Datasheet STD25NE03L Datasheet (SGS Thomson Microelectronics)



STD25NE03L

N - CHANNEL 30V - 0.019 Ω - 25A - TO-251/TO-252

STripFET POWER MOSFET

TYPE V

DSS

R

DS(o n)

I

D

ST D25N E 03L 30 V < 0.025 Ω 25 A

■ TYPICALR

■ 100%AVALANCHETESTED

■ LOW GATE CHARGE

■ APPLICATIONORIENTED

DS(on)

= 0.019 Ω

CHARACTERIZATION

DESCRIPTION

This PowerMOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi­stor showsextremelyhigh packing densityfor low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re­markablemanufacturingreproducibility.

APPLICATIONS

■ HIGHCURRENT, HIGH SPEEDSWITCHING

■ SOLENOIDAND RELAYDRIVERS

■ MOTORCONTROL, AUDIOAMPLIFIERS

■ DC-DC& DC-ACCONVERTERSIN HIGH

PERFORMANCE VRMs

■ AUTOMOTIVE ENVIRONMENT(INJECTION,

ABS, AIR-BG, LAMPDRIVERS,Etc.)

3

2

IPAK

TO-251

(Suffix”-1”)

1

(Suffix ”T4”)

1

DPAK

TO-252

INTERNAL SCHEMATIC DIAGRAM

3

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t

V

V

V

I

DM

P

T

(•) Pulse width limited by safe operating area (**)Value limited only by the package

March 1999

Drain-source Voltage (VGS=0) 30 V

DS

Drain- gate Voltage (RGS=20kΩ)30V

DGR

Gate-source Voltage

GS

I

Drain Current (cont in uous) at Tc=25oC20**A

D

I

Drain Current (cont in uous) at Tc=100oC18**A

D

20 V

±

(•) Drain Current (pulsed ) 100 A

Total Dissipation at Tc=25oC45W

tot

Derat ing Factor 0.3 W/
Sto rage Tem perature -65 to 175

stg

T

Max. Operati ng Junct ion Tempe r ature 175

j

o

C

o

C

o

C

1/9

STD25NE03L

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Te m perature F or Soldering Purpose

l

3.33
100

1.5

275

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 30 V

Break dow n Volt age

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gat e- bod y Leakage
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc= 125oC

V

DS

V

= ± 20 V ± 100 nA

GS

1

10

ON(∗)

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID= 250 µ A11.62.5V
Sta t ic Drain-sour c e On

Resistance

VGS=10V ID=12.5A

=5V ID= 12.5 A

V

GS

On State Drain Current VDS>I

D(on)xRDS(on )max

0.019 0. 025

0.030ΩΩ

20 A

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input Capacitanc e

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on )maxID

= 12.5 A 10 16 S

VDS=25V f=1MHz VGS= 0 1270

350
115

µ
µA

pF
pF
pF

A

2/9

STD25NE03L

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. M ax. U nit

t

d(on)

Tur n-on Delay Time
Rise Time

t

r

VDD=15V ID=19A
R

=4.7

G

Ω

VGS=4.5V

28

220

(Resis t iv e Load, see fig. 3)

Q
Q
Q

Tot al Gate Charge

g

Gat e- Source Char g e

gs

Gate-Drain Charge

gd

VDD=24V ID=38A VGS=5V 21

9

11

29 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. M ax. U nit

t

d(off)

Tur n-of f Delay Time

t

Fall T ime

f

VDD=15V ID=19A

=4.7 Ω VGS=4.5V

R

G

45
35

(Resis t iv e Load, see fig. 3)

t

r(Voff)

t

t

Off-volt age Rise T ime
Fall T ime

f

Cross-over Time

c

VDD=24V ID=38A

=4.7 Ω VGS=4.5V

R

G

(Indu ct iv e Load, see fig. 5)

30
85

125

SOURCEDRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. M ax. U nit

I

V

I

SDM

SD

Q

I

RRM

SD

t

Source-drain Current

(•)

Source-drain Current

20

100

(pulsed)

(∗)ForwardOnVoltage ISD=25A VGS=0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 38 A di/dt = 100 A/µs

=15V Tj=150oC

V

DD

(see test circuit, fig. 5)

45

60
Charge
Reverse Recovery

2.5

Current

ns
ns

nC
nC

ns
ns

ns
ns
ns

A
A

ns

nC

A

(∗) Pulsed:Pulse duration = 300µs, dutycycle 1.5%
(•) Pulse width limited by safeoperating area

SafeOperating Area ThermalImpedance

3/9

STD25NE03L

OutputCharacteristics

Transconductance

TransferCharacteristics

Static Drain-sourceOn Resistance

Gate Charge vs Gate-sourceVoltage

4/9

CapacitanceVariations

STD25NE03L

NormalizedGate ThresholdVoltage vs
Temperature

Source-drainDiode Forward Characteristics

NormalizedOn Resistancevs Temperature

5/9

STD25NE03L

Fig. 1:

UnclampedInductiveLoad TestCircuit

Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad

Fig. 2:

UnclampedInductiveWaveform

Fig. 4: Gate Charge test Circuit

Fig. 5:

Test Circuit For InductiveLoad Switching

And Diode Recovery Times

6/9

TO-251 (IPAK) MECHANICALDATA

STD25NE03L

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370

L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

A

E

==

C2

L2

B2

==

H

C

A3

A1

B6

L

B

B5

G

==

D

B3

2

13

L1

0068771-E

7/9

STD25NE03L

TO-252 (DPAK) MECHANICALDATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397

L2 0.8 0.031
L4 0.6 1 0.023 0.039

8/9

H

A

E

==

C2

L2

B2

==

DETAIL”A”

D

2

13

L4

A1

C

A2

DETAIL”A”

B

G

==

0068772-B

STD25NE03L

Information furnished is believed tobeaccurateand reliable. However, STMicroelectronics assumes no responsibilityforthe consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publicationare
subjecttochange without notice.Thispublication supersedesand replacesall information previouslysupplied.STMicroelectronics products
are not authorizedfor useas critical components in lifesupport devices or systems without express written approval of STMicroelectronics.

The STlogo is a trademark of STMicroelectronics

 1999 STMicroelectronics – Printed in Italy – All Rights Reserved

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China -France - Germany - Italy- Japan- Korea- Malaysia - Malta - Mexico - Morocco - The Netherlands -

Singapore - Spain - Sweden - Switzerland - Taiwan- Thailand - UnitedKingdom - U.S.A.

http://www.st.com

.

9/9