Page 1
STD4N25
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE V
DSS
R
DS(on)
I
D
STD 4N25 250 V < 1.1 Ω 4A
■ TYPICAL R
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ APPLICATION ORIENTED
DS(on)
= 0.7 Ω
o
C
CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTINGDPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
■ HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ INDUSTRIALACTUATORS
■ DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
■ PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
3
2
1
IPAK
TO-251
(Suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
1
DPAK
TO-252
(Suffix ”T4”)
3
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
V
V
V
I
DM
P
T
(•) Pulsewidth limited bysafe operating area
December 1996
Drain - s ource Voltage (VGS= 0) 250 V
DS
Drain- gate Voltage (RGS=20kΩ) 250 V
DGR
Gate-source Voltage ± 20 V
GS
Drain Current (continuous) at Tc=25oC4A
I
D
Drain Current (continuous) at Tc=100oC2.5A
I
D
(•) Drain Current (pulsed) 16 A
Total Di ssipation a t Tc=25oC50W
tot
Derat ing Factor 0.4 W/
St or a ge Tem perature -65 t o 150
stg
Max. Operating Jun ction T emperature 150
T
j
o
o
o
C
C
C
1/10
Page 2
STD4N25
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Uni t
I
AR
E
E
I
AR
Thermal Resistance Junction - cas e Max
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum L ead Temperat ur e For Soldering Purpos e
l
Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng Tj=25oC, ID=IAR,VDD=50V)
Repetitive Avalanc he Energ y
AR
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(Tc= 100oC, pulse width l imited by Tjmax, δ <1%)
2.5
100
1.5
275
4A
20 mJ
5mJ
2.5 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
ID=250µAVGS= 0 250 V
Break d own Volta ge
I
DSS
I
GSS
Zer o G at e V oltage
Drain Current (V
GS
Gat e- body Leakage
=0)
=MaxRating
V
DS
V
= Max Rating x 0.8 Tc=125oC
DS
10
100
VGS= ± 20 V ± 100 nA
Current (VDS=0)
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=250µA234V
St at ic Drain-s our ce O n
VGS=10V ID=2A 0.7 1.1 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
4A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=2A 1 2.5 S
VDS=25V f=1MHz VGS=0 500
85
15
700
120
30
µA
µA
pF
pF
pF
2/10
Page 3
STD4N25
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on T ime
t
Rise Time
r
Turn-on Current S lope VDD=200V ID=4A
on
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
Off -voltage Rise Time
t
Fall Time
f
Cross-over Time
c
SOURCE DRAINDIODE
VDD=125V ID=2A
RG=50 Ω VGS=10V
30
60
(see test circuit, figure 3)
220 A/µs
RG=50 Ω VGS=10V
(see test circuit, figure 5)
VDD= 200 V ID=4A VGS=10V 20
6
6
VDD=200V ID=4A
RG=50 Ω VGS=10V
(see test circuit, figure 5)
35
20
60
45
90
30 nC
50
30
90
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
I
SDM
SD
Source-drain C urrent
(•)
Source-drain C urrent
4
16
(pulsed)
V
(∗) Forward On Voltage ISD=4A VGS=0 1.5 V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD=4A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)
160
0.8
Charge
I
RRM
Reverse Recovery
10
Current
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Area Thermal Impedance
A
A
ns
µC
A
3/10
Page 4
STD4N25
Derating Curve
Transfer Characteristics
Output Characteristics
Transconductance
Static Drain-source On Resistance
4/10
Gate Charge vs Gate-source Voltage
Page 5
Capacitance Variations Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature Turn-on Current Slope
STD4N25
Cross-over TimeTurn-off Drain-source Voltage Slope
5/10
Page 6
STD4N25
Switching SafeOperating Area Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms
6/10
Page 7
STD4N25
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge Test Circuit
7/10
Page 8
STD4N25
TO-251 (IPAK) MECHANICAL DATA
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
8/10
A
E
==
C2
L2
B2
==
H
C
A3
A1
B6
L
B
B5
G
==
D
B3
2
13
L1
0068771-E
Page 9
TO-251 (IPAK) MECHANICAL DATA
STD4N25
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
A
E
==
C2
L2
B2
==
H
C
A3
A1
B6
L
B
B5
G
==
D
B3
2
13
L1
0068771-E
9/10
Page 10
STD4N25
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rightsof third parties which mayresults fromits use. No
licenseis granted by implication or otherwise under any patentor patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in thispublication are subject to change withoutnotice. Thispublication supersedes andreplacesall information previously supplied.
SGS-THOMSONMicroelectronics products are not authorizedfor use ascriticalcomponents in lifesupport devices or systems withoutexpress
writtenapproval ofSGS-THOMSONMicroelectonics.
1996 SGS-THOMSON Microelectronics -Printed in Italy- AllRightsReserved
Australia- Brazil -Canada -China - France- Germany - HongKong- Italy - Japan- Korea- Malaysia - Malta- Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland-Taiwan - Thailand- UnitedKingdom - U.S.A
SGS-THOMSONMicroelectronics GROUPOF COMPANIES
.
10/10
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