Datasheet STD20N06 Datasheet (SGS Thomson Microelectronics)

STD20N06

N - CHANNEL ENHANCEMENT MODE

”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR

PRELIMINARY DATA

TYPE V

DSS

R

DS(on)

I

D

STD 20N06 60 V < 0.03 Ω 20 A (*)

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ HIGH CURRENT CAPABILITY

o

■ 175

■ HIGH dV/dt RUGGEDNESS

■ THROUGH-HOLE IPAK (TO-251) POWER

C OPERATING TEMPERATURE

DS(on)

= 0.026 Ω

o

C

PACKAGE IN TUBE (SUFFIX ”-1”)

■ SURFACE-MOUNTINGDPAK (TO-252)

POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)

DESCRIPTION

This series of POWER MOSFETS represents the
latest development in low voltage technology.
The ultra high cell density process (UHD) produ­ced with fine geometries on advanced equipment
gives the device extremely low R

DS(on)

as well as
good switching performance and high avalanche
energy capability.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ POWER MOTOR CONTROL

■ DC-DC & DC-AC CONVERTERS

■ SYNCRONOUS RECTIFICATION

3

2

1

IPAK

TO-251

(Suffix ”-1”)

INTERNAL SCHEMATIC DIAGRAM

1

DPAK

TO-252

(Suffix ”T4”)

3

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

V

V

V

I

DM

P

T

(*) Currentlimited by the package
(•) Pulse width limited by safeoperating area (*)

March 1995

Drain - s ource Voltage (VGS=0) 60 V

DS

Drain- gate Voltage (RGS=20kΩ)60V

DGR

Gate-source Voltage ± 20 V

GS

Drain Current (continuous) at Tc=25oC20A

I

D

Drain Current (continuous) at Tc=100oC14A

I

D

(•) Drain Current (pulsed) 80 A

Total Di ssipation at Tc=25oC60W

tot

Derat ing Factor 0.4 W/
St or a ge Tem perature -65 to 175

stg

Max. Operating Junction Temperature 175

T

j

o
o

o

C
C
C

1/10

STD20N06

THERMAL DATA

R

thj-case

R

thj-amb

R

thj-amb

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Valu e Uni t

I

AR

E

E

I

AR

Thermal Res is tance Junction- c ase Max
Thermal Res istance Junc tion-am bie nt Max
Thermal Res is tance Case-sink Typ
Maximum Lead Tem perature Fo r Soldering Pu r pose

l

Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng T

=25oC, ID=IAR, L = 330 µH, VDD=25V)

j

(see waveforms, figure 2)
Repetitive Avalanc he Energ y

AR

(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive

(Tc= 100oC, pulse width limit ed by Tjmax, δ <1%)

2.5

100

1.5

300

20 A

80 mJ

20 mJ

14 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

OFF

Symbol Parameter Test Condition s Min. Typ. Max. U nit

V

(BR)DSS

Drain - s ource

ID=250µAVGS=0 60 V

Break d own Volta ge

I

DSS

I

GSS

Zer o Gate Volt age
Drain Current (VGS=0)

Gat e- body Leak age

VDS=MaxRating
VDS= Max Rating x 0 .8 Tc=125oC

250

1000µAµA

VGS= ± 20 V ± 10 0 nA

Current (VDS=0)

ON (∗)

Symbol Parameter Test Condition s Min. Typ. Max. U nit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID=250µA234V
St at ic Drain-s our ce O n

Resistance
On State Drain Current VDS>I

VGS=10V ID=10A
VGS=10V ID=10A Tc= 100oC

D(on)xRDS(on)max

0.026 0.03

0.06

20 A

VGS=10V

DYNAMIC

Symbol Parameter Test Condition s Min. Typ. Max. U nit

(∗)Forward

g

fs

Tr ansconductance

C
C
C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=10A 11 16 S

VDS=25V f=1MHz VGS= 0 2000

350

80

2800

450
120

Ω
Ω

pF
pF
pF

2/10

STD20N06

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Condition s Min. Typ. Max. U nit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on T im e

t

Rise Time

r

Turn-on C urrent S lope VDD=48V ID=20A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Test Condition s Min. Typ. Max. U nit

t

r(Voff)

t

Off -voltage R ise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAIN DIODE

VDD=30V ID=10A
RG=50 Ω VGS=10V

45

28065380

(see test circuit, figure 3)

240 A/µs
RG=50 Ω VGS=10V
(see test circuit, figure 5)

VDD=40V ID=20A VGS=10V 60

10
20

VDD=48V ID=20A
RG=50 Ω VGS=10V
(see test circuit, figure 5)

55
125
200

80 nC

75
170
270

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Condition s Min. Typ. Max. U nit

I

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

20

80

(pulsed)

V

(∗) Forward On Volt age ISD=20A VGS=0 1.5 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD= 20 A di/dt = 100 A/µs
VDD=30V Tj=150oC
(see test circuit, figure 5)

80

0.3

Charge

I

RRM

Reverse Recovery

7

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Area Thermal Impedance

A
A

ns

µC

A

3/10

STD20N06

Derating Curve

Transfer Characteristics

Output Characteristics

Transconductance

Static Drain-source On Resistance

4/10

Gate Charge vs Gate-source Voltage

Capacitance Variations Normalized Gate Threshold Voltage vs

Temperature

Normalized On Resistance vs Temperature Turn-on Current Slope

STD20N06

Cross-over TimeTurn-off Drain-source Voltage Slope

5/10

STD20N06

Switching SafeOperating Area Accidental Overload Area

Source-drain Diode Forward Characteristics

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms

6/10

STD20N06

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge Test Circuit

7/10

STD20N06

TO-251 (IPAK) MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023

C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

8/10

A

E

==

C2

L2

B2

==

H

C

A3

A1

B6

L

B

B5

G

==

D

B3

2

13

L1

0068771-E

TO-252 (DPAK) MECHANICAL DATA

STD20N06

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023

C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039

H

A

E

==

C2

L2

B2

==

DETAIL”A”

D

2

13

L4

A1

C

A2

DETAIL”A”

B

G

==

0068772-B

9/10

STD20N06

Information furnished isbelieved to be accurateand reliable. However, SGS-THOMSONMicroelectronics assumes noresponsability for the
consequences of use of suchinformation nor for any infringementof patents orother rights of third parties whichmay results from its use. No
license isgrantedby implicationor otherwiseunder anypatentor patentrights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publicationare subjectto change without notice.This publication supersedes and replacesall information previouslysupplied.
SGS-THOMSON Microelectronicsproducts arenotauthorizedfor useascriticalcomponents inlifesupportdevices orsystemswithout express
written approvalof SGS-THOMSON Microelectonics.

 1994 SGS-THOMSONMicroelectronics - All Rights Reserved

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