Datasheet STD3NM50-1, STD3NM50 Datasheet (SGS Thomson Microelectronics)

STD3NM50

STD3NM50-1

N-CHANNEL 500V - 2.5Ω - 3A D PAK/IPAK

Zener-Protected MDmesh™Power MOSFET

TYPE V

STD3NM50
STD3NM50-1

■ TYPICAL R

■ HIGH dv/dt AND AVALANCHE CAPABILITIES

■ IMPROVED ESD CAPABIL ITY

■ LOW INPUT CAPACITANCE AND GATE

DS

DSS

500V
500V

(on) = 2.5 Ω

R

DS(on)

<3Ω
<3Ω

I

D

3A
3A

CHARGE

■ LOW GATE INPUT RESISTANCE

■ TIGHT PROCESS CONTROL AND HIGH

MANUFACTORING YIELDS

DESCRIPTION

The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro­cess with the Company’s PowerMESH™ horizontal
layout. Theresulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.

APPLICATIONS

The MDmesh™ family is very suitable for increase
the power density of high voltage converters allow­ing system miniaturization and higher efficiencies.

3

DPAK

TO-252

1

IP AK

TO-251

1

INTERNAL SCHEMATIC DIAGRAM

3

2

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

IDM(●)

P

TOT

V

ESD(G-S)

dv/dt(1) Peak Diode Recovery voltage slope 15 V/ns

T

stg

T

j

(•)Pulse width limited by safe operating area

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ±30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
Drain Current (pulsed) 12 A
T ot al Dissipation at TC= 25°C
Gate source ESD(HBM-C=100pF , R=15KΩ) 4KV
Derating Factor 0.37 W/°C

Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

(1)ISD<3A, di/dt<400A/µs, VDD<V

500 V
500 V

3A

1.89 A

46 W

(BR)DSS,TJ<TJMAX

1/10April 2003

STD3NM50/STD3NM50-1

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 2.73 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Maximum Lead Temperature For Soldering Purpose 300 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID=IAR,VDD=50V)

j

1A

130 mJ

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS O THERWISE SPECIFIED)

CASE

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=1mA,VGS= 0 500 V

Breakdown Voltage

= Max Rating

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

=0)

=0)

V

DS

= Max Rating, TC= 125 °C

V

DS

V

= ± 20V ± 5 µA

GS

1µA

10 µA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

V

DS=VGS,ID

VGS=10V,ID= 1.5A

= 250µA

345V

2.5 3 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS>I

g

fs

ID=3A

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 40 pF
Reverse Transfer

V

Capacitance

R

G

Gate Input Resistance f=1 MHz Gate DC Bias = 0

Test Signal Level = 20mV
Open Drain

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

D(on)xRDS(on)max,

=25V,f=1MHz,VGS=0

DS

0.7

140 pF

4pF

4 Ω

S

2/10

STD3NM50/STD3NM50-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Q

g

Q

gs

Q

gd

Turn-on Delay Time
Rise Time

Total Gate Charge
Gate-Source Charge 2.5 nC
Gate-Drain Charge 2.4 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

f

t

c

Off-voltage Rise Time
Fall Time 9 ns
Cross-over Time 15 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe o perating area.

Source-drain Current 3 A

(2)

Source-drain Current (pulsed) 12 A

(1)

Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 790 nC
Reverse Recovery Current 7.5 A
Reverse Recovery Time
Reverse Recovery Charge 1.1 µC
Reverse Recovery Current 7.7 A

=250V,ID= 1.5A

V

DD

RG= 4.7Ω VGS=10V
(see test circuit, Figure 3)

V

=400V,ID= 3A,

DD

V

=10V

GS

V

= 480V, ID=3A,

DD

RG=4.7Ω, VGS= 10V
(see test circuit, Figure 5)

ISD= 3A, VGS=0
I

= 3A, di/dt = 100A/µs,

SD

V

=100V,Tj=25°C

DD

(see test circuit, Figure 5)

I

= 3A, di/dt = 100A/µs,

SD

V

=100V,Tj=150°C

DD

(see test circuit, Figure 5)

7ns

10 ns

5.5 nC

8ns

1.5 V

210 ns

282 ns

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 30 V

Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back -to-back Zener diodes have spec ifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective interven tio n to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.

3/10

STD3NM50/STD3NM50-1

Safe Operating Area For DPAK / IPAK Thermal Impedance For DPAK / IPAK

Output Characteristics

Transfer Characteristics

Static Drain-source On ResistanceTransconductance

4/10

STD3NM50/STD3NM50-1

Capacitance VariationsGate Charge vs Gate-so urc e V oltage

Normalized Gate Threshold Voltage vs Temp.

Normalized On Resistance vs Temperature

Normalized BVdss vs TemperatureSource-drain Diode Forward Characteristics

5/10

STD3NM50/STD3NM50-1

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Induct ive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/10

TO-252 (DPAK) MECHANICAL DATA

STD3NM50/STD3NM50-1

DIM.

A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0

MIN. TYP. MAX. MIN. TYP. MAX.

o

mm inch

o

8

o

0

o

0

P032P_B

7/10

STD3NM50/STD3NM50-1

TO-251 (IPAK) MECHANI CAL DAT A

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

H

8/10

A

C2

L2

E

B2

= =

= =

D

B3

2

1 3

L1

A1

L

B6

C

A3

B

B5

G

= =

0068771-E

STD3NM50/STD3NM50-1

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

All dimensions

areinmillimeters

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 6.8 7 0.267 0.275
B0 10.4 10 .6 0.409 0.417
B1 12.1 0.476

D 1.5 1.6 0. 059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4. 1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2. 1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

* on sales type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

2500 2500

9/10

STD3NM50/STD3NM50-1

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mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.

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