Page 1
STD2NC40-1
3
N-CHANNEL 400V - 4.7Ω - 1.5A IPAK
PowerMesh™II MOSFET
TYPE V
STD2NC40-1 400V <5.5
■ TYPICAL R
■ EXTREMELY HIGH dv/d t C APABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
DS
DSS
(on) = 4.7Ω
R
DS(on)
I
D
Ω
1.5A
DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
™II is the evolution of the first
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lea ding edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
■ SWITH MODE LOW POWER SUPPLIES
(SMPS)
■ CFL
2
1
IPAK
(SUFFIX“-1”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt Peak Diode Recovery voltage slope 3.5 V/ns
T
stg
T
j
(•)Pu l se width limite d by safe operat i ng area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 40 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(■)
Drain Current (pulsed) 6 A
Total Dissipation at TC = 25°C
Derating Factor 0.24 W/°C
Storage Temperature –60 to 150 °C
Max. Operating Junction Temperature 150 °C
(1)ISD ≤1.5A, di/ dt ≤100A/µs, VDD ≤ V
400 V
400 V
1.5 A
0.95 A
30 W
(BR)DSS
, Tj ≤ T
JMAX.
1/8April 2001
Page 2
STD2NC40-1
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 4.16 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 1.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 275 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
= 25 °C, ID = IAR, VDD = 50 V)
j
= 250 µA, VGS = 0
I
D
= Max Rating
V
DS
= 0)
DS
GS
= 0)
V
= Max Rating, TC = 125 °C
DS
= ±30V
V
GS
400 V
1.5 A
40 mJ
1µA
50 µA
±100 nA
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
= VGS, ID = 250µA
DS
= 10V, ID = 0.7 A
V
GS
V
> I
D(on)
x R
DS
VGS=10V
DS(on)max,
234V
4.7 5.5
1.5 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
> I
V
(1)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance 22.5 pF
Reverse Transfer
Capacitance
DS
ID=0.7A
V
DS
x R
D(on)
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
1.1 S
108 pF
0.4 pF
Ω
2/8
Page 3
STD2NC40-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 12 ns
Total Gate Charge
Gate-Source Charge 2.1 nC
Gate-Drain Charge 2.4 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 27 ns
Cross-over Time 29 ns
= 200V, ID = 0.7A
DD
RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)
V
= 320V, ID = 1.5A,
DD
VGS = 10V
= 320V, ID = 1.5A,
V
DD
R
=4.7Ω, V
G
GS
= 10V
(see test circuit, Figure 5)
7.5 ns
6.1 8.2 nC
20 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (2)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.
2. Pulse width li mited by safe operating area .
Source-drain Current 1.5 A
(1)
Source-drain Current (pulsed) 6 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.5A, VGS = 0
= 1.5A, di/dt = 100A/µs,
I
SD
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
250
625
5
1.3 V
Thermal ImpedenceSafe Operating Area
ns
nC
A
3/8
Page 4
STD2NC40-1
Output Characteristics
Transconductance
Transfer Characteristics
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
4/8
Capacitance Variations
Page 5
STD2NC40-1
Normalized Gate Threshold Volta ge vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
5/8
Page 6
STD2NC40-1
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
6/8
Page 7
TO-251 (IPAK) MECHANICAL DAT A
STD2NC40-1
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
H
A
C2
L2
E
B2
= =
= =
D
B3
2
1 3
L1
A1
L
B6
C
A3
B
B5
G
= =
0068771-E
7/8
Page 8
STD2NC40-1
8/8
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