Datasheet STD45NF03L Datasheet (SGS Thomson Microelectronics)



N - CHANNEL 30V - 0.011 Ω - 45A DPAK

TYPE V

DSS

ST D45N F 03L 30 V < 0.013 Ω 45 A

■ TYPICALR

■ LOW THRESHOLDDRIVE

■ ADDSUFFIX ”T4” FORORDERING IN TAPE

DS(on)

= 0.011 Ω

& REEL

DESCRIPTION

This Power MOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor shows extremelyhigh packing density forlow
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re­markablemanufacturingreproducibility.

APPLICATIONS

■ HIGHCURRENT, HIGH SPEEDSWITCHING

■ MOTORCONTROL, AUDIOAMPLIFIERS

■ DC-DC& DC-AC CONVERTERS

R

DS(o n)

I

D

STD45NF03L

STripFET POWER MOSFET

PRELIMINARY DATA

3

1

DPAK

TO-252

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t

V

V

V

I

DM

P

E

AS(1

T

(•) Pulse width limited by safe operating area (1) starting Tj

September 1999

Dra in- sour c e Vol ta ge (VGS=0) 30 V

DS

Drain- gate Voltage (RGS=20kΩ)30V

DGR

Gate-s ource Voltage ± 20 V

GS

Dra in Current ( cont inuous) at Tc=25oC45A

I

D

Dra in Current ( cont inuous) at Tc= 100oC 31.5 A

I

D

(•) D ra in Current ( pulsed) 180 A

Tot al Dissi pat io n a t Tc=25oC55W

tot

Der ati ng Fact or 0.37 W/

) Single Pu lse A v alan c he Energy 200 mJ

St orage Tem pe ra t ure -65 to 175

stg

Max. Operat ing Junct ion Te m pe ra t ure 175

T

j

=25oC, ID= 22.5A, VDD= 20V

o

C

o

C

o

C

1/6

STD45NF03L

THERMAL DATA

R

thj-pcb

R

thj-amb

R

thj-sink

T

Ther mal Resistanc e Junct ion-PC Boa rd Max
Ther mal Resistanc e Junct ion-ambie nt Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Temper a tu r e For Soldering Pu rpos e

l

2.7

62.5

0.5

275

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 30 V

Break dow n Voltage

I

DSS

I

GSS

Zero Gate Volta ge
Drain Current (V

GS

Gat e- bod y L eak ag e
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc= 125oC

V

DS

V

= ± 20 V ± 100 nA

GS

1

10

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID= 250 µ A11.52.5V
Sta t ic Drain -s ource O n

Resistance

VGS=10V ID= 22.5 A

=4.5V ID= 22.5 A

V

GS

On State Drain Current VDS>I

D(on)xRDS(on)max

0.011

0.013

30 A

0.013

0.018ΩΩ

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input C apaci t anc e

iss

Out put Capacitance

oss

Reverse Tr ansfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on)maxID

=22.5

60 S

A
VDS=25V f=1MHz VGS= 0 V 2550

630
215

µ
µA

pF
pF
pF

A

2/6

STD45NF03L

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Tur n-on Delay Time
Rise Ti m e

t

r

VDD=15V ID= 22.5 A
R

=4.7

G

Ω

VGS=4.5V

40

250

(Resis t iv e Loa d, see fig. 3 )

Q
Q
Q

Tot al Gat e Charge

g

Gat e- Source Char g e

gs

Gate-Drain Charge

gd

VDD=24V ID=22.5A VGS=5V 43

12
21

58 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Tur n-of f D ela y Time

t

Fall T ime

f

VDD=15V ID= 22.5 A

=4.7 Ω VGS=4.5V

R

G

60
70

(Resis t iv e Loa d, see fig. 3 )

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

V

I

SDM

SD

Q

I

RRM

SD

t

Source-drain Current

(•)

Source-drain Current

45

180

(pulsed)

(∗)ForwardOnVoltage ISD=45A VGS=0 1.5 V

Reverse Recover y

rr

Time
Reverse Recover y

rr

ISD= 45 A di/dt = 100 A/µs

=15V Tj=150oC

V

DD

(see test circuit, fig. 5)

75

100
Charge
Reverse Recover y

2.6

Current

ns
ns

nC
nC

ns
ns

A
A

ns

nC

A

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
(•) Pulse width limited by safe operatingarea

3/6

STD45NF03L

Fig. 1:

UnclampedInductiveLoad Test Circuit

Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad

Fig. 2:

UnclampedInductive Waveform

Fig. 4: Gate Chargetest Circuit

Fig. 5:

Test CircuitFor InductiveLoad Switching

And Diode Recovery Times

4/6

TO-252 (DPAK) MECHANICAL DATA

STD45NF03L

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397

L2 0.8 0.031
L4 0.6 1 0.023 0.039

H

A

E

C2

L2

B2

==

==

DETAIL”A”

D

2

13

L4

A1

C

A2

DETAIL”A”

B

G

==

0068772-B

5/6

STD45NF03L

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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publicationare
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are not authorized for use as critical components in lifesupport devicesor systemswithout express written approval of STMicroelectronics.

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