Datasheet STD2NB80 Datasheet (SGS Thomson Microelectronics)



STD2NB80

N - CHANNEL 800V - 4.6

TYPE V

ST D2N B 80 80 0 V < 6.5 Ω 1.9 A

■ TYPICALR

■ EXTREMELYHIGH dv/dtCAPABILITY

■ 100%AVALANCHETESTED

■ VERYLOW INTRINSIC CAPACITANCES

■ GATECHARGE MINIMIZED

■ ADDSUFFIX ”T4” FORORDERING INTAPE

DS(on)

DSS

= 4.6 Ω

& REEL(2500UNITS)

DESCRIPTION

Using the latesthigh voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R

per area, exceptional avalanche

DS(on)

and dv/dt capabilities and unrivalled gate charge
and switching characteristics.

R

DS(on)

I

D

Ω

- 1.9A - IPAK/DPAK

PowerMESH MOSFET

3

2

1

IPAK

TO-251

(Suffix”-1”)

DPAK

TO-252

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

3

1

APPLICATIONS

■ SWITCHMODE POWER SUPPLIES(SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

DM

P

dv/ dt(

T

(•) Pulsewidth limited by safe operating area (1)ISD≤ 2A, di/dt ≤ 200A/µs, VDD≤ V

January 1999

Drain-source Voltage (VGS=0) 800 V

DS

Dra in- gat e Volt age (RGS=20kΩ)

DGR

Gate -sourc e Vo ltage ± 30 V

GS

I

Drain Current (co ntinuous) at Tc=25oC1.9A

D

I

Drain Current (co ntinuous) at Tc=100oC1.2A

D

(•) Drain Current (pulsed) 7.6 A

Total Dissipation a t Tc=25oC55W

tot

Derating Factor 0.44 W/

1) P eak Dio de Recove ry volt age slop e 4.5 V/ns

St orage T emper ature -65 t o 1 50

stg

T

Max. Op er a t ing J unctio n T emper at u r e 150

j

800 V

,Tj≤T

(BR)DSS

JMAX

o

C

o

C

o

C

1/9

STD2NB80

THERMAL DATA

R

thj-case

Rthj-a mb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Para meter Max Val ue Uni t

I

AR

E

Ther mal Resis t an ce Junc ti on-cas e Max
Ther mal Resis t an ce Junc ti on-ambien t Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperat ure For Soldering Purpose

l

Avalanche Cu rr ent, Re petitiv e or No t - Re petitive
(pulse width limited by T

Single Pulse Avalanche Energ y

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max)

j

2.27
100

1

275

1.9 A

176 mJ

o

C/W

oC/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwisespecified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

V

(BR)DSS

Drain-sourc e

=250µAVGS=0

I

D

800 V

Break d own Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gat e- b ody Le akage
Current (V

DS

=0)

=0)

V

=MaxRating

DS

= Max Rating Tc=125oC

V

DS

= ± 30 V

V

GS

1

50

± 100 nA

ON(∗)

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

V

GS(th)

Gate Threshold

V

DS=VGSID

= 250 µA

345V

Voltage

R

DS(on)

Static Drain-source On

VGS=10V ID=1.3 A 4.6 6.5

Resistanc e

I

D(on)

On S t ate Drain Current VDS>I

D(on)xRDS(on)max

1.9 A

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

g

(∗)Forward

fs

Tr ansconduc tance

C

C

C

Input Capacit an c e

iss

Out put Capacita nce

oss

Reverse Transf er

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=1.3A 1 2 S

VDS=25V f=1MHz VGS=0 440

60

7

µA
µ

Ω

pF
pF
pF

A

2/9

STD2NB80

ELECTRICAL CHARACTERISTICS (continued)

SWITCHINGON

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

t

d(on)

t

Turn-on delay Ti me
Rise Time

r

VDD= 400 V ID=1.5A

=4.7 Ω VGS=10V

R

G

(see test circu it, figure 3)

Q
Q
Q

Total Gate Charge

g

Gat e- Source Cha rge

gs

Gate-Drain Charge

gd

VDD= 640 V ID=3 A VGS=10V 17

SWITCHINGOFF

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

t

r(Voff)

t

Off -voltage Rise Ti me

t

Fall Time

f

Cross-ov er T i me

c

VDD= 640 V ID=3 A

=4.7 Ω VGS=10V

R

G

(see test circu it, figure 5)

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, dutycycle 1.5%
(•) Pulse width limited by safeoperating area

Source-drain Curr ent

(•)

Source-drain Curr ent
(pulsed)

(∗) F orward On Voltage ISD=1.9A VGS=0 1.6 V

Reverse Reco v er y

rr

Time
Reverse Reco v er y

rr

=2.6A di/dt=100A/µs

I

SD

= 100 V Tj=150oC

V

DD

(see test circu it, figure 5)
Charge
Reverse Reco v er y
Current

12
10

24 nC

6.5

7.5

15
17
22

1.9

7.6

650

2.8

8.5

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µ

A

C

SafeOperating Area ThermalImpedance

3/9

STD2NB80

OutputCharacteristics

Transconductance

TransferCharacteristics

Static Drain-sourceOn Resistance

Gate Charge vs Gate-sourceVoltage

4/9

CapacitanceVariations

STD2NB80

Normalized Gate ThresholdVoltage vs
Temperature

Source-drainDiode Forward Characteristics

Normalized On Resistancevs Temperature

5/9

STD2NB80

Fig. 1: UnclampedInductive Load Test Circuit

Fig. 3: SwitchingTimes Test CircuitsFor

ResistiveLoad

Fig. 2: UnclampedInductiveWaveform

Fig. 4: Gate Charge test Circuit

Fig. 5: Test CircuitFor InductiveLoad Switching

And Diode Recovery Times

6/9

TO-251 (IPAK) MECHANICALDATA

STD2NB80

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

A

E

==

C2

L2

B2

==

H

C

A3

A1

B6

L

B

B5

G

==

D

B3

2

13

L1

0068771-E

7/9

STD2NB80

TO-252 (DPAK) MECHANICALDATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039

H

8/9

A

E

C2

L2

B2

==

==

DETAIL”A”

D

2

13

L4

A1

C

A2

DETAIL”A”

B

G

==

0068772-B

STD2NB80

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in thispublication are
subject to change withoutnotice. Thispublication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics.

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