Datasheet STQ2HNK60ZR-AP, STF2HNK60Z, STD2HNK60Z-1 Datasheet (ST)

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N-CHANNEL 600V - 4.4Ω - 2.0A TO-92/TO-220FP/IPAK

STQ2HNK60ZR-AP

STF2HNK60Z - STD2HNK60Z-1

Zener-Protected SuperMESH™ MOSFET

TYPE V

STQ2HNK60ZR-AP
STD2HNK60Z-1
STF2HNK60Z



TYPICAL RDS(on) = 4.4Ω



EXTREMELY HIGHdv/dt CAPABILITY



ESD IMPROVED CAPABILITY



100% AVALANCHE TESTED



NEW HIGH VOLTAGE BENCHMARK



GATE CHARGE MINIMIZED

600 V
600 V
600 V

DSS

R

DS(on)

<4.8Ω
<4.8Ω
<4.8Ω

I

D

0.5 A

2.0 A

2.0 A

P

W

3W
45 W
20 W

DESCRIPTION

The SuperMESH ™ series is obtained through an
extreme optimization of ST’s well established strip­based PowerMESH™ layout. In addition to pushing
on-resistance significantly down,specialcareis tak­en to ensure a very good dv/dt capability for the
most dem anding applications. Such series comple­ments ST full range of high voltage MOSFETs in­cluding revolutionary MDm es h™ products.

TO-92 (Ammopack)

TO-220FP

3

2

1

IPAK

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS



AC ADAPTORS AND BATTERY CHARGERS



SWITH MODE POWER SUPPLIES (SMPS)

ORDER CODES

PART NUMBER MARKING PACKAGE PACKAGING

STD2HNK60Z-1 D2HNK60Z IPAK TUBE

STQ2HNK60ZR-AP Q2HNK60ZR TO-92 AMMOPAK

STF2HNK60Z F2HNK60Z TO-220FP TUBE

1/12April 2004

STQ2HNK60ZR-AP - STF2HNK 60Z - STD2HNK60Z-1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

IPAK TO-220FP TO-92

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

V

ESD(G-S)

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

V

ISO

T

j

T

stg

() Pulse width limited by safe operating area

≤ 2A,di/dt≤ 200 A/µs, VDD≤ V

(1) I

SD

(*)Current Limitedbypackage

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

600 V

600 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC=25°C
Drain Current (continuous) at TC= 100°C

()

Drain Current (pulsed) 8 8 (*) 2 A
Total Dissipation at TC=25°C

2.0 2.0 (*) 0.5 A

1.26 1.26 (*) 0.32 A

45 20 3 W
Derating Factor 0.36 0.16 0.025 W/°C
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 2000 V

Insulation Withstand Voltage (DC) -- 2500 -- V
Operating Junction Temperature

Storage Temperature

(BR)DSS,Tj

≤ T

JMAX.

-55 to 150 °C

THERMAL DATA

IPAK TO-220FP TO-92

Rthj-case Thermal Resistance Junction-case Max 2.77 6.25 -- °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 100 62.5 120 °C/W
Rthj-lead Thermal Resistance Junction-lead Max -- -- 40 °C/W

T

Maximum Lead Temperature For Soldering

l

300 300 260 °C

Purpose

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

=25°C, ID=IAR,VDD=50V)

j

2A

120 mJ

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown
Voltage

Igs=± 1mA (Open Drain) 30 V

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes hav e specifically been designed to enhance not only the device’s
ESD capability, but also to make them sa fely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to prote ct the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.

2/12

STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS O THERWISE SPECIFIED)

CASE

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=1mA,VGS= 0 600 V

Breakdown Voltage

I

I

GSS

V

GS(th)

R

DS(on)

DSS

Zero Gate Voltage
Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)
Gate Threshold Voltage
Static Drain-source On

V

=MaxRating

DS

=MaxRating,TC= 125 °C

V

DS

V

= ± 20V ±10 µA

GS

V

DS=VGS,ID

=50µA

3 3.75 4.5 V

1

50

VGS=10V,ID= 1.0 A 4.4 4.8 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(1) Forward Transconductance VDS=15V,ID= 1.0 A 1.5 S

fs

C

oss eq.

C
C
C

t

d(on)

t

d(off)

Q
Q
Q

iss
oss
rss

t

t

gd

r

f

g

gs

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(3) Equivalent Output

Capacitance
Turn-on Delay Time

Rise Time
Turn-off Delay Time
Fall Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

=25V,f=1MHz,VGS= 0 280

V

DS

38

7

VGS=0V,VDS= 0V to 480V 30 pF

=300V,ID=1.0A

V

DD

R

=4.7Ω VGS=10V

G

(Resistive Load see, Figure 3)

10
30
23
50

=480V,ID=2.0A,

V

DD

VGS=10V

11

2.25

15

6

µA
µA

pF
pF
pF

ns
ns
ns
ns

nC
nC
nC

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area .

3. C

Source-drain Current

(2)

Source-drain Current (pulsed)
ForwardOnVoltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

.

V

DSS

ISD=2.0A,VGS=0
I

SD

V

DD

(see test circuit, Figure 5)
I

SD

V

DD

(see test circuit, Figure 5)

= 2.0 A, di/dt = 100 A/µs

=20V,Tj=25°C

=13A,di/dt=100A/µs

=20V,Tj= 150°C

178
445

5

200
500

5

when VDSincreases from 0 to 80%

oss

2.0

8.0

1.6 V

A
A

ns

nC

A

ns

nC

A

3/12

STQ2HNK60ZR-AP - STF2HNK 60Z - STD2HNK60Z-1

Thermal Impedance for TO-92Safe Operating Area for TO-92

Safe Operating Area for TO-220FP

Safe Operating Area for IPAK

Thermal Impedance for TO-220FP

Thermal Impedance for IPAK

4/12

STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1

Output Characteristics

Transconductance

Transfer Characteristics

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Capacitance Variation s

5/12

STQ2HNK60ZR-AP - STF2HNK 60Z - STD2HNK60Z-1

Normalized On Resistance vs TemperatureNormalized Gate Theresho ld Voltage vs Temp.

Source-drain Diode Forward Characteristics

Maximum Avalanche Energy vs Temperature

Normalized BVDSS vs Temperature

6/12

STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

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STQ2HNK60ZR-AP - STF2HNK 60Z - STD2HNK60Z-1

TO-92 MECHANICAL DATA

DIM.

A 4.32 4.95 0.170 0.194
b 0.36 0.51 0.014 0.020
D 4.45 4.95 0.175 0.194
E 3.30 3.94 0.130 0.155
e 2.41 2.67 0.094 0.105

e1 1.14 1.40 0.044 0.055

L 12.70 15.49 0.50 0.610
R 2.16 2.41 0.085 0.094

S1 0.92 1.52 0.036 0.060

W 0.41 0.56 0.016 0.022

V5° 5°

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

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STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1

TO-92 AMMOPACK

DIM.

A1 4.45 4.95 0.170 0.194

T 3.30 3.94 0.130 0.155
T1 1.6 0.06
T2 2.3 0.09

d 0.41 0.56 0.016 0.022
P0 12.5 12.7 12.9 0.49 0.5 0.51
P2 5.65 6.35 7.05 0.22 0.25 0.27

F1, F2 2.44 2.54 2.94 0.09 0.1 0.11

delta H -2 2 -0.08 0.08

W 17.5 18 19 0.69 0.71 0.74
W0 5.7 6 6.3 0.22 0.23 0.24
W1 8.5 9 9.25 0.33 0.35 0.36
W2 0.5 0.02

H 18.5 20.5 0.72 0.80
H0 15.5 16 16.5 0.61 0.63 0.65
H1 25 0.98
D0 3.8 4 4.2 0.15 0.157 0.16

t0.90.035

L110.43

l1 3 0.11

delta P -1 1 -0.04 0.04

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

9/12

STQ2HNK60ZR-AP - STF2HNK 60Z - STD2HNK60Z-1

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0 .45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

10/12

L3

L6

L7

F1

F

G1

H

F2

123

L4

L2

L5

G

STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1

0068771-E

TO-251 (IPAK) MECHANICAL DAT A

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

H

C

A

E

= =

C2

L2

B2

= =

D

B3

2

1 3

L1

B6

A1

L

A3

B

B5

G

= =

11/12

STQ2HNK60ZR-AP - STF2HNK 60Z - STD2HNK60Z-1

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