

6/13

STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1

Fig. 2: Unclamped Inductive W av eformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

7/13

STP4NK50Z - STP4NK50ZFP - S TD4N K 50Z - STD4NK50Z-1

E

P011C

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A

C

D

8/13

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

F

H2

G

F2

L4

STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L5

L4

9/13

STP4NK50Z - STP4NK50ZFP - S TD4N K 50Z - STD4NK50Z-1

P032P_B

TO-252 (DPAK) MECHANICAL DATA

DIM.

A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024

C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0

MIN. TYP. MAX. MIN. TYP. MAX.

o

mm inch

o

8

o

0

o

0

10/13

STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1

0068771-E

TO-251 (IPAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

H

C

A

C2

E

= =

L2

B2

= =

D

B3

2

1 3

L1

A1

L

B6

A3

B

B5

G

= =

11/13

STP4NK50Z - STP4NK50ZFP - S TD4N K 50Z - STD4NK50Z-1

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

All dimensions

areinmillimeters

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

* on sales type

12/13

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

2500 2500

STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1

Information furnished is believed to be accurate and reliable. However , STMicroelectronics assum es no responsibility for the
consequences of use of su ch in formation nor for any in fringement of patents or other rights of third parties w hich may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication su persedes and replaces all in formation
previously suppli ed. STMi croelect ronics pr oducts are not author ized for use as cr itical component s in li fe suppo rt devi ces or
systems without express written approval of STMicroelectronics.

Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco

© The ST logo is a registered trademark of STMicroelectronics

© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved

Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.

STMicroelectronics GROUP OF COMPANIES

© http://www.st.com

13/13