Datasheet STD30NF03L Datasheet (SGS Thomson Microelectronics)



STD30NF03L

N - CHANNEL 30V - 0.020 Ω - 30A DPAK

STripFET POWER MOSFET

TYPE V

DSS

R

DS(o n)

I

D

ST D30N F 03L 30 V < 0.025 Ω 30 A

■ TYPICALR

■ LOW THRESHOLDDRIVE

■ ADDSUFFIX ”T4” FORORDERING INTAPE

DS(on)

= 0.020 Ω

& REEL

DESCRIPTION

This PowerMOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.

APPLICATIONS

■ HIGHCURRENT, HIGH SPEED SWITCHING

■ SOLENOIDAND RELAYDRIVERS

■ MOTORCONTROL, AUDIO AMPLIFIERS

■ DC-DC& DC-ACCONVERTERS

3

1

DPAK

TO-252

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t

V

V

V

I

D

I

DM

P

E

AS

T

(••) Pulse width limitedby safe operating area (1) starting Tj
(•)Currentlimitedby the package

October 1999

Dra in- sour c e Vol ta ge (VGS=0) 30 V

DS

Drain- gate Voltage (RGS=20kΩ)30V

DGR

Gate-s ource Volt age ± 20 V

GS

(•) Dra in Current (conti nuous ) at Tc=25oC30A

Dra in Current (conti nuous) at Tc= 100oC19A

I

D

(

Dra in Current (pulsed) 120 A

••)

Tot al Dissi pat io n at Tc=25oC40W

tot

Der ati ng Fact or 0.27 W/

o

C

(1) Single Pulse Avalanche Energy 100 m/ J

St orage Tem pe ra t ure -65 to 175

stg

Max. Operat ing Junct ion Tempera t ure 175

T

j

=25oC,ID=15A, VDD= 15V

o

C

o

C

1/8

STD30NF03L

THERMAL DATA

R

thj-pcb

R

thj-amb

R

thj-sink

T

Ther mal Resistanc e Junct ion-PC Boa rd Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Te m perature F or S o lder ing Purpose

l

3.75
100

1.5

275

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 30 V

Break dow n Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gat e- bod y Leakage
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc= 125oC

V

DS

V

= ± 20 V ± 100 nA

GS

1

10

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Volt age VDS=VGSID= 250 µ A11.72.5V
Sta t ic Drain-sour ce On

Resistance

VGS=10V ID=15A

=4.5V ID=15A

V

GS

On State Drain Current VDS>I

D(on)xRDS(on )max

0.020

0.028

30 A

0.025

0.035ΩΩ

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on )maxID

=15A 13 S

VDS=25V f=1MHz VGS= 0 V 830

230

92

µ
µA

pF
pF
pF

A

2/8

STD30NF03L

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Tur n-on Delay Time
Rise Time

t

r

VDD=15V ID=20A
R

=4.7

G

Ω

VGS=4.5V

35

205

(Resis t iv e Load, see fig. 3)

Q
Q
Q

Tot al Gate Charge

g

Gat e- Source Char g e

gs

Gate-Drain Charge

gd

VDD=24V ID=30A VGS=5V 18

7
8

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Tur n-of f Delay Time

t

Fall T ime

f

VDD=15V ID=20A

=4.7 Ω VGS=4.5V

R

G

90

240

(Resis t iv e Load, see fig. 3)

SOURCEDRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

V

I

SDM

SD

Q

I

RRM

SD

t

Source-drain Current

(•)

Source-drain Current

30

120

(pulsed)

(∗)ForwardOnVoltage ISD=30A VGS=0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 40 A di/dt = 100 A/µs

=15V Tj=150oC

V

DD

(see test circuit, fig. 5)

65

72
Charge
Reverse Recovery

2

Current

ns
ns

nC
nC
nC

ns
ns

A
A

ns

nC

A

(∗) Pulsed: Pulse duration= 300µs, dutycycle 1.5 %
(•) Pulse width limited by safeoperating area

SafeOperating Area ThermalImpedance

3/8

STD30NF03L

OutputCharacteristics

Transconductance

TransferCharacteristics

Static Drain-sourceOn Resistance

Gate Charge vs Gate-sourceVoltage

4/8

CapacitanceVariations

STD30NF03L

NormalizedGate ThresholdVoltage vs
Temperature

Source-drainDiode Forward Characteristics

NormalizedOn Resistancevs Temperature

5/8

STD30NF03L

Fig. 1: UnclampedInductiveLoad Test Circuit

Fig. 3: SwitchingTimesTest CircuitsFor
ResistiveLoad

Fig. 2:UnclampedInductive Waveform

Fig. 4: Gate Charge test Circuit

Fig. 5: TestCircuit ForInductiveLoad Switching
And Diode Recovery Times

6/8

TO-252 (DPAK) MECHANICALDATA

STD30NF03L

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039

H

A

E

C2

L2

B2

==

==

DETAIL”A”

D

2

13

L4

A1

C

A2

DETAIL”A”

B

G

==

0068772-B

7/8

STD30NF03L

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of use of such information nor for any infringement of patents or other rights of third parties which may resultfrom its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publicationare
subjecttochange without notice.Thispublication supersedesand replacesall information previouslysupplied.STMicroelectronics products
are not authorizedfor useas critical components in lifesupport devices or systems without express written approval of STMicroelectronics.

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