Datasheet STP4NM60, STD3NM60-1, STD3NM60 Datasheet (SGS Thomson Microelectronics)

STP4NM60

3

STD3NM60 - STD3NM60-1

N-CHANNEL 600V - 1.3Ω - 3A TO-220/DPAK/IPAK

Zener-Protected MDmesh™Power MOSFET

TYPE V

STP4NM60
STD3NM60
STD3NM60-1

■ TYPICAL R

■ HIGH dv/dt AND AVALANCHE CAPABILITIES

■ IMPROVED ESD CAPABILITY

■ LOW INPUT CAPACITANCE AND GATE

600 V
600 V
600 V

(on) = 1.3 Ω

DS

DSS

R

DS(on)

< 1.5 Ω
< 1.5 Ω
< 1.5 Ω

I

D

4 A
3 A
3 A

Pw

69 W
42 W
42 W

CHARGE

■ LOW GATE INPUT RESIST ANC E

■ TIGHT PROCESS CONTROL AND HIGH

MANUFACTORING YIELDS

DESCRIPTION

The MDmesh™

is a new revolutionary MOSFET

technology that associates the Multiple Drain pro­cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.

IPAK

TO-220

3

1

DPAK

INTERNAL SCHEMATIC DIAGRAM

2

1

APPLICATIONS

The MDmesh™ family is very suitable for increase
the power density of high voltage converters allow­ing system miniaturization and higher efficiencies.

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP4NM60 P4NM60 TO-220 TUBE

STD3NM60T4 D3NM60 DPAK TAPE & REEL

STD3NM60-1 D3NM60 IPAK TUBE

1/12September 2002

STP4NM60 / STD3NM60 / STD3NM60-1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP4NM60

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

600 V
600 V

Gate- source Voltage ± 30 V

Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C

(l)

Drain Current (pulsed) 16 12 A
Total Dissipation at TC = 25°C

43A

2.52 1.9 A

69 42 W

Derating Factor 0.55 0.33 W/°C

dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns

T

j

T

stg

(l) Pulse wi dth limited by safe operating area
(1) I

≤3A, di/dt ≤400 µA, VDD ≤ V

SD

Operating Junction Temperature
Storage Temperature

, Tj ≤ T

(BR)DSS

JMAX.

-65 to 150

-65 to 150

THERMA L D ATA

TO-220

Rthj-case Thermal Resistance Junction-case Max 1.82 3 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose

300 °C

STD3NM60

STD3NM60-1

DPAK

IPAK

°C
°C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID = IAR, VDD = 50 V)

j

1.5 A

200 mJ

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 30 V

Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.

2/12

STP4NM60 / STD3NM 60 / STD3NM60-1

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID = 250 µA, VGS = 0 600 V

Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Zero Gate Voltage
Drain Current (V

GS

= 0)

Gate-body Leakage
Current (V

DS

= 0)
Gate Threshold Voltage
Static Drain-source On

V

= Max Rating

DS

VDS = Max Rating, TC = 125 °C
V

= ± 20V ±5 µA

GS

V

= VGS, ID = 250µA

DS

345V

1

10

VGS = 10V, ID = 1.5 A 1.3 1.5 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(1) Forward Transconductance VDS = 15 V, ID= 1.5 A 2.7 S

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

= 25V, f = 1 MHz, VGS = 0 324

V

DS

132

7.4

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

Turn-on Delay Time

t

r

g
gs
gd

Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

VDD = 300 V, ID = 1.5 A
RG= 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)

= 480V, ID = 3 A,

V

DD

V

= 10V

GS

9
4

10

3

4.7

14

µA
µA

pF
pF
pF

ns
ns

nC
nC
nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 480 V, ID = 3 A,

t

r(Voff)

t
t

Off-voltage Rise Time

f

c

Fall Time
Cross-over Time

V

DD

RG=4.7Ω, V

GS

= 10V

(Inductive Load see, Figure 5)

16.5

10.5
15

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pu l se duration = 300 µs, duty c ycle 1.5 %.

2. Pulse width li mited by safe operating area.

Source-drain Current

(2)

Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

ISD = 3 A, VGS = 0
I

SD

V

DD

(see test circuit, Figure 5)
I

SD

VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)

= 3 A, di/dt = 100A/µs

= 100 V, Tj = 25°C

= 3 A, di/dt = 100A/µs

224

1
9

296

1.4

9.3

3

12

1.5 V

ns
ns
ns

A
A

ns

µC

A

ns

µC

A

3/12

STP4NM60 / STD3NM60 / STD3NM60-1

Safe Operating Area For TO-220

Thermal Impedance For TO-220

Thermal Impedance For DPAK / IPAKSafe Operating Area For DPAK / IPAK

Output Characteristics

4/12

Transfer Characteristics

STP4NM60 / STD3NM 60 / STD3NM60-1

Static Drain-source On ResistanceTransconductanc e

Capacitance VariationsGate Charge vs Gate-source Voltage

Normalized On Resistance vs Temperatur eNormalized Gate Threshold Volta ge vs Temp.

5/12

STP4NM60 / STD3NM60 / STD3NM60-1

Source-drain Diode Forward Characteristics

6/12

STP4NM60 / STD3NM 60 / STD3NM60-1

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

7/12

STP4NM60 / STD3NM60 / STD3NM60-1

E

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A

C

D

8/12

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

F

H2

G

F2

L4

P011C

STP4NM60 / STD3NM 60 / STD3NM60-1

TO-252 (DPAK) MECHANICAL DATA

DIM.

A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024

C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0

MIN. TYP. MAX. MIN. TYP. MAX.

o

mm inch

o

8

o

0

o

0

P032P_B

9/12

STP4NM60 / STD3NM60 / STD3NM60-1

TO-251 (IPAK) MECHANICAL DAT A

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

H

C

A

10/12

C2

E

= =

L2

B2

= =

D

B3

2

1 3

L1

A1

L

B6

A3

B

B5

G

= =

0068771-E

STP4NM60 / STD3NM 60 / STD3NM60-1

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

All dimensions

are in millimeters

REEL MECHANICAL DATA

DIM.

A 330 12. 992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0 .795

G 16.4 18.4 0 .645 0.724

N 50 1.968
T 22.4 0.881

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

* on sales type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

2500 2500

11/12

STP4NM60 / STD3NM60 / STD3NM60-1

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mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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12/12