Page 1
STD29NF03L
N-CHANNEL 30V - 0.018
LOW GATE CHARGE STripFET POWER MOSFET
TYPE V
ST D29N F 03L 30 V < 0.023 Ω 29 A
■ TYPICALR
■ TYPICALQ
■ OPTIMAL R
■ CONDUCTIONLOSSESREDUCED
■ SWITCHINGLOSSESREDUCED
DS(on)
g
DSS
= 0.018 Ω
= 18 nC @ 10V
DS(on)xQg
DESCRIPTION
This applicationspecific Power Mosfet is the third
generation of STMicroelectronics unique ”Single
Feature Size” strip-based process. The resulting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performancein termsof both conductionand
switching losses. This is extremely important for
motherboardswhere fast switching and high efficiencyare of paramount importance.
R
DS(on)
TRADE-OFF
I
D
Ω
- 29A DPAK
PRELIMINARY DATA
3
1
DPAK
TO-252
(Suffix ”T4”)
ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ SPECIFICALLYDESIGNED AND
OPTIMISEDFOR HIGH EFFICIENCYCPU
CORE DC/DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
D
I
D
I
DM
P
T
(•) Current Limited By The Package
(••) Pulse width limited by safe operating area
Dra in- sour c e Volt age (VGS=0) 30 V
DS
Dra in- gate V ol t age ( RGS=20kΩ)30V
DGR
Gat e-source Voltage
GS
(•) Dra in C u rr ent (c ontinuous) a t Tc=25oC20A
(•)Dra in C u rr ent (c ontinuous) a t Tc=100oC20A
(••) Dra in C u rr ent (puls ed ) 80 A
Tot al Dissipation at Tc=25oC45W
tot
Der ati ng Fac t or 0.3 W/
St orage Temperature -65 t o 175
stg
T
Max. O perating Junction T emper at ure 175
j
20 V
±
o
C
o
C
o
C
May 2000
1/6
Page 2
STD29NF03L
THERMAL DATA
R
thj-case
R
thj-amb
T
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Maximum Lead Te m pe ra tur e For So lder ing Purpose
l
3.33
62.5
300
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 30 V
Break dow n V o lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Cur re nt ( V
GS
Gat e- bod y L eakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
= ± 20 V ± 100 nA
GS
1
10
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µA1 V
Sta t ic Drain -s ource On
Resistance
On State Drain Current VDS>I
VGS=10V ID=15A
V
=5V ID=9A
GS
D(on)xRDS(on)ma x
0.018
0.029
0.023
0.038
29 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capac i t ance
iss
Out put Capacitanc e
oss
Reverse Tr ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)ma xID
=15 A 20 S
VDS=25V f=1MHz VGS= 0 750
270
60
µA
µ
Ω
Ω
pF
pF
pF
A
2/6
Page 3
STD29NF03L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
t
d(on)
t
Tur n-on Delay Tim e
Rise Ti me
r
VDD=15V ID=15A
R
=4.7
G
Ω
VGS=4.5V
15
206
(Resis t iv e Loa d, s ee fig. 3)
Q
Q
Q
Tot al Gat e Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD=24V ID=20A VGS=10V 18
3
5
21 nC
SWITCHINGOFF
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
t
d(off)
Tur n-of f Delay Tim e
t
Fall T ime
f
VDD=15V ID=15A
=4.7 Ω VGS=4.5V
R
G
33
36
(Resis t iv e Loa d, s ee fig. 3)
SOURCEDRAINDIODE
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
I
V
I
SDM
SD
Q
I
RRM
SD
t
Source-drain Current
(•)
Source-drain Current
20
80
(pulsed)
(∗)ForwardOnVoltage ISD=20 A VGS=0 1.2 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 20 A di/dt = 100 A /µ s
=15V Tj=150oC
V
DD
(see test circuit, fig. 5)
38
30
Charge
Reverse Recovery
1.6
Current
ns
ns
nC
nC
ns
ns
A
A
ns
nC
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operatingarea
3/6
Page 4
STD29NF03L
Fig. 1:
UnclampedInductiveLoad Test Circuit
Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad
Fig. 2:
UnclampedInductive Waveform
Fig. 4: Gate Chargetest Circuit
Fig. 5:
Test CircuitFor InductiveLoad Switching
And Diode Recovery Times
4/6
Page 5
TO-252 (DPAK) MECHANICAL DATA
STD29NF03L
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039
H
A
E
C2
L2
B2
==
==
DETAIL”A”
D
2
13
L4
A1
C
A2
DETAIL”A”
B
G
==
0068772-B
5/6
Page 6
STD29NF03L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademarkof STMicroelectronics
2000 STMicroelectronics – Printed in Italy – All Rights Reserved
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