Page 1
STD4NA40
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
■ TYPICAL R
DS(on)
= 1.7 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
o
C
■ APPLICATION ORIENTED
CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTINGDPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
■ HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ INDUSTRIALACTUATORS
■ DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
■ PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
INTERNAL SCHEMATIC DIAGRAM
TYPE V
DSS
R
DS(on)
I
D
STD 4NA40 400 V < 2 Ω 3.3 A
November 1996
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
V
DS
Drain - s ource Voltage (VGS= 0) 400 V
V
DGR
Drain- gate Voltage (RGS=20kΩ) 400 V
V
GS
Gate-source Voltage ± 30 V
I
D
Drain Current (continuous) at Tc=25oC3.3A
I
D
Drain Current (continuous) at Tc=100oC2.1A
I
DM
(•) Drain Current (pulsed) 13.2 A
P
tot
Total Di ssipation a t Tc=25oC50W
Derat ing Factor 0.4 W/
o
C
T
stg
St or a ge Tem perature -65 t o 150
o
C
T
j
Max. Operating Jun ction T emperature 150
o
C
(•) Pulsewidth limited bysafe operating area
1
3
2
IPAK
TO-251
(Suffix ”-1”)
1
3
DPAK
TO-252
(Suffix ”T4”)
1/10
Page 2
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction - cas e Max
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum L ead Temperat ur e For Soldering Purpos e
2.5
100
1.5
275
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Uni t
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(pulse width limited by Tjmax, δ <1%)
3.3 A
E
AS
Single Pul se Avalanche Ener gy
(starti ng Tj=25oC, ID=IAR,VDD=50V)
60 mJ
E
AR
Repetitive Avalanc he Energ y
(pulse width limited by Tjmax, δ <1%)
2.5 mJ
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(Tc= 100oC, pulse width l imited by Tjmax, δ <1%)
2.1 A
ELECTRICAL CHARACTERISTICS (T
case
=25oC unless otherwisespecified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
Break d own Volta ge
ID=250µAVGS= 0 400 V
I
DSS
Zer o G at e V oltage
Drain Current (V
GS
=0)
V
DS
=MaxRating
V
DS
= Max Rating x 0.8 Tc=125oC
25
250
µA
µA
I
GSS
Gat e- body Leakage
Current (VDS=0)
VGS= ± 20 V ± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage VDS=VGSID=250µA 2.25 3 3.75 V
R
DS(on)
St at ic Drain-s our ce O n
Resistance
VGS=10V ID=2A 1.7 2 Ω
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
VGS=10V
4A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(∗)Forward
Tr ansconductance
VDS>I
D(on)xRDS(on)maxID
=2A 1.0 2.5 S
C
iss
C
oss
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VDS=25V f=1MHz VGS=0 375
70
18
490
90
25
pF
pF
pF
STD4NA40
2/10
Page 3
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on T ime
Rise Time
VDD=200V ID=2A
RG=18 Ω VGS=10V
(see test circuit, figure 3)
13
22
20
30
ns
ns
(di/dt)
on
Turn-on Current S lope VDD=320V ID=4A
RG=18 Ω VGS=10V
(see test circuit, figure 5)
385 A/µs
Q
g
Q
gs
Q
gd
Total Gate Charge
Gat e- Source Charge
Gate-Drain Charge
VDD= 320 V ID=4A VGS=10V 20
5
8
28 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Off -voltage Rise Time
Fall Time
Cross-over Time
VDD=320V ID=4A
RG=18 Ω VGS=10V
(see test circuit, figure 5)
12
9
21
18
14
30
ns
ns
ns
SOURCE DRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
(•)
Source-drain C urrent
Source-drain C urrent
(pulsed)
4
16
A
A
V
SD
(∗) Forward On Voltage ISD=4A VGS=0 1.6 V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD= 4 A di/dt = 100 A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)
355
4.3
24
ns
µC
A
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Area Thermal Impedance
STD4NA40
3/10
Page 4
Derating Curve
Transfer Characteristics
Static Drain-source On Resistance
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
STD4NA40
4/10
Page 5
Capacitance Variations Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature Turn-on Current Slope
Cross-over TimeTurn-off Drain-source Voltage Slope
STD4NA40
5/10
Page 6
Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms
Switching SafeOperating Area Accidental Overload Area
Source-drain Diode Forward Characteristics
STD4NA40
6/10
Page 7
Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 3: Switching Times Test Circuits For
Resistive Load
STD4NA40
7/10
Page 8
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
D
A
C2
C
L
A3
L2
L1
13
H
==
B3
B
B6
B2
E
G
A1
==
==
B5
2
TO-251 (IPAK) MECHANICAL DATA
0068771-E
STD4NA40
8/10
Page 9
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039
A
C2
C
H
A1
A2
==
D
L2
L4
13
==
B
E
==
B2
G
2
DETAIL”A”
DETAIL”A”
TO-252 (DPAK) MECHANICAL DATA
0068772-B
STD4NA40
9/10
Page 10
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rightsof third parties which mayresults fromits use. No
licenseis granted by implication or otherwise under any patentor patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in thispublication are subject to change withoutnotice. Thispublication supersedes andreplacesall information previously supplied.
SGS-THOMSONMicroelectronics products are not authorizedfor use ascriticalcomponents in lifesupport devices or systems withoutexpress
writtenapproval ofSGS-THOMSONMicroelectonics.
1996 SGS-THOMSON Microelectronics -Printed in Italy- AllRightsReserved
SGS-THOMSONMicroelectronics GROUPOF COMPANIES
Australia- Brazil -Canada -China - France- Germany - HongKong- Italy - Japan- Korea- Malaysia - Malta- Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland-Taiwan - Thailand- UnitedKingdom - U.S.A
.
STD4NA40
10/10
Loading...