Datasheet STD3N30L-1 Datasheet (SGS Thomson Microelectronics)

STD3N30L

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

■ TYPICAL R

DS(on)

= 1.15 Ω

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

o

C

■ APPLICATION ORIENTED

CHARACTERIZATION

■ THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)

■ SURFACE-MOUNTINGDPAK (TO-252)

POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)

APPLICATIONS

■ HIGH SPEED SWITCHING

■ UNINTERRUPTIBLE POWER SUPPLY (UPS)

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ INDUSTRIALACTUATORS

■ DC-DC & DC-AC CONVERTERS FOR

TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT

■ PARTICULARLY SUITABLE FOR

ELECTRONIC FLUORESCENT LAMP
BALLASTS

INTERNAL SCHEMATIC DIAGRAM

TYPE V

DSS

R

DS(on)

I

D

STD 3N30L 300 V < 1.4 Ω 3A

November 1996

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

V

DS

Drain - s ource Voltage (VGS= 0) 300 V

V

DGR

Drain- gate Voltage (RGS=20kΩ) 300 V

V

GS

Gate-source Voltage ± 15 V

I

D

Drain Current (continuous) at Tc=25oC3A

I

D

Drain Current (continuous) at Tc=100oC2A

I

DM

(•) Drain Current (pulsed) 12 A

P

tot

Total Di ssipation at Tc=25oC50W
Derat ing Factor 0.4 W/

o

C

T

stg

St or a ge Tem perature -65 to 150

o

C

T

j

Max. Operating Junction Temperature 150

o

C

(•) Pulsewidth limited bysafe operating area

1

3

2

IPAK

TO-251

(Suffix ”-1”)

1

3

DPAK

TO-252

(Suffix ”T4”)

1/10

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

l

Thermal Resistance Junction - cas e Max
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum L ead Temperat ur e For Soldering Purpos e

2.5

100

1.5

275

o

C/W

o

C/W

o

C/W

o

C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Valu e Uni t

I

AR

Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)

3A

E

AS

Single Pul se Avalanche Ener gy
(starti ng Tj=25oC, ID=IAR,VDD=50V)

20 mJ

E

AR

Repetitive Avalanc he Energ y
(pulse width limited by Tjmax, δ <1%)

5mJ

I

AR

Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(Tc= 100oC, pulse width limited by Tjmax, δ <1%)

2A

ELECTRICAL CHARACTERISTICS (T

case

=25oC unless otherwise specified)

OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

(BR)DSS

Drain - s ource
Break d own Volta ge

ID=250µAVGS= 0 300 V

I

DSS

Zer o Gate Volt age
Drain Current (V

GS

=0)

V

DS

=MaxRating

V

DS

= Max Rating x 0 .8 Tc=125oC

10

100

µA
µA

I

GSS

Gat e- body Leak age
Current (VDS=0)

VGS= ± 15 V ± 100 nA

ON (∗)

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

GS(th)

Gate Threshold Voltage VDS=VGSID=250µA11.62.5V

R

DS(on)

St at ic Drain-s our ce O n
Resistance

VGS=5V ID= 1.5 A 1.15 1.4 Ω

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

VGS=10V

3A

DYNAMIC

Symbol Parameter Test Condition s Min. Typ. Max. Unit

g

fs

(∗)Forward

Tr ansconductance

VDS>I

D(on)xRDS(on)maxID

=1.5A 1.5 3.5 S

C

iss

C

oss

C

rss

Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance

VDS=25V f=1MHz VGS=0 580

75
15

800
120

25

pF
pF
pF

STD3N30L

2/10

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on T im e
Rise Time

VDD=150V ID=1.5A
RG=50 Ω VGS=5V
(see test circuit, figure 3)

70

150

100
210

ns
ns

(di/dt)

on

Turn-on C urrent S lope VDD=240V ID=3A

RG=50 Ω VGS=5V
(see test circuit, figure 5)

115 A/µs

Q

g

Q

gs

Q

gd

Total Gate Charge
Gat e- Source Charge
Gate-Drain Charge

VDD= 240 V ID=3A VGS=5V 16

5
7

22 nC

nC
nC

SWITCHING OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

r(Voff)

t

f

t

c

Off -voltage R ise Time
Fall Time
Cross-over Time

VDD=240V ID=3A
RG=50 Ω VGS=5V
(see test circuit, figure 5)

50
40

100

70
60

140

ns
ns
ns

SOURCE DRAIN DIODE

Symbol Parameter Test Condition s Min. Typ. Max. Unit

I

SD

I

SDM

(•)

Source-drain Current
Source-drain Current
(pulsed)

3

12

A
A

V

SD

(∗) Forward On Volt age ISD=3A VGS=0 1.5 V

t

rr

Q

rr

I

RRM

Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current

ISD=3A di/dt=100A/µs
VDD= 200 V Tj=150oC
(see test circuit, figure 5)

300

1.5
10

ns

µC

A

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Area Thermal Impedance

STD3N30L

3/10

Derating Curve

Transfer Characteristics

Static Drain-source On Resistance

Output Characteristics

Transconductance

Gate Charge vs Gate-source Voltage

STD3N30L

4/10

Capacitance Variations Normalized Gate Threshold Voltage vs

Temperature

Normalized On Resistance vs Temperature Turn-on Current Slope

Cross-over TimeTurn-off Drain-source Voltage Slope

STD3N30L

5/10

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms

Switching SafeOperating Area Accidental Overload Area

Source-drain Diode Forward Characteristics

STD3N30L

6/10

Fig. 4: Gate Charge Test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

Fig. 3: Switching Times Test Circuits For
Resistive Load

STD3N30L

7/10

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023

C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

D

A

C2

C

L

A3

L2

L1

13

H

==

B3

B

B6

B2

E

G

A1

==

==

B5

2

TO-251 (IPAK) MECHANICAL DATA

0068771-E

STD3N30L

8/10

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023

C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039

A

C2

C

H

A1

A2

==

D

L2

L4

13

==

B

E

==

B2

G

2

DETAIL”A”

DETAIL”A”

TO-252 (DPAK) MECHANICAL DATA

0068772-B

STD3N30L

9/10

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such informationnor for any infringement of patents or other rightsof third parties which mayresults fromits use. No
licenseis granted by implication orotherwise under any patentor patent rights of SGS-THOMSONMicroelectronics. Specificationsmentioned
in thispublication are subject to change withoutnotice. Thispublication supersedes andreplacesall informationpreviously supplied.
SGS-THOMSONMicroelectronics products are not authorizedfor use ascriticalcomponents in lifesupportdevicesor systems withoutexpress
writtenapproval ofSGS-THOMSONMicroelectonics.

 1996 SGS-THOMSON Microelectronics -Printed in Italy- AllRightsReserved

SGS-THOMSONMicroelectronics GROUPOF COMPANIES

Australia- Brazil -Canada -China - France- Germany - HongKong- Italy - Japan- Korea- Malaysia - Malta- Morocco - The Netherlands -

Singapore - Spain - Sweden - Switzerland-Taiwan - Thailand- UnitedKingdom - U.S.A

.

STD3N30L

10/10