Page 1
STD3N25
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE V
DSS
R
DS(on)
I
D
STD3N25 250 V < 2 Ω 3A
■ TYPICAL R
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ APPLICATION ORIENTED
DS(on)
=1Ω
o
C
CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTINGDPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
■ HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ INDUSTRIALACTUATORS
■ DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
■ PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
3
2
1
IPAK
TO-251
(Suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
1
DPAK
TO-252
(Suffix ”T4”)
3
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
V
V
V
I
DM
P
T
(•) Pulsewidth limited bysafe operating area
January 1995
Drain - s ource Voltage (VGS= 0) 250 V
DS
Drain- gate Voltage (RGS=20kΩ) 250 V
DGR
Gate-source Voltage ± 20 V
GS
Drain Current (continuous) at Tc=25oC3A
I
D
Drain Current (continuous) at Tc=100oC1.9A
I
D
(•) Drain Current (pulsed) 12 A
Total D i ssipation at Tc=25oC45W
tot
Derat ing Factor 0.36 W/
St or a ge Tem perature -65 to 150
stg
Max. Operating Junctio n Temperatur e 150
T
j
o
o
o
C
C
C
1/10
Page 2
STD3N25
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Uni t
I
AR
E
E
I
AR
Thermal Res istance Junction -c as e Max
Thermal Resis tance Junction- ambient Max
Thermal Res istance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng Tj=25oC, ID=IAR,VDD=50V)
Repetitive Avalanc he Energ y
AR
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(Tc= 100oC, puls e width limited by Tjmax, δ <1%)
2.78
100
1.5
275
3A
20 mJ
5mJ
1.9 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
ID=250µAVGS= 0 250 V
Break d own Volta ge
I
DSS
I
GSS
Zer o Gate Voltage
Drain Current (V
GS
Gat e- body Leakage
=0)
=MaxRating
V
DS
V
= Max R ating x 0.8 Tc=125oC
DS
250
1000µAµA
VGS= ± 20 V ± 100 nA
Current (VDS=0)
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold V oltage VDS=VGSID=250µA234V
St at ic Drain-s our ce O n
Resistance
On St ate Dra in Current VDS>I
VGS=10V ID=1.5A
VGS=10V ID=1.5A Tc= 100oC
D(on)xRDS(on)max
12
4
3A
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=1.5A 1 1.8 S
VDS=25V f=1MHz VGS=0 370
60
10
500
100
20
Ω
Ω
pF
pF
pF
2/10
Page 3
STD3N25
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on Time
t
Rise Time
r
Turn-on C urrent Slope VDD=200V ID=3A
on
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SWITCHING OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
r(Voff)
t
Off -voltage R ise Time
t
Fall Time
f
Cross-over Time
c
SOURCE DRAIN DIODE
VDD=125V ID=1.5A
RG=50 Ω VGS=10V
15
45
(see test circuit, figure 3)
180 A/µs
RG=50 Ω VGS=10V
(see test circuit, figure 5)
VDD= 200 V ID=3A VGS=10V 16
5
6
VDD=200V ID=3A
RG=50 Ω VGS=10V
(see test circuit, figure 5)
15
15
35
25
65
25 nC
25
25
55
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
I
SDM
SD
Source-drain Current
(•)
Source-drain Current
3
12
(pulsed)
V
(∗) For w ar d On Volt age ISD=3A VGS=0 1.5 V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD=3A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)
180
1.2
Charge
I
RRM
Reverse Recovery
13
Current
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Area Thermal Impedance
A
A
ns
µC
A
3/10
Page 4
STD3N25
Derating Curve
Transfer Characteristics
Output Characteristics
Transconductance
Static Drain-source On Resistance
4/10
Gate Charge vs Gate-source Voltage
Page 5
Capacitance Variations Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature Turn-on Current Slope
STD3N25
Cross-over TimeTurn-off Drain-source Voltage Slope
5/10
Page 6
STD3N25
Switching SafeOperating Area Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms
6/10
Page 7
STD3N25
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge Test Circuit
7/10
Page 8
STD3N25
TO-251 (IPAK) MECHANICAL DATA
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
8/10
A
E
==
C2
L2
B2
==
H
C
A3
A1
B6
L
B
B5
G
==
D
B3
2
13
L1
0068771-E
Page 9
TO-252 (DPAK)MECHANICAL DATA
STD3N25
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039
H
A
E
==
C2
L2
B2
==
DETAIL”A”
D
2
13
L4
A1
C
A2
DETAIL”A”
B
G
==
0068772-B
9/10
Page 10
STD3N25
Information furnished isbelieved to be accurateand reliable. However, SGS-THOMSONMicroelectronics assumes noresponsability for the
consequences of use of suchinformation nor for any infringementof patents orother rights of third parties whichmay results from its use. No
license isgrantedby implicationor otherwiseunder anypatentor patentrights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publicationare subjectto change without notice.This publication supersedes and replacesall information previouslysupplied.
SGS-THOMSON Microelectronicsproducts arenotauthorizedfor useascriticalcomponents inlifesupportdevices orsystemswithout express
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSONMicroelectronics - All Rights Reserved
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Singapore -Spain - Sweden- Switzerland -Taiwan - Thailand - United Kingdom -U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
10/10
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