Datasheet STD2NA50T4, STD2NA50-1 Datasheet (SGS Thomson Microelectronics)

STD2NA50

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

PRELIMINARY DATA

■ TYPICAL R

DS(on)

= 3.25 Ω

■ ± 30V GATE TO SOURCE VOLTA GE RATING

■ 100% AVALANCHE TESTED

■ REPETITIVE AVA LANCHE DATA AT 100

o

C

■ LOW INTRINSIC CAPACITANCES

■ GATE CH ARGE MINIMIZED

■ REDUCED THRESHOLD VO LTA GE SPREA D

■ THROUGH-HO LE IPAK (TO -251) POWE R

PACKAGE IN TU BE (SUFFIX "-1")

■ SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")

APPLICATIONS

■ MEDIUM CURRENT, HIGH SPEED

SWITCHING

■ SWITCH MODE P OW ER SUP P LIE S (S MP S)

■ CONSUMER AND INDUSTRIAL LIGHTING

INTERNAL SCHEMATIC DIAGRAM

ABSOL UT E MAXIMU M RATINGS

Symbol Parameter Value Unit

V

DS

Drain-source Voltage (VGS = 0) 500 V

V

DGR

Drain- gate Voltage (RGS = 20 kΩ) 500 V

V

GS

Gate-source Voltage ± 30 V

I

D

Drain Current (continuous) at Tc = 25 oC 2.2 A

I

D

Drain Current (continuous) at Tc = 100 oC 1.4 A

I

DM

(•) Drain Current (pulsed) 8.8 A

P

tot

Total Dissipation at Tc = 25 oC45W
Derating Factor 0.36 W/

o

C

T

stg

Storage Temperature -65 to 150

o

C

T

j

Max. Operating Junction Temperature 150

o

C

(•) Pulse width limited by safe operating area

TYPE V

DSS

R

DS(on)

I

D

STD2NA50 500 V < 4 Ω 2.2 A

March 1996

3

2

1

IPAK

TO-251

(Suffix "- 1")

1

3

DPAK

TO-252

(Suffix "T4")

1/6

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-si n k

T

l

Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose

2.78
100

1

275

o

C/W

o

C/W

o

C/W

o

C

AVALANCHE CHARACTERI S TICS

Symbol Parameter Max Value Unit

I

AR

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

j

max, δ < 1%)

2.2 A

E

AS

Single Pulse Avalanche Energy
(starting T

j

= 25 oC, ID = IAR, V

DD

= 50 V)

25 mJ

E

AR

Repetitive Avalanche Energy
(pulse width limited by T

j

max, δ < 1%)

1mJ

I

AR

Avalanche Current, Repetitive or Not-Repetitive
(T

c

= 100 oC, pulse width limited by Tj max, δ < 1%)

1.4 A

ELECTRICAL CHARACTERISTICS (T

case

= 25 oC unless otherwise specified)

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source
Breakdown Voltage

ID = 250 µA V

GS

= 0 500 V

I

DSS

Zero Gate Voltage
Drain Current (V

GS

= 0)

V

DS

= Max Rating

V

DS

= Max Rating x 0.8 Tc = 125 oC

250

1000µAµA

I

GSS

Gate-Source Leakage
Current (V

DS

= 0)

V

GS

= ± 30 V 100 mA

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold Voltage V

DS

= V

GS ID

= 250 µA 2.25 3 3.75 V

R

DS(on)

Static Drain-source On
Resistance

VGS = 10 V ID = 1.1 A
V

GS

= 10 V ID = 1.1 A Tc = 100oC

3.25 4

8

Ω
Ω

I

D(on)

On State Drain Current VDS > I

D(on)

x R

DS(on)max

V

GS

= 10 V

2.2 A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

fs

(∗) Forward

Transconductance

VDS > I

D(on)

x R

DS(on)max

ID = 1.1 A 0.7 1.9 S

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

V

DS

= 25 V f = 1 MHz V

GS

= 0 300

55
15

400

70
20

pF
pF
pF

STD2NA50

2/6

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING O N

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Time
Rise Time

V

DD

= 250 V ID = 1.1 A

R

G

= 4.7 Ω VGS = 10 V

7
8

10
11

ns
ns

(di/dt)

on

Turn-on Current Slope V

DD

= 400 V ID = 2.2 A

R

G

= 47 Ω VGS = 10 V

350 A/µs

Q

g

Q

gs

Q

gd

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

V

DD

= 400 V ID =2.2 A V

GS

= 10 V 18

5.5
7

25 nC

nC
nC

SWITCHING O F F

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

f

t

c

Off-voltage Rise Time
Fall Time
Cross-over Time

V

DD

= 400 V ID = 2.2 A

R

G

= 4.7 Ω VGS = 10 V

7
7

14

10
10
20

ns
ns
ns

SOURCE DRAIN DIO DE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

(•)

Source-drain Current
Source-drain Current
(pulsed)

2.2

8.8

A
A

V

SD

(∗) Forward On Voltage ISD = 2.2 A VGS = 0 1.6 V

t

rr

Q

rr

I

RRM

Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current

I

SD

= 2.2 A di/dt = 100 A/µs

V

DD

= 100 V Tj = 150 oC

380

4.4

23

ns

µC

A

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

STD2NA50

3/6

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

A

C2

C

A3

H

A1

D

L

L2

L1

1 3

= =

B3

B

B6

B2

E

G

= =

= =

B5

2

TO-251 (IPAK) MECHANI CAL DAT A

0068771-E

STD2NA50

4/6

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039

==

D

L2

L4

1 3

==

B

E

==

B2

G

2

A

C2

C

H

A1

DETAIL "A"

A2

DETAIL "A"

TO-252 (DPAK) MECHANICAL DATA

0068772-B

STD2NA50

5/6

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of pat e nts or ot her rights o f third partie s which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SG S-THOMSON Microelectroni cs. Specifications ment ioned
in this publication are subject to cha nge wi t hout n o tice. This p u bli ca t ion sup e rsed e s and r epla ces al l inf ormat i on pr ev io us ly supplied.
SGS-THOMSON Microelectronics products are not auth orized for use as critical components in life support devices or systems without express
written approval of SGS-THOM SO N M icroelecto nics.

© 1995 SGS-THOMSON Microelectronics - All Rights Reserved

SGS-THOMSON Microelectronics GROUP OF COMPANIES

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. . .

STD2NA50

6/6