Datasheet STP3NK90ZFP, STP3NK90Z, STD3NK90Z-1, STD3NK90Z Datasheet (SGS Thomson Microelectronics)
Page 1
1/13November 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STP3NK90Z - STP3NK90ZFP
STD3NK90Z - STD3NK90Z-1
N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK
Zener-Protected SuperMESH™Power MOSFET
TYPICAL RDS(on) = 4.1 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH ™ series is obtained through an
extreme optimi za tio n of ST’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance s ignificantly down, special care is taken to ensure a very good dv/dt capability for the
most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
APPLICATIONS
HIGH CURRENT, HIGH S PEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING
ORDERING INFORMATION
TYPE V
DSS
R
DS(on)
I
D
Pw
STP3NK90Z
STP3NK90ZFP
STD3NK90Z
STD3NK90Z-1
900 V
900 V
900 V
900 V
< 4.8 Ω
< 4.8 Ω
< 4.8 Ω
< 4.8 Ω
3A
3A
3A
3A
90 W
25 W
90 W
90 W
SALES TYPE MARKING PACKAGE PACKAGING
STP3NK90Z P3NK90Z TO-220 TUBE
STP3NK90ZFP P3NK90ZFP TO-220FP TUBE
STD3NK90ZT4 D3NK90Z DPAK TAPE & REEL
STD3NK90Z-1 D3NK90Z IPAK TUBE
TO-220 TO-220FP
1
2
3
1
3
DPAK
3
2
1
IPAK
INTERNAL SCHEMATIC DIAGRAM
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STP3NK90Z - STP3NK90ZFP - S TD3N K90Z - STD3NK90Z-1
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ABSOLUTE MAXIMUM RATINGS
() Pulse width limited by safe operating area
(1) I
SD
≤3A, di/dt ≤200A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients thatmay occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol Parameter Value Unit
STP3NK90Z STP3NK90ZFP
STD3NK90Z
STD3NK90Z-1
V
DS
Drain-source Voltage (VGS=0)
900 V
V
DGR
Drain-gate Voltage (RGS=20kΩ)
900 V
V
GS
Gate- source Voltage ± 30 V
I
D
Drain Current (continuous) at TC= 25°C
3 3 (*) 3 A
I
D
Drain Current (continuous) at TC= 100°C
1.89 1.89 (*) 1.89 A
I
DM
()
Drain Current (pulsed) 12 12 (*) 12 A
P
TOT
Total Dissipation at TC= 25°C
90 25 90 W
Derating Factor 0.72 0.2 0.72 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
Insulation Withstand Voltage (DC) - 2500 - V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55to150 °C
TO-220 TO-220FP
DPAK
IPAK
Rthj-case Thermal Resistance Junction-case Max 1.38 5 1.38 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
3A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, ID=IAR,VDD=50V)
180 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain) 30 V
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STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1
ELECTRICAL CHARACTERISTICS (T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited bysafe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when VDSincreases from 0 to 80%
V
DSS
.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID=1mA,VGS= 0 900 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
V
DS
= Max Rating
VDS= Max Rating, TC= 125 °C
1
50
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
=0)
V
GS
= ± 30 V ±10 µA
V
GS(th)
Gate Threshold Voltage
V
DS=VGS,ID
=50µA
3 3.75 4.5 V
R
DS(on)
Static Drain-source On
Resistance
VGS=10V,ID= 1.5 A 4.1 4.8 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance VDS=15V,ID= 1.5 A 2.7 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
=25V,f=1MHz,VGS= 0 590
63
13
pF
pF
pF
C
oss eq.
(3) Equivalent Output
Capacitance
VGS=0V,VDS=0Vto400V 34 pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
VDD=450V,ID= 1.5 A
RG= 4.7Ω VGS=10V
(Resistive Load see, Figure 3)
18
7
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=720V,ID=3A,
V
GS
=10V
22.7
4.2
12
nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
VDD= 720 V, ID= 1.5 A
R
G
=4.7ΩVGS=10V
(Resistive Load see, Figure 3)
45
18
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 450V, ID=3A,
RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)
14.5
15
16
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
3
12
A
A
VSD(1)
Forward On Voltage
ISD= 3 A, VGS=0
1.6 V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 3 A, di/dt = 100A/µs
VDD=100V,Tj=150°C
(see test circuit, Figure 5)
510
2.2
8.7
ns
µC
A
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Safe Operating Area For TO-220FPSafe Operating Area For TO-220/DPAK/IPAK
Transfer Characteristics
Output Characteristics
Thermal Impedance For TO-220/DPAK/ IPAK
Thermal Impedance For TO-220FP
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5/13
STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1
Transconductance
Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature
Gate Charge vs Gate-source Voltage Capacitance Variations
Static Drain-source On Resistance
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STP3NK90Z - STP3NK90ZFP - S TD3N K90Z - STD3NK90Z-1
6/13
Maximum Avalanche Energy vs Temperature
Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature
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7/13
STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive W av eformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
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STP3NK90Z - STP3NK90ZFP - S TD3N K90Z - STD3NK90Z-1
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DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
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9/13
STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
123
F2
F1
L7
L4
L5
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
TO-220FP MECHANICAL DATA
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STP3NK90Z - STP3NK90ZFP - S TD3N K90Z - STD3NK90Z-1
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DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0
o
8
o
0
o
0
o
P032P_B
TO-252 (DPAK) MECHANICAL DATA
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11/13
STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
A
C2
C
A3
H
A1
D
L
L2
L1
1 3
= =
B3
B
B6
B2
E
G
= =
= =
B5
2
TO-251 (IPAK) MECHANICAL DATA
0068771-E
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TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
DPAK FOOTPRINT
* on sales type
DIM.
mm inch
MIN. MAX. MIN. MAX.
A 330 12.9 92
B 1.5 0.059
C 12. 8 13.2 0.504 0.520
D 20. 2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881
BASE QTY BULK QTY
2500 2500
REEL MECHANICAL DATA
DIM.
mm inch
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10 .6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
TAPE MECHANICAL DATA
All dimensions
areinmillimeters
All dimensions are in millimeters
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STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1
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