Datasheet STD2NM60-1, STD2NM60 Datasheet (SGS Thomson Microelectronics)

1/10September 2002

STD2NM60

STD2NM60-1

N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK

Zener-Protected MDmesh™Power MOSFET

(1)ISD<2A, di/dt<400A/µs, VDD<V

(BR)DSS

, TJ<T

JMAX

■ TYPICAL R

DS

(on) = 2.8 Ω

■ HIGH dv/dt AND AVALANCHE CAPABILITIES

■ 100% AVALANCHE TESTED

■ LOW INPUT CAPACITANCE AND GATE

CHARGE

■ LOW GATE INPUT RESISTAN CE

■ TIGHT PROCESS CONTROL AND HIGH

MANUFACTORING YIELDS

DESCRIPTION

The MDmesh™

is a new revolutionary MOSFET

technology that associates the Multiple Drain pro­cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.

APPLICATIONS

The MDmesh™ family is very suitable for increase
the power density of high voltage converters allow­ing system miniaturization and higher efficiencies.

ABSOLUTE MAXIMUM RATINGS

(•)Pu l se width limited by safe operating area

TYPE V

DSS

R

DS(on)

I

D

STD2NM60
STD2NM60- 1

600V
600V

< 3.2 Ω
< 3.2 Ω

2 A
2 A

Symbol Parameter Value Unit

V

DS

Drain-source Voltage (VGS = 0)

600 V

V

DGR

Drain-gate Voltage (RGS = 20 kΩ)

600 V

V

GS

Gate- source Voltage ±30 V

I

D

Drain Current (continuous) at TC = 25°C

2A

I

D

Drain Current (continuous) at TC = 100°C

1.26 A

I

DM

(●)

Drain Current (pulsed) 8 A

P

TOT

Total Dissipation at TC = 25°C

46 W

Derating Factor 0.37 W/°C

V

ESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5KΩ) 1kV

dv/dt(1) Peak Diode Recovery voltage slope 15 V/ns

T

stg

Storage Temperature –65 to 150 °C

T

j

Max. Operating Junction Temperature 150 °C

1

3

DPAK

TO-252

3

2

1

IPAK

TO-251

INTERNAL SCHEMATIC DIAGRAM

STD2NM60/STD2NM60-1

2/10

THERMA L D ATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (T

CASE

= 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON

(1)

DYNAMIC

Note: 1. Pulsed: Pu l se duration = 300 µs, duty c ycle 1.5 %.

Rthj-case Thermal Resistance Junction-case Max 2.73 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose 300 °C

Symbol Parameter Max Value Unit

I

AR

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

j

max)

0.5 A

E

AS

Single Pulse Avalanche Energy
(starting T

j

= 25 °C, ID = IAR, VDD = 50 V)

250 mJ

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source
Breakdown Voltage

ID = 1 mA, VGS = 0 600 V

I

DSS

Zero Gate Voltage
Drain Current (V

GS

= 0)

V

DS

= Max Rating

1µA

V

DS

= Max Rating, TC = 125 °C

10 µA

I

GSS

Gate-body Leakage
Current (V

DS

= 0)

V

GS

= ± 20V ± 5 µA

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold Voltage

V

DS

= VGS, ID = 250µA

345V

R

DS(on)

Static Drain-source On
Resistance

VGS = 10V, ID = 1 A

2.8 3.2 Ω

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

fs

(1) Forward Transconductance VDS > I

D(on)

x R

DS(on)max,

I

D

=2 A

1.4
S

C

iss

Input Capacitance

V

DS

= 25V, f = 1 MHz, VGS = 0

160 pF

C

oss

Output Capacitance 67 pF

C

rss

Reverse Transfer
Capacitance

4pF

R

G

Gate Input Resistance f=1 MHz Gate DC Bias = 0

Test Signal Level = 20mV
Open Drain

3.5 Ω

3/10

STD2NM60/STD2NM60-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pu l se duration = 300 µs, duty c ycle 1.5 %.

2. Pulse width li mited by safe operating area.

GATE-SOURCE ZENER DIODE

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specif ically been designed to enhanc e not only t he dev ice’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is approp riate to achieve an efficient and
cost-effective intervention to protect the device’s int egrity. These integrated Zener diode s th us av oi d the
usage of external components.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Delay Time
Rise Time

VDD = 300V, ID = 1 A
RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)

13

8

ns
ns

Q

g

Total Gate Charge

V

DD

= 480V, ID = 2 A,

VGS = 10V

6 8.4 nC

Q

gs

Gate-Source Charge 1.8 nC

Q

gd

Gate-Drain Charge 3.3 nC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

Off-voltage Rise Time

V

DD

= 480 V, ID = 2 A,

RG=4.7Ω, V

GS

= 10V

(see test circuit, Figure 5)

12 ns

t

f

Fall Time 25 ns

t

c

Cross-over Time 30 ns

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

Source-drain Current 2 A

I

SDM

(2)

Source-drain Current (pulsed) 8 A

VSD (1)

Forward On Voltage

ISD = 2 A, VGS = 0

1.5 V

t

rr

Q

rr

I

RRM

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

I

SD

= 2 A, di/dt = 100A/µs,
VDD = 100 V, Tj = 25°C
(see test circuit, Figure 5)

516
516

2

ns

nC

A

t

rr

Q

rr

I

RRM

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

I

SD

= 2 A, di/dt = 100A/µs,
V

DD

= 100 V, Tj = 150°C

(see test circuit, Figure 5)

808
890

2.2

ns

nC

A

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown
Voltage

Igs=± 1mA (Open Drain) 30 V

STD2NM60/STD2NM60-1

4/10

Output Characteristics

Safe Operating Area

Transfer Characteristics

Transconductanc e

Static Drain-source On Resistance

Ther m al Impeda n c e

5/10

STD2NM60/STD2NM60-1

Normalized BVDSS vs. Temperature

Normalized On Resistance vs Temperatur eNormalized Gate Thereshold Voltage vs Temp.

Capacitance Variations

Gate Charge vs Gate-source Voltage

Source-drain Diode Forward Characteristics

STD2NM60/STD2NM60-1

6/10

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

7/10

STD2NM60/STD2NM60-1

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0

o

8

o

0

o

0

o

P032P_B

TO-252 (DPAK) MECHANICAL DATA

STD2NM60/STD2NM60-1

8/10

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

A

C2

C

A3

H

A1

D

L

L2

L1

1 3

= =

B3

B

B6

B2

E

G

= =

= =

B5

2

TO-251 (IPAK) MECHANICAL DAT A

0068771-E

9/10

STD2NM60/STD2NM60-1

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

DPAK FOOTPRINT

* on sales type

DIM.

mm inch

MIN. MAX. MIN. MAX.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881

BASE QTY BULK QTY

2500 2500

REEL MECHANICAL DATA

DIM.

mm inch

MIN. MAX. MIN. MAX.

A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476

D 1. 5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

TAPE MECHANICAL DATA

All dimensions

are in millimeters

All dimensions are in millimeters

STD2NM60/STD2NM60-1

10/10

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