Datasheet STD2NC70Z Datasheet (SGS Thomson Microelectronics)

STD2NC70Z

STD2NC70Z-1

N-CHANNEL 700V - 4.1Ω - 2.3A DPAK/IPAK

Zener-Protected PowerMESH™III MOSFET

TYPE V

STD2NC70Z
STD2NC70Z -1

■ TYPICAL R

■ EXTREMELY HIGH dv/dt AND CAPABILITY

DS

DSS

700V
700V

(on) = 4.1Ω

R

DS(on)

< 4.7
< 4.7

I

D

Ω
Ω

2.3 A

2.3 A

GATE TO - SOURCE ZENER DIODES

■ 100% AVALANCHE TESTED

■ VERY LOW GATE INPUT RESISTANCE

■ GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ P ow er
MOSFETs for very high voltage exhibits unsur­passed on-resistance per unit area while integrat­ing back-to-back Zener diodes betw een gate and
source. Such arrangement gives extra ESD capa­bility with higher ruggedness performance as re­quested by a large variety of single-switch
applications.

APPLICATIONS

■ SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

■ WELDING EQUIPMENT

3

1

DPAK

(Add Suffix “T4” for Tape & Reel)

3

2

1

IPAK

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

I

GS

V

ESD(G-S)

dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns

T

stg

T

j

(•)Pu l se width limite d by safe operati ng area

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

700 V
700 V

Gate- source Voltage ± 25 V

Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C

(●)

Drain Current (pulsed) 9.2 A
Total Dissipation at TC = 25°C

2.3 A

1.45 A

55 W
Derating Factor 0.44 W/°C
Gate-source Current (DC) ±50 mA
Gate source ESD(HBM-C=100pF, R=1.5K

Ω)

1.5 KV

Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

(1)ISD ≤2.3A, di/dt ≤100A/µs, VDD ≤ V

(BR)DSS

, Tj ≤ T

JMAX

1/10April 2001

STD2NC70Z/STD2NC70Z-1

THERMA L D ATA

Rthj-case Thermal Resistance Junction-case Max 2.27 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

Rthc-sink Thermal Resistance Case-sink Typ 0.1 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

∆

BV

DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 300 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source

= 25 °C, ID = IAR, VDD = 50 V)

j

ID = 250 µA, VGS = 0 700 V

2.3 A

165 mJ

Breakdown Voltage

/∆TJBreakdown Voltage Temp.

ID = 1 mA, VGS = 0 0.8 V/°C

Coefficient
Zero Gate Voltage

Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

V

= Max Rating

DS

V

= Max Rating, TC = 125 °C

DS

V

= ±20V ±10 µA

GS

1µA

50 µA

ON

(1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

= VGS, ID = 250µA

DS

VGS = 10V, ID = 1.25 A

345V

4.1 4.7

Resistance

I

D(on)

On State Drain Current VDS > I

V

GS

D(on)

=10V

x R

DS(on)max,

2.3 A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS > I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 50 pF
Reverse Transfer

Capacitance

I

= 1.25A

D

V

DS

D(on)

x R

DS(on)max,

= 25V, f = 1 MHz, VGS = 0

2S

530 pF

7pF

Ω

2/10

STD2NC70Z/STD2NC70Z-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time 11 ns
Total Gate Charge

Gate-Source Charge 4 nC
Gate-Drain Charge 7 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t
t

f

c

Off-voltage Rise Time
Fall Time 33 ns
Cross-over Time 40 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Source-drain Current 2.3 A

(2)

Source-drain Current (pulsed) 9.2 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge 0.6 µC
Reverse Recovery Current 7.5 A

= 350 V, ID = 1.25 A

DD

RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)

V

= 560V, ID = 2.5A,

DD

VGS = 10V

V

= 560V, ID = 2.5 A,

DD

RG=4.7Ω, V

GS

= 10V

(see test circuit, Figure 5)

ISD = 2.3 A, VGS = 0
I

= 2.5 A, di/dt = 100A/µs,

SD

VDD = 27V, Tj = 150°C
(see test circuit, Figure 5)

14 ns

17 24 nC

16 ns

1.6 V

175 ns

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 25 V

Voltage

α

T Voltage Thermal Coefficient T=25°C Note(3) 1.3

I

Rz Dynamic Resistance

Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1. 5 %.

2. Pulse width li mited by safe operating area .

3.∆V

= αT (25°-T) BV

BV

GSO

(25°)

= 50 mA, VGS = 0

D

90

10

-4

/°C

Ω

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.

3/10

STD2NC70Z/STD2NC70Z-1

Safe Operating Area

Thermal Impedance

Transfer CharacteristicsOutput Characteristics

Transconductance

4/10

Static Drain-source On Resistance

STD2NC70Z/STD2NC70Z-1

Gate Charge vs Gate-source Voltage

Normalized Gate Threshold Voltage vs Temp.

Capacitance Variations

Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

5/10

STD2NC70Z/STD2NC70Z-1

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/10

TO-252 (DPAK) MECHANICAL DATA

STD2NC70Z/STD2NC70Z-1

DIM.

A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0

MIN. TYP. MAX. MIN. TYP. MAX.

o

mm inch

o

8

o

0

o

0

P032P_B

7/10

TO-251 (IPAK) MECHANICAL DAT A

STD2NC70Z/STD2NC70Z-1

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

H

A

C2

L2

E

B2

= =

= =

D

B3

2

1 3

L1

A1

L

B6

C

A3

B

B5

G

= =

0068771-E

8/10

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT (suffix ”T4”)*

STD2NC70Z/STD2NC70Z-1

TUBE SHIPMENT (no suffix)*

All dimensions

are in millimeters

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

* on sales type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

2500 2500

9/10

STD2NC70Z/STD2NC70Z-1

10/10

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