Page 1
STD2NB60
N - CHANNEL ENHANCEMENT MODE
PowerMESH MOSFET
TYPE V
DSS
R
DS(on)
I
D
STD2NB60 600 V < 3.6 Ω 2.6 A
■ TYPICAL R
■ EXTREM E LY HIG H dv/ dt CA P A BILIT Y
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
DS(on)
= 3.3 Ω
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
per area, exceptional avalanche
DS(on)
and dv/dt capabilities and unrivalled gate charge
and switching char acteristics.
APPLICATIONS
■ SWITCH MODE POWE R SUPPLI ES (SMPS)
■ DC-AC CONVE RTERS FOR WELDI NG
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
IPAK
TO-251
(Suffix "- 1")
1
(Suffix "T4")
1
DPAK
TO-252
INTER NAL SCH E M ATI C DIAG RA M
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
IDM(•) Drain Current (pulsed) 10.4 A
P
dv/dt(1) Peak Diode Recovery voltage slope 4.5 V/ns
T
(•) Pulse width limited by safe operating area (1) ISD ≤2.6A, di/dt ≤ 200 A/µs, VDD ≤ V
March 1998
Drain-source Voltage (VGS = 0) 600 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc = 25 oC 2.6 A
D
I
Drain Current (continuous) at Tc = 100 oC 1.6 A
D
Total Dissipation at Tc = 25 oC50W
tot
600 V
Derating Factor 0.4 W/
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
, Tj ≤ T
(BR)DSS
JMAX
o
C
o
C
o
C
1/9
Page 2
STD2NB60
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-si n k
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
ma x, δ < 1%)
j
DD
= 50 V)
2.5
100
1.5
275
2.6 A
80 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
600 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
V
= ± 30 V
GS
1
50
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
345V
Voltage
R
DS(on)
Static Drain-source On
VGS = 10V ID =1.6 A 3.3 3.6 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
3.3 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 1.6 A 1.2 2 S
= 0 400
GS
57
520
77
7
9
µA
µA
pF
pF
pF
2/9
Page 3
STD2NB60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING O N
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
Q
Q
Q
SWITCHING O F F
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
SOURCE DRAIN DIO DE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
r
Turn-on Time
Rise Time
V
= 300 V ID = 1.6 A
DD
RG = 4.7 Ω VGS = 10 V
11
17
7
11
(see test circuit, figure 3)
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
Off-voltage Rise Time
Fall Time
t
f
Cross-over Time
c
Source-drain Current
(•)
Source-drain Current
V
= 480 V ID =3.3 A V
DD
V
= 480 V ID = 3.3 A
DD
= 4.7 Ω VGS = 10 V
R
G
(see test circuit, figure 5)
= 10 V 15
GS
6.2
5.6
11
13
18
22 nC
16
18
25
3.3
13.2
(pulsed)
(∗) Forward On Voltage ISD = 3.3 A VGS = 0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
= 3.3 A di/dt = 100 A/µs
SD
V
= 100 V Tj = 150 oC
DD
(see test circuit, figure 5)
500
2.1
Charge
Reverse Recovery
8.5
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
Safe Operating Are a Thermal Impe dance
3/9
Page 4
STD2NB60
Output Characteris tics
Transconductance
Transfer Characteris tic s
Static Drain-source On Resist a nce
Gate Charge vs Gate-source Voltage
4/9
Capacitance Variations
Page 5
STD2NB60
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteris tic s
Normalized On Resistance vs Temperature
5/9
Page 6
STD2NB60
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Tim es Test Circ uits For
Resistive Load
Fig . 2 : Unclamped Inductive Wavef orm
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
Page 7
TO-251 (IPAK) MECHANI CAL DAT A
STD2NB60
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
A
C2
L2
E
B2
= =
= =
H
C
A3
A1
B6
L
B
B5
G
= =
D
B3
2
1 3
L1
0068771-E
7/9
Page 8
STD2NB60
TO-252 (DPAK) MECHANICAL DAT A
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039
H
8/9
A
C2
L2
E
B2
==
DETAIL "A"
D
==
C
B
2
1 3
L4
A1
G
==
A2
DETAIL "A"
0068772-B
Page 9
STD2NB60
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronic s. Specificati ons mentioned
in this publication are subject to change without not ice. This publicat ion supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON M icroelectonics.
© 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
9/9
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