Page 1
STD3NB30
N - CHANNEL300V - 1.8Ω - 3.2A - DPAK
PowerMESH MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST D3N B3 0 300 V < 2Ω 3.2 A
■ TYPICALR
■ EXTREMELYHIGH dv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ VERYLOW INTRINSIC CAPACITANCES
■ GATECHARGE MINIMIZED
■ ADDSUFFIX ”T4” FORORDERING IN TAPE
DS(on)
=1.8 Ω
& REEL (2500 UNITS)
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
per area, exceptional avalanche
DS(on)
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■ SWITCHMODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt(
T
(•) Pulse width limited by safeoperating area (1)ISD≤3.2A, di/dt ≤ 200 A/µs, VDD≤ V
January 1999
Dra in- sour c e Vol t age (VGS= 0) 300 V
DS
Dra in- gate Volt age ( RGS=20kΩ) 300 V
DGR
Gat e-source Voltage ± 30 V
GS
I
Dra in Current (c ont in uous ) at Tc=25oC3.2A
D
I
Dra in Current (c ont in uous ) at Tc=100oC2A
D
(•) Dra in Current (puls ed ) 12.8 A
Tot al Dis s ipation at Tc=25oC40W
tot
Der ati ng Factor 0.32 W/
1) Peak Diode Recovery voltage sl ope 5.5 V/ns
St orage Tempe rat ure -65 t o 150
stg
T
Max. O perating Junction Temperatur e 150
j
,Tj≤T
(BR)DSS
JMAX
o
C
o
C
o
C
1/8
Page 2
STD3NB30
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Ther mal Res istance J unction-ca se Max
Ther mal Res istance J unction-am bie nt Max
Ther mal Res istance Cas e - sink Ty p
Maximum Lead Te mpe ra t ure For Soldering Pur p os e
l
Avalanche Current, R epetitive or Not-Repetitive
(pulse width limited by T
Single P ul s e Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
3.12
100
1.5
275
3.2 A
50 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 300 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Cur rent ( V
GS
Gat e- bod y L eak ag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
=± 30 V
GS
1
10
100 nA
±
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=V
Sta t ic Drain -s ource On
VGS=10V ID=1.6 A 1.8 2
GS
ID= 250 µA345V
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on )max
3.2 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capac i t ance
iss
Out put Capacitanc e
oss
Reverse Tr ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
=1.6 A 0.5 1.3 S
VDS=25V f=1MHz VGS= 0 260
55
7
µ
µA
Ω
pF
pF
pF
A
2/8
Page 3
STD3NB30
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Ti m e
VDD=150V ID=3.2A
R
=4.7
G
Ω
VGS=10V
9
9
12
12
(see test circuit, figure 3)
Q
Q
Q
Tot al Gat e Charge
g
Gat e- Source Charg e
gs
Gate-Drain Charge
gd
VDD= 240 V ID=3.2 A VGS=10V 12
7.5
3
16 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-volt age Rise Time
Fall T ime
f
Cross-over Time
c
VDD=240V ID= 3.2 A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
10
15
14
7
10
20
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
3416A
(pulsed)
(∗)ForwardOnVoltage ISD=3.2A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 3. 2 A di/dt = 100 A/µs
= 100 V Tj=150oC
V
DD
(see test circuit, figure 5)
180
800
Charge
Reverse Recovery
9
Current
ns
ns
nC
nC
ns
ns
ns
A
ns
nC
A
SafeOperating Area ThermalImpedance
3/8
Page 4
STD3NB30
OutputCharacteristics
Transconductance
TransferCharacteristics
Static Drain-sourceOn Resistance
Gate Charge vs Gate-sourceVoltage
4/8
CapacitanceVariations
Page 5
STD3NB30
NormalizedGate ThresholdVoltage vs
Temperature
Source-drainDiode ForwardCharacteristics
NormalizedOn Resistancevs Temperature
5/8
Page 6
STD3NB30
Fig. 1:
UnclampedInductiveLoad TestCircuit
Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad
Fig. 2:
UnclampedInductiveWaveform
Fig. 4: Gate Chargetest Circuit
Fig. 5:
Test Circuit For InductiveLoad Switching
And Diode Recovery Times
6/8
Page 7
TO-252 (DPAK) MECHANICAL DATA
STD3NB30
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039
H
A
E
C2
L2
B2
==
==
DETAIL”A”
D
2
13
L4
A1
C
A2
DETAIL”A”
B
G
==
0068772-B
7/8
Page 8
STD3NB30
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility forthe consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implicationor otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in thispublication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components inlife support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademarkof STMicroelectronics
1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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