Datasheet STD38NF03L Datasheet (SGS Thomson Microelectronics)



N - CHANNEL 30V - 0.013 Ω - 38A TO-252

TYPE V

DSS

ST D38N F 03L 30 V < 0.019 Ω 38 A

■ TYPICALR

■ OPTIMIZEDFORHIGH SWTICHING

DS(on)

= 0.013 Ω

OPERATIONS

■ LOW THRESHOLDDRIVE

■ ADDSUFFIX ”T4” FORORDERING INTAPE

& REEL

R

DS(o n)

I

D

STD38NF03L

STripFET POWER MOSFET

PRELIMINARY DATA

3

1

DESCRIPTION

This Power MOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-

DPAK

TO-252

(Suffix ”T4”)

stor shows extremelyhigh packing density forlow
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re­markablemanufacturingreproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■ HIGHCURRENT, HIGH SPEEDSWITCHING

■ MOTORCONTROL, AUDIOAMPLIFIERS

■ DC-DC& DC-AC CONVERTERS

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t

V

V

V

I

D

I

DM

P

T

(•) Pulse width limitedby safe operating area (*)Value limitedby the package

Dra in- sour c e Volta ge (VGS=0) 30 V

DS

Drain- gate Voltage (RGS=20kΩ)30V

DGR

Gate-s ource Voltage ± 20 V

GS

(*) Dra in Cu rr ent (conti nuous) at Tc=25oC38A

Dra in Cu rr ent (conti nuous) at Tc= 100oC27A

I

D

(•) D ra in Cu rr ent (pulse d) 152 A

Tot al Dissipatio n at Tc=25oC45W

tot

Der ati ng Fa c t or 0.3 W/
St orage Tempe rat ure -65 to 175

stg

Max. Operating Jun ct ion Temperatur e 175

T

j

o

C

o

C

o

C

March 2000

1/6

STD38NF03L

THERMAL DATA

R

thj-pcb

R

thj-amb

R

thj-sink

T

Ther mal Resistanc e Junct ion-PC Board Max
Ther mal Resistanc e Junct ion-ambie nt Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Temper a tu r e For Soldering Purpose

l

3.33

62.5

1.5

300

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. U nit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 30 V

Break dow n Vo lt age

I

DSS

I

GSS

Zero Gate Volta ge
Drain Curre nt (V

GS

Gat e- bod y Leakag e
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc= 125oC

V

DS

V

= ± 20 V ± 100 nA

GS

1

10

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. U nit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID= 250 µA11.72.5V
Sta t ic Drain-s our c e On

Resistance

VGS=10V ID=19A

=4.5V ID=19A

V

GS

On State Drain Current VDS>I

D(on)xRDS(on)max

0.013

0.016

38 A

0.019

0.023ΩΩ

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. U nit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input Capaci t ance

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on)maxID

=19A 28 S

VDS=20V f=1MHz VGS= 0 V 1450

390
155

µ
µA

pF
pF
pF

A

2/6

STD38NF03L

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. U nit

t

d(on)

Tur n-on Delay T ime
Rise Time

t

r

VDD=15V ID= 27.5 A
R

=4.7

G

Ω

VGS=4.5V

25

280

(Resis t iv e Load, see fig. 3)

Q
Q
Q

Tot al Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

VDD=24V ID=55A VGS=4.5V 27

11
12

36 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. U nit

t

d(off)

Tur n-of f Dela y Tim e

t

Fall T ime

f

VDD=15V ID= 27.5 A

=4.7 Ω VGS=4.5V

R

G

60

240

(Resis t iv e Load, see fig. 3)

t

r(Voff)

t

t

Off-voltage Rise Time
Fall T ime

f

Cross-over Time

c

V
R

=24V ID=55A

CLAM P

=4.7 Ω VGS=4.5V

G

(Indu ct iv e Load, see fig. 5)

140
200
350

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. U nit

I

V

I

SDM

SD

Q

I

RRM

SD

t

Source-drain Current

(•)

Source-drain Current

38

152

(pulsed)

(∗)ForwardOnVoltage ISD=38A VGS=0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 55 A di / dt = 100 A/µs

=15V Tj=150oC

V

DD

(see test circuit, fig. 5)

45

52
Charge
Reverse Recovery

2.3

Current

ns
ns

nC
nC

ns
ns

ns
ns
ns

A
A

ns

nC

A

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
(•) Pulse width limited by safe operatingarea

3/6

STD38NF03L

Fig. 1:

UnclampedInductiveLoad Test Circuit

Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad

Fig. 2:

UnclampedInductive Waveform

Fig. 4: Gate Chargetest Circuit

Fig. 5:

Test CircuitFor InductiveLoad Switching

And Diode Recovery Times

4/6

TO-252 (DPAK) MECHANICAL DATA

STD38NF03L

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397

L2 0.8 0.031
L4 0.6 1 0.023 0.039

H

A

E

C2

L2

B2

==

==

DETAIL”A”

D

2

13

L4

A1

C

A2

DETAIL”A”

B

G

==

0068772-B

5/6

STD38NF03L

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