Datasheet STD4NB40-1 Datasheet (SGS Thomson Microelectronics)

STD4NB40

STD4NB40-1

N-CH A NNEL 400V - 1.47Ω - 4A DPAK/IPAK

PowerMESH™ MOSFET

TYPE V

STD4NB40 400 V < 1.8 Ω 4 A

■ TYPICAL R

■ EXTREMELY HIGH dv /d t C APABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ ADD SUFFIX “T4” FOR ORDERING IN TAPE &

DS

DSS

(on) = 1.47 Ω

R

DS(on)

I

D

REEL

DESCRIPTION

Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad­vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi­nation structure, gives the lowest R

DS(on)

per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris­tics.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITH MODE POWER SUPPLI ES ( SMPS)

■ DC-DC CONVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT

3

1

DPAK

TO-252

INTERNAL SCHEMATIC DIAGRAM

IPAK

TO-251

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt (1) Peak Diode Recovery voltage slope 4 V/ns

T

stg

T

j

(•)Pu l se width limited by safe operati ng area

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 30 V

Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C

(●)

Drain Current (pulsed) 16 A
Total Dissipation at TC = 25°C
Derating Factor 0.47 W/°C

Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

(1) ISD≤ 4A, di/dt≤200 A/µs, VDD≤ V

400 V
400 V

4A

2.52 A

60 W

, Tj≤ T

(BR)DSS

jMAX

1/10June 2001

STD4NB40/STD4NB40-1

THERMA L D ATA

Rthj-case Thermal Resistance Junction-case Max 2.1 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 275 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source

= 25 °C, ID = IAR, VDD = 50 V)

j

ID = 250 µA, VGS = 0 400 V

4A

230 mJ

Breakdown Voltage

= Max Rating

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

V

DS

V

= Max Rating, TC = 125 °C

DS

V

= ± 30V ±100 nA

GS

1µA

10 µA

ON

(1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

V

= VGS, ID = 250µA

DS

VGS = 10V, ID = 2.3 A

234V

1.47 1.8 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS > I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 72 pF
Reverse Transfer

Capacitance

I

D

V

DS

= 2.3 A

D(on)

x R

DS(on)max,

= 25V, f = 1 MHz, VGS = 0

2.4 S

405 pF

9pF

2/10

STD4NB40/STD4NB40-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time 8 ns
Total Gate Charge

Gate-Source Charge 7 nC
Gate-Drain Charge 5.1 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t
t

f

c

Off-Voltage Rise Time
Fall Time
Cross-over Time

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1. 5 %.

2. Pulse width li mited by safe operating area .

Source-drain Current 4 A

(2)

Source-drain Current (pulsed) 16 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge 1.6 µC
Reverse Recovery Current 10.5 A

= 200 V, ID = 2.5 A

DD

RG= 4.7Ω VGS = 10 V
(see test circuit, Figure 3)

V

= 320V, ID = 5 A,

DD

VGS = 10V

= 320V, ID = 5 A,

V

DD

RG=4.7Ω, V

GS

= 10V

(see test circuit, Figure 3)

ISD = 4 A, VGS = 0
I

= 5 A, di/dt = 100A/µs

SD

VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)

11 ns

14.5 20 nC

9
6

14

1.6 V

300 ns

ns
ns
ns

Thermal Imp e danceSafe Operating Area

3/10

STD4NB40/STD4NB40-1

Output Characteristics

Transconductance Static Drain-source On Resistance

Transfer Characteristics

4/10

Capacitance VariationsGate Charge vs Gate-source Voltage

STD4NB40/STD4NB40-1

Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

5/10

STD4NB40/STD4NB40-1

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/10

TO-252 (DPAK) MECHANICAL DATA

STD4NB40/STD4NB40-1

DIM.

A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0

MIN. TYP. MAX. MIN. TYP. MAX.

o

mm inch

o

8

o

0

o

0

P032P_B

7/10

STD4NB40/STD4NB40-1

TO-251 (IPAK) MECHANICAL DAT A

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370

L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

H

8/10

A

C2

L2

E

B2

= =

= =

D

B3

2

1 3

L1

A1

L

B6

C

A3

B

B5

G

= =

0068771-E

STD4NB40/STD4NB40-1

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

All dimensions

are in millimeters

REEL MECHANICAL DATA

DIM.

A 330 12.992

B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968

T 22.4 0.881

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

* on sales type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

2500 2500

9/10

STD4NB40/STD4NB40-1

10/10

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such informa tion n or for an y infring ement of patent s or other rig hts of third part ies which may resu lt from its use . No l i cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.

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