Page 1
STD4NB40
N - CHANNEL ENHANCEMENT MODE
PowerMESH MOSFET
PRELIMINARY DATA
TYPE V
DSS
R
DS(on)
I
D
ST D4 NB40 400 V < 1.8 Ω 3.7 A
■ TYPICALR
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ VERYLOW INTRINSIC CAPACITANCES
■ GATECHARGEMINIMIZED
DS(on)
=1.47 Ω
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
per area, exceptional avalanche
DS(on)
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■ SWITCHMODEPOWER SUPPLIES(SMPS)
■ DC-ACCONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
3
2
IPAK
TO-251
(Suffix”-1”)
1
(Suffix ”T4”)
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
V
V
V
I
DM
P
dv/dt(
T
(•) Pulse width limited by safe operating area (1)ISD≤3.7A, di/dt ≤ 200 A/µs, VDD≤ V
February 1998
Drain-source Voltage (VGS=0) 400 V
DS
Drain- gate Voltage (RGS=20kΩ)
DGR
Gat e- source Vo lt age ± 30 V
GS
I
Drain Cur rent (c on t inuous) a t Tc=25oC3.7A
D
I
Drain Cur rent (c on t inuous) a t Tc=100oC2.3A
D
400 V
(•) Dra in Curr ent (pulsed) 14.8 A
Tot al Dissip at ion at Tc=25oC50W
tot
Derating Factor 0.4 W/
1) Peak Diode Rec overy voltage slope 4.5 V/ns
Sto rage Tempe rature -65 to 150
stg
T
Max. Operating Ju nc tion T emperat ure 150
j
,Tj≤T
(BR)DSS
JMAX
o
C
o
C
o
C
1/6
Page 2
STD4NB40
THERMAL DATA
R
thj-case
Rthj-a mb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Value Uni t
I
AR
E
Ther mal Resist ance Junctio n-case Max
Ther mal Resist ance Junctio n-ambient Max
Ther mal Resist ance Case-sink T y p
Maximum Lead Tem per a t u re F o r Soldering Purpos e
l
Avalanche Cur rent, Repet it i v e or Not-Re petitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max, δ <1%)
j
2.5
100
1.5
275
3.7 A
60 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Cond itions Min. Typ. Ma x. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
400 V
Breakdown V oltage
I
DSS
I
GSS
Zer o Gat e V o lt age
Drain Current (V
GS
Gat e-body Leaka ge
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRating Tc=125oC
DS
= ± 30 V
V
GS
1
50
± 100 nA
ON (∗)
Symbol Parameter Test Cond itions Min. Typ. Ma x. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
345V
Voltage
R
DS(on)
Stati c D rain-source On
VGS=10V ID=2.3 A 1.47 1.8 Ω
Resistance
I
D(on)
On State Drain Curre nt VDS>I
D(on)xRDS(on)max
4.7 A
VGS=10V
DYNAMIC
Symbol Parameter Test Cond itions Min. Typ. Ma x. Unit
g
(∗)Forward
fs
Tr ansconductanc e
C
C
C
Input Capac i t an c e
iss
Out put C apa c itance
oss
Reverse Transf er
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=2.3 A 1.5 2.4 S
VDS=25V f=1MHz VGS= 0 405
72
9
526
94
12
µA
µA
pF
pF
pF
2/6
Page 3
STD4NB40
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Cond itions Min. Typ. Ma x. Unit
t
d(on)
Turn-on Time
r
Rise Tim e
t
VDD=200V ID=2.3A
=4.7 Ω VGS=10V
R
G
11
8
(see test circuit, figure 3)
Q
Q
Q
Total Gate Charge
g
Gat e-Sour ce Cha rge
gs
Gate-Drain Charge
gd
VDD=320V ID=4.7 A VGS= 1 0 V 14.5
7
5.1
SWITCHINGOFF
Symbol Parameter Test Cond itions Min. Typ. Ma x. Unit
t
r(Voff)
t
t
Of f - voltage Rise Time
Fall Time
f
Cross-ov er Time
c
VDD=480V ID=4.7A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
9
6
14
SOURCE DRAIN DIODE
Symbol Parameter Test Cond itions Min. Typ. Ma x. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse width limited by safe operating area
Source-drain Curre nt
(•)
Source-drain Curre nt
(pulsed)
(∗) For ward On Volt age ISD=4.7A VGS=0 1.6 V
Reverse Recov er y
rr
Time
Reverse Recov er y
rr
= 4 .7 A di/dt = 100 A/µs
I
SD
=100V Tj=150oC
V
DD
(see test circuit, figure 5)
300
1.6
Charge
Reverse Recov er y
10.5
Current
17
12
22 nC
13
10
20
4.7
19
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
3/6
Page 4
STD4NB40
Fig. 1: Unclamped InductiveLoad TestCircuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: SwitchingTimesTest CircuitsFor
ResistiveLoad
Fig. 5: Test Circuit For Inductive Load Switching
And Diode RecoveryTimes
Fig. 4: Gate Charge test Circuit
4/6
Page 5
TO-251 (IPAK) MECHANICAL DATA
STD4NB40
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
A
E
==
C2
L2
B2
==
H
C
A3
A1
B6
L
B
B5
G
==
D
B3
2
13
L1
0068771-E
5/6
Page 6
STD4NB40
TO-252(DPAK) MECHANICAL DATA
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039
H
6/6
A
E
C2
L2
B2
==
==
DETAIL”A”
D
2
13
L4
A1
C
A2
DETAIL”A”
B
G
==
0068772-B
Page 7
STD4NB40
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent orpatent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in thispublication are subjectto change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics productsare not authorizedfor use as critical componentsin life support devicesor systems without express
written approval ofSGS-THOMSON Microelectonics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
...
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