Datasheet STD30NE06L Datasheet (SGS Thomson Microelectronics)



STD30NE06L

N - CHANNEL 60V - 0.025 Ω - 30A TO-252

STripFET POWER MOSFET

TYPE V

DSS

R

DS(o n)

I

D

ST D30N E 06L 60 V < 0 . 03 Ω 30 A

■ TYPICALR

■ EXCEPTIONALdv/dtCAPABILITY

■ 100%AVALANCHETESTED

■ LOW GATE CHARGE 100

■ APPLICATIONORIENTED

DS(on)

= 0.025 Ω

o

C

CHARACTERIZATION

■ ADDSUFFIX ”T4” FORORDERING INTAPE

& REEL

DESCRIPTION

This PowerMOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor showsextremelyhigh packing densityfor low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re­markablemanufacturingreproducibility.

APPLICATIONS

■ HIGHCURRENT, HIGH SPEED SWITCHING

■ SOLENOIDAND RELAYDRIVERS

■ MOTORCONTROL, AUDIO AMPLIFIERS

■ DC-DC& DC-ACCONVERTERS

3

1

DPAK

TO-252

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t

V

V

V

I

DM

P

dv/dt (

T

(•) Pulse width limitedby safe operatingarea (1)ISD≤30A, di/dt ≤ 300 A/µs, VDD≤ V

May 1999

Dra in- sour c e Volta ge (VGS=0) 60 V

DS

Drain- gate Voltage (RGS=20kΩ)60V

DGR

Gate-s ource Volt age ± 20 V

GS

Dra in Cu rr ent (continuous) at Tc=25oC30A

I

D

Dra in Cu rr ent (continuous) at Tc= 100oC21A

I

D

(•) D ra in Cu rr ent (pulsed) 120 A

Tot al Dissi pat io n at Tc=25oC55W

tot

Der ati ng Fa c t or 0.37 W/

1) P eak Diode Rec o ve ry volt a ge slope 7 V/ ns

St orage Tem pe ra t ure -65 to 175

stg

Max. Operating Junction Tem pe ra t ure 175

T

j

,Tj≤T

(BR)DSS

JMAX

o

C

o

C

o

C

1/8

STD30NE06L

THERMAL DATA

R

thj-pcb

R

thj-amb

R

thj-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Valu e Unit

I

AR

E

Ther mal Resistanc e Junct ion-PC Boa rd Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Temperatur e For Soldering Pu rpose

l

Avalanche Current, Repe titive or Not-Repetitive
(pulse width limited by T

Single Pul se Avalanche Ener gy

AS

(starting T

=25oC, ID=IAR,VDD=25V)

j

max)

j

2.72
100

1.5

275

30 A

100 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. U nit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 60 V

Break dow n Vo lt age

I

DSS

I

GSS

Zero Gate Voltage
Drain Curre nt (V

GS

Gat e- bod y Leakag e
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc= 125oC

V

DS

V

=± 20 V

GS

1

10

100 nA

±

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. U nit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Volt age VDS=VGSID= 250 µ A11.72.5V
Sta t ic Drain-s our c e On

Resistance

VGS=10V ID=15A

=5V ID=15A

V

GS

On State Drain Current VDS>I

D(on)xRDS(on )max

0.022

0.025

30 A

0.028

0.030ΩΩ

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. U nit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input Capaci t ance

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on )maxID

= 1 5 A 15 25 S

VDS=25V f=1MHz VGS= 0 V 2370

350

90

µ
µA

pF
pF
pF

A

2/8

STD30NE06L

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. U nit

t

d(on)

Tur n-on Delay Time
Rise Time

t

r

VDD=30V ID=15A
R

=4.7

G

Ω

VGS=5V

27

10050135

(Resis t iv e Load, see fig. 3)

Q
Q
Q

Tot al Gate Charge

g

Gat e- Source Char g e

gs

Gate-Drain Charge

gd

VDD=30V ID=30A VGS=5V 31

13

13.5

41 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. U nit

t

r(Voff)

t

t

Off-volt age Rise Time
Fall T ime

f

Cross-over Tim e

c

VDD=48V ID=30A

=4.7 Ω VGS=5V

R

G

(Indu ct iv e Load, see fig . 5)

20
45
72

27
60

100

SOURCEDRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. U nit

I

V

I

SDM

SD

Q

I

RRM

SD

t

Source-drain Current

(•)

Source-drain Current

30

120

(pulsed)

(∗)ForwardOnVoltage ISD=30A VGS=0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 30 A di/dt = 100 A/µs

=30V Tj=150oC

V

DD

(see test circuit, fig. 5)

55

0.1
Charge
Reverse Recovery

3.5
Current

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µ

A

C

(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area

SafeOperating Area ThermalImpedance

3/8

STD30NE06L

OutputCharacteristics

Transconductance

TransferCharacteristics

Static Drain-sourceOn Resistance

Gate Charge vs Gate-sourceVoltage

4/8

CapacitanceVariations

STD30NE06L

NormalizedGate ThresholdVoltage vs
Temperature

Source-drainDiode Forward Characteristics

NormalizedOn Resistancevs Temperature

5/8

STD30NE06L

Fig. 1:

UnclampedInductiveLoad TestCircuit

Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad

Fig. 2:

UnclampedInductiveWaveform

Fig. 4: Gate Charge test Circuit

Fig. 5:

Test Circuit For InductiveLoad Switching

And Diode Recovery Times

6/8

TO-252 (DPAK) MECHANICALDATA

STD30NE06L

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397

L2 0.8 0.031
L4 0.6 1 0.023 0.039

H

A

E

C2

L2

B2

==

==

DETAIL”A”

D

2

13

L4

A1

C

A2

DETAIL”A”

B

G

==

0068772-B

7/8

STD30NE06L

Information furnished is believed tobeaccurateand reliable. However, STMicroelectronics assumesno responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may resultfrom its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publicationare
subjecttochange without notice.Thispublication supersedesand replacesall information previouslysupplied.STMicroelectronics products
are not authorizedfor useas critical components in lifesupport devices or systems without express written approval of STMicroelectronics.

The STlogo is a trademark of STMicroelectronics

 1999 STMicroelectronics – Printed in Italy – All Rights Reserved

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China -France - Germany - Italy- Japan- Korea- Malaysia - Malta - Mexico - Morocco - The Netherlands -

8/8

Singapore - Spain - Sweden - Switzerland - Taiwan- Thailand - UnitedKingdom - U.S.A.

http://www.st.com

.