Page 1
N - CHANNEL ENHANCEMENT MODE
TYPE V
DSS
STD2NA50 500 V < 4 Ω 2.2 A
R
DS(on)
I
D
STD2NA50
POWER MOS TRANSISTOR
PRELIMINARY DATA
■ TYPICAL R
■ ± 30V GATE TO SOURCE VOLTA GE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVA LANCHE DATA AT 100
■ LOW INTRINSIC CAPACITANCES
■ GATE CH ARGE MINIMIZED
■ REDUCED THRESHOLD VO LTA GE SPREA D
■ THROUGH-HO LE IPAK (TO -251) POWE R
DS(on)
= 3.25 Ω
o
C
PACKAGE IN TU BE (SUFFIX "-1")
■ SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS
■ MEDIUM CURRENT, HIGH SPEED
SWITCHING
■ SWITCH MODE P OW ER SUP P LIE S (S MP S)
■ CONSUMER AND INDUSTRIAL LIGHTING
3
2
IPAK
TO-251
(Suffix "- 1")
1
(Suffix "T4")
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
3
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
T
(•) Pulse width limited by safe operating area
March 1996
Drain-source Voltage (VGS = 0) 500 V
DS
Drain- gate Voltage (RGS = 20 kΩ) 500 V
DGR
Gate-source Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc = 25 oC 2.2 A
D
I
Drain Current (continuous) at Tc = 100 oC 1.4 A
D
(•) Drain Current (pulsed) 8.8 A
Total Dissipation at Tc = 25 oC45W
tot
Derating Factor 0.36 W/
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
o
C
1/6
Page 2
STD2NA50
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-si n k
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
E
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
Repetitive Avalanche Energy
AR
= 25 oC, ID = IAR, V
j
(pulse width limited by T
max, δ < 1%)
j
DD
max, δ < 1%)
j
Avalanche Current, Repetitive or Not-Repetitive
(T
= 100 oC, pulse width limited by Tj max, δ < 1%)
c
= 50 V)
2.78
100
1
275
2.2 A
25 mJ
1mJ
1.4 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID = 250 µA V
= 0 500 V
GS
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-Source Leakage
Current (V
DS
= 0)
= Max Rating
V
DS
V
= Max Rating x 0.8 Tc = 125 oC
DS
= ± 30 V 100 mA
V
GS
250
1000µAµA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage V
Static Drain-source On
Resistance
= V
DS
VGS = 10 V ID = 1.1 A
V
= 10 V ID = 1.1 A Tc = 100oC
GS
On State Drain Current VDS > I
V
= 10 V
GS
GS ID
x R
D(on)
= 250 µA 2.25 3 3.75 V
3.25 4
8
DS(on)max
2.2 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 1.1 A 0.7 1.9 S
= 0 300
GS
55
15
400
70
20
Ω
Ω
pF
pF
pF
2/6
Page 3
STD2NA50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING O N
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
SWITCHING O F F
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
SOURCE DRAIN DIO DE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Turn-on Time
Rise Time
t
r
Turn-on Current Slope V
on
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
Off-voltage Rise Time
Fall Time
t
f
Cross-over Time
c
Source-drain Current
(•)
Source-drain Current
V
= 250 V ID = 1.1 A
DD
R
= 4.7 Ω VGS = 10 V
G
= 400 V ID = 2.2 A
DD
R
= 47 Ω VGS = 10 V
G
V
= 400 V ID =2.2 A V
DD
V
= 400 V ID = 2.2 A
DD
R
= 4.7 Ω VGS = 10 V
G
GS
350 A/µs
= 10 V 18
5.5
14
7
8
10
11
25 nC
7
7
7
10
10
20
2.2
8.8
(pulsed)
(∗) Forward On Voltage ISD = 2.2 A VGS = 0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
= 2.2 A di/dt = 100 A/µs
SD
V
= 100 V Tj = 150 oC
DD
380
4.4
Charge
Reverse Recovery
23
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
3/6
Page 4
STD2NA50
TO-251 (IPAK) MECHANI CAL DAT A
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
4/6
A
C2
L2
E
B2
= =
= =
H
C
A3
A1
B6
L
B
B5
G
= =
D
B3
2
1 3
L1
0068771-E
Page 5
TO-252 (DPAK) MECHANICAL DATA
STD2NA50
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039
A
C2
L2
E
B2
==
H
DETAIL "A"
D
==
C
B
2
1 3
L4
A1
G
==
A2
DETAIL "A"
0068772-B
5/6
Page 6
STD2NA50
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of pat e nts or ot her rights o f third partie s which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SG S-THOMSON Microelectroni cs. Specifications ment ioned
in this publication are subject to cha nge wi t hout n o tice. This p u bli ca t ion sup e rsed e s and r epla ces al l inf ormat i on pr ev io us ly supplied.
SGS-THOMSON Microelectronics products are not auth orized for use as critical components in life support devices or systems without express
written approval of SGS-THOM SO N M icroelecto nics.
© 1995 SGS-THOMSON Microelectronics - All Rights Reserved
Australia - Brazil - France - Germany - Hong Ko ng - Ita ly - Japa n - Korea - Mal ay sia - Mal ta - Mor oc co - The Net her l ands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
6/6
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