Datasheet STD3NK80ZT4 Specification

STD3NK80Z, STD3NK80Z-1

3

STF3NK80Z, STP3NK80Z

N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK

Zener-protected SuperMESH™ Power MOSFET

Features

V

Type

DSS

(@Tjmax)

R

DS(on)

I

D

STP3NK80Z 800 V < 4.5 Ω 2.5 A

STF3NK80Z 800 V < 4.5 Ω 2.5 A

STD3NK80Z 800 V < 4.5 Ω 2.5 A

STD3NK80Z-1 800 V < 4.5 Ω 2.5 A

■ Extremely high dv/dt capability

■ 100% avalanche tested

■ Gate charge minimized

■ Very low intrinsic capacitances

■ Very good manufacturing repeatability

Application

■ Switching applications

Description

The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.

TO-220

DPAK

3

1

TO-220FP

IPAK

Figure 1. Internal schematic diagram

D(2)

G(1)

S(3)

3

2

1

2

1

AM01476v1

Table 1. Device summary

Order codes Marking Package Packaging

STP3NK80Z P3NK80Z TO-220 Tube

STF3NK80Z F3NK80Z TO-220FP Tube

STD3NK80ZT4 D3NK80Z DPAK Tape and reel

STD3NK80Z-1 D3NK80Z IPAK Tube

September 2009 Doc ID 9565 Rev 6 1/18

www.st.com

18

Contents STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

2/18 Doc ID 9565 Rev 6

STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value

Symbol Parameter

V

I

P

V

DGR

V

DM

Drain-source voltage (VGS = 0) 800 V

DS

Drain-gate voltage (RGS = 20 kΩ)800V

Gate-source voltage ± 30 V

GS

Drain current (continuous) at TC = 25 °C 2.5

I

D

I

Drain current (continuous) at TC=100 °C 1.57

D

(2)

Drain current (pulsed) 10

Total dissipation at TC = 25 °C 70 25 W

TOT

Derating factor 0.56 0.2 W/°C

V

ESD(G-S)

dv/dt

V

T

T

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 2.5 A, di/dt ≤ 200 A/µs, VDD ≤ V

Gate source ESD
(HBM-C=100 pF, R=1.5 kΩ)

(3)

Peak diode recovery voltage slope 4.5 V/ns

Insulation withstand voltage (DC) 2500 V

ISO

Operating junction temperature

J

Storage temperature

stg

, Tj ≤ T

(BR)DSS

JMAX.

TO-220, DPAK

IPAK

2000 V

-55 to 150 °C

TO-220FP

(1)

2.5

(1)

1.57

(1)

10

Unit

A

A

A

Table 3. Thermal data

Symbol Parameter

R

thj-case

R

Thermal resistance junction-case max 1.78 5 1.78 °C/W

Thermal resistance junction-ambient max 62.5 100 °C/W

thj-a

Maximum lead temperature for soldering

T

l

purpose

Doc ID 9565 Rev 6 3/18

Value

TO-220 TO-220FP

300 °C

DPAK

IPAK

Unit

Electrical ratings STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

I

AR

E

Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)

Single pulse avalanche energy

AS

(starting Tj=25 °C, I

D=IAR

, VDD=50 V)

2.5 A

170 mJ

4/18 Doc ID 9565 Rev 6

STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Electrical characteristics

2 Electrical characteristics

(T

=25 °C unless otherwise specified)

CASE

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown
voltage

Zero gate voltage drain
current (V

GS

= 0)

Gate body leakage current
(VGS = 0)

Gate threshold voltage V

Static drain-source on
resistance

= 1 mA, VGS= 0 800 V

I

D

V

= max rating,

DS

= max rating,

V

DS

Tc = 125 °C

V

= ± 20 V ±10 µA

GS

= VGS, ID = 50 µA 3 3.75 4.5 V

DS

= 10 V, ID = 1.25 A 3.8 4.5 Ω

V

GS

1

50

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

g

C

oss eq.

fs

C

C

C

Forward transconductance V

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Equivalent output

(2)

capacitance

=15 V, ID = 1.25 A - 2.1 - S

DS

=25 V, f=1 MHz,

V

DS

VGS=0

V

=0, V

GS

DS

=0 to 640 V - 22 - pF

485

-

57
11

-

µA

µA

pF
pF
pF

t

d(on)

t

d(off)

Q
Q
Q

1. Pulsed: pulse duration=300 µs, duty cycle 1.5%

2. C
increases from 0 to 80% V

Turn-on delay time

t

Rise time

r

Off-voltage rise time

t

Fall time

f

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

DSS

V

DD

R

G

(see Figure 19)

V

DD

V

GS

Doc ID 9565 Rev 6 5/18

=400 V, ID= 1.25 A,

= 4.7 Ω, VGS=10 V

=640 V, ID = 2.5 A

=10 V

17
27

­36

40

19

-

3.2

10.8

when VDS

oss

ns
ns

­ns

ns

nC

-

nC
nC

Electrical characteristics STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z

Table 7. Source drain diode

Symbol Parameter Test conditions Min Typ. Max Unit

I

I

SDM

V

SD

Q

I

RRM

Q

I

RRM

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300 µs, duty cycle 1.5%

Source-drain current - 2.5 A

SD

(1)

Source-drain current (pulsed) - 10 A

(2)

Forward on voltage ISD= 2.5 A, VGS=0 - 1.6 V

= 2.5 A,

I

Reverse recovery time

t

rr

Reverse recovery charge

rr

Reverse recovery current

Reverse recovery time

t

rr

Reverse recovery charge

rr

Reverse recovery current

SD

di/dt = 100 A/µs,

=50 V

V

DD

(see Figure 21)

= 2.5 A,

I

SD

di/dt = 100 A/µs,

=50 V, Tj=150 °C

V

DD

(see Figure 21)

384

-

1600

8.4

474

-

2100

8.8

Table 8. Gate-source Zener diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

BV

GSO

1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.

Gate-source breakdown voltage Igs=± 1mA (open drain) 30 - - V

ns
µC

A

ns
µC

A

6/18 Doc ID 9565 Rev 6

STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Electrical characteristics

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for

Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP

TO-220, DPAK, IPAK

Figure 3. Thermal impedance for

TO-220, DPAK, IPAK

Figure 6. Output characteristics Figure 7. Transfer characteristics

Doc ID 9565 Rev 6 7/18

Electrical characteristics STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z

Figure 8. Transconductance Figure 9. Static drain-source on resistance

Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations

Figure 12. Normalized gate threshold voltage

vs temperature

Figure 13. Normalized on resistance vs

8/18 Doc ID 9565 Rev 6

temperature

STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Electrical characteristics

Figure 14. Source-drain diode forward

characteristics

Figure 16. Maximum avalanche

energy vs temperature

Figure 15. Normalized B

vs temperature

VDSS

Doc ID 9565 Rev 6 9/18

Test circuits STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z

3 Test circuits

Figure 17. Switching times test circuit for

PW

resistive load

VD

VGS

RG

RL

D.U.T.

2200

µF

3.3
µF

AM01468v1

V

DD

Figure 19. Test circuit for inductive load

G

25

Ω

switching and diode recovery times

A

D

D.U. T.

S

B

R

FAST
DIODE

G

A

A

L=100µH

B

B

D

G

S

3.3

µF

1000
µF

V

DD

Figure 18. Gate charge test circuit

V

i=20V=VGMAX

PW

2200
µF

1kΩ

12V

IG=CONST

2.7kΩ

47kΩ

47kΩ

100Ω

100nF

D.U.T.

AM01469v1

Figure 20. Unclamped inductive load test

circuit

L

VD

ID

Vi

D.U. T.

2200

µF

3.3
µF

1kΩ

VDD

V

VDD

G

Pw

AM01470v1

Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform

V(BR)DSS

VD

IDM

ID

VDD

VDD

AM01472v1

0

0

10%

tdon

ton

90%

toff

tr

10%

tdoff

VDS

90%

V

GS

10/18 Doc ID 9565 Rev 6

AM01471v1

tf

90%

10%

AM01473v1

STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.

®

packages, depending on their level of environmental compliance. ECOPACK®

Doc ID 9565 Rev 6 11/18

Package mechanical data STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z

TO-220 mechanical data

Dim

Min Typ Max Min Typ Max

mm inch

A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034

b1 1.14 1.70 0.044 0.066

c0.48 0.70 0.019 0.027
D 15.25 15.75 0.6 0.62

D1 1.27 0.050

E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F1.23 1.32 0.048 0.051

H1 6.20 6.60 0.244 0.256

J1 2.40 2.72 0.094 0.107

L13 14 0.511 0.551

L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L3028.90 1.137
∅P 3.75 3.85 0.147 0.151

Q2.65 2.95 0.104 0.116

12/18 Doc ID 9565 Rev 6

STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Package mechanical data

TO-220FP mechanical data

mm

Dim.

.xaM.pyT.niM

6.44.4A

7.25.2B

57.25.2D

7.054.0E

157.0F

07.151.11F

5.151.12F

2.559.4G

7.24.21G

4.0101H

612L

6.036.823L

6.018.94L

6.39.25L

4.619.516L

3.997L

2.33aiD

L7

E

A

B

L5

D

F1

F2

F

G

G1

L4

7012510_Rev_J

Dia

L6

H

L2

L3

Doc ID 9565 Rev 6 13/18

Package mechanical data STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z

TO-252 (DPAK) mechanical data

DIM.

A 2.20 2.40

A1 0.901.10

A2 0.03 0.23

b 0.64 0.90

b4 5.20 5.40

c 0.45 0.60

c2 0.48 0.60

D 6.00 6.20

D1 5.10

E 6.40 6.60

E1 4.70

e2.28

e1 4.40 4.60

H 9.35 10.10

L1

L1 2.80

L2 0.80

L4 0.60 1

R0.20

V2 0

min. typ max.

o

mm.

o

8

14/18 Doc ID 9565 Rev 6

0068772_G

STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Package mechanical data

TO-251 (IPAK) mechanical data

DIM.

A 2.20 2.40

A1 0.901.10

b 0.64 0.90

b2 0.95

b4 5.20 5.40

c 0.45 0.60

c2 0.48 0.60

D 6.00 6.20

E 6.40 6.60

e2.28

e1 4.40 4.60

H 16.10

L 9.00 9.40

(L1) 0.801.20

L2 0.80

V1

min. typ max.

mm.

10

o

0068771_H

Doc ID 9565 Rev 6 15/18

Packing mechanical data STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z

5 Packing mechanical data

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT

TAPE MECHANICAL DATA

DIM.

A0 6.8 7 0.267 0.275

B0 10.4 10.6 0.409 0.417

B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299

K0 2.55 2.75 0.100 0.108

P0 3.9 4.1 0.153 0.161

P1 7.9 8.1 0.311 0.319

P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

mm inch

MIN. MAX. MIN. MAX.

REEL MECHANICAL DATA

DIM.

A 330 12.992

B 1.5 0.059

C 12.8 13.2 0.504 0.520

D 20.2 0.795

G 16.4 18.4 0.645 0.724

N 50 1.968

T 22.4 0.881

BASE QTY BULK QTY

mm inch

MIN. MAX. MIN. MAX.

2500 2500

16/18 Doc ID 9565 Rev 6

STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Revision history

6 Revision history

Table 9. Revision history

Date Revision Changes

09-Sep-2004 3 Complete document

10-Aug-2006 4 New template, no content change

26-Feb-2009 5 Updated mechanical data

07-Sep-2009 6 V

ESD(G-S)

value has been corrected

Doc ID 9565 Rev 6 17/18

STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z

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18/18 Doc ID 9565 Rev 6