Datasheet STD35NF06L Datasheet (SGS Thomson Microelectronics)

STD35NF06L

N-CHANNEL 60V - 0.014Ω - 35A DPAK

STripFET™II MOSFET

PRELIMINARY DATA

TYPE V

DSS

STD35NF06L 60 V < 0.017

■ TYPICAL R

■ EXTREMELY HIGH dv /d t CAPABILITY

■ 100% AVALANCHE TESTED

■ NEW HIGH VOLTAGE BENCHMARK

■ GATE CHARGE MINIMIZED

(on) = 0.014 Ω

DS

R

DS(on)

I

D

Ω

35 A

DESCRIPTION

This Power Mosfet is the latest development of ST-

Microelectronics unique “Single Feature Size™”
strip-based process. The res ulting transistor sh ows
extremely high packing density for low on-resis­tance, rugged avalance characteristics and less crit­ical alignment steps therefore a remarkable
manufacturing reproducibility.

APPLICATIONS

■ SOLENOID AND RELAY DRIVERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ DC-AC CONVERTERS

■ AUTOMOTIVE ENVIRONMENT

3

1

DPAK

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt (1) Peak Diode Recovery voltage slope 5 V/ns

T

stg

T

j

(•)Pu l se width limited by safe operating area

March 2001

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

60 V
60 V

Gate- source Voltage ± 15 V

Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C

(●)

Drain Current (pulsed) 140 A
Total Dissipation at TC = 25°C

35 A

24.5 A

60 W

Derating Factor 0.4 W/°C

Storage Temperature –65 to 175 °C
Max. Operating Junction Temperature 175 °C

(1)ISD ≤35A, di/dt ≤100A/µs, VDD ≤ V

(BR)DSS

, Tj ≤ T

JMAX.

1/6

STD35NF06L

THERMA L D ATA

Rthj-case Thermal Resistance Junction-case Max 2.5 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 275 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source

= 25 °C, ID = IAR, VDD = 50 V)

j

ID = 250 µA, VGS = 0 60 V

17.5 A

175 mJ

Breakdown Voltage
Zero Gate Voltage

Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

V

= Max Rating

DS

V

= Max Rating, TC = 125 °C

DS

V

= ± 15V ±100 nA

GS

1µA

10 µA

ON

(1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

Resistance

V

= VGS, ID = 250µA

DS

VGS = 10V, ID = 17.5 A

= 4.5V, ID = 17.5 A

V

GS

1 2.5 V

0.014 0.017

0.016 0.020

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS > I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 305 pF
Reverse Transfer

Capacitance

I

= 17.5 A

D

V

DS

D(on)

x R

DS(on)max,

= 25V, f = 1 MHz, VGS = 0

18 S

1700 pF

105 pF

Ω
Ω

2/6

STD35NF06L

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time 100 ns
Total Gate Charge

Gate-Source Charge 5 nC
Gate-Drain Charge 10 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

d(off)

t

f

t

f

t

c

Turn-off-Delay Time
Fall Time

Off-voltage Rise Time
Fall Time
Cross-over Time

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pu l se duration = 300 µs, duty c yc l e 1.5 %.

2. Pulse width li mited by safe operating area.

Source-drain Current 35 A

(2)

Source-drain Current (pulsed) 140 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge 200 nC
Reverse Recovery Current 5 A

= 30 V, ID = 27.5 A

DD

RG= 4.7Ω VGS = 4.5 V
(see test circuit, Figure 3)

V

= 48V, ID = 55 A,

DD

VGS = 4.5V

VDD = 30V, ID = 27.5A,
RG=4.7Ω, V

GS

= 4.5V

(see test circuit, Figure 3)

GS

=55A

D

= 4.5V

Vclamp =48V, I
RG=4.7Ω, V
(see test circuit, Figure 5)

ISD = 35 A, VGS = 0
I

= 35 A, di/dt = 100A/µs

SD

VDD = 30V, Tj = 150°C
(see test circuit, Figure 5)

20 ns

25 33 nC

40
20

40
35
50

1.5 V

80 ns

ns
ns

ns
ns
ns

3/6

STD35NF06L

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

4/6

TO-252 (DPAK) MECHANICAL DATA

STD35NF06L

DIM.

A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0

MIN. TYP. MAX. MIN. TYP. MAX.

o

mm inch

o

8

o

0

o

0

P032P_B

5/6

STD35NF06L

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