Datasheet STP2NC70ZFP, STP2NC70Z, STD1NC70Z-1, STD1NC70Z Datasheet (SGS Thomson Microelectronics)

STP2NC70Z , STP 2NC70 Z FP

STD1NC70Z, STD1NC70Z-1

N-CH A NNEL 700V - 7.3Ω - 1.4A TO-220/FP/DPAK/IPAK

Zener-Protected PowerMESH™III MOSFET

TYPE V

STP2NC70Z
STP2NC70ZFP
STD1NC70Z
STD1NC70Z-1

■ TYPICAL R

■ EXTREMELY HIGH dv /d t CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPAC ITANCES

700 V
700 V
700 V
700 V

(on) = 7.3 Ω

DS

DSS

R

DS(on)

< 8.5 Ω
< 8.5 Ω
< 8.5 Ω
< 8.5 Ω

I

D

1.4 A

1.4 A

1.4 A

1.4 A

Pw

50 W
25 W
45 W
45 W

DESCRIPTION

The third generation of MESH O VERLAY™ Power
MOSFETs for very high voltage exhibits unsur­passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil­ity with higher ruggedness performance as request­ed by a large variety of single-switch applications..

APPLICATIONS

■ SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

■ WELDING EQUIPMENT

TO-220

IPAK

3

2

1

TO-220FP

3

2

1

DPAK

3

1

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP2NC70Z P2NC70Z TO-220 TUBE
STP2NC70ZFP P2NC70ZFP TO-220FP TUBE
STD1NC70ZT4 D1NC70Z DPAK TAPE & REEL

STD1NC70Z-1 D1NC70Z IPAK TUBE

1/13February 2002

STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP2NC70Z STP2NC70ZFP

V

I

V

V

DM

P

DS

DGR

GS

I

D

I

D

TOT

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

700 V
700 V

Gate- source Voltage ± 25 V

Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C

(l)

Drain Current (pulsed) 5.6 5.6 (*) 5.6 A
Total Dissipation at TC = 25°C

1.4 1.4 (*) 1.4 A

0.9 0.9 (*) 0.9 A

50 25 45 W

Derating Factor 0.4 0.2 0.36 W/°C

I

GS

V

ESD(G-S)

Gate-source Current (DC) ± 50 mA
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 2000 V

dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns

V

ISO

T

j

T

stg

(l) Pulse wi dth limited by safe operating area
(1) I

≤10A, di/dt ≤200A/µs, VDD ≤ V

SD

(*) Limited only by maximum temperature allowed

Insulation Withstand Voltage (DC) - 2500 - V
Operating Junction Temperature

Storage Temperature

, Tj ≤ T

(BR)DSS

JMAX.

-65 to 150

-65 to 150

STD1NC70Z

STD1NC70Z-1

°C
°C

THERMA L D ATA

TO-220 TO-220FP

Rthj-case Thermal Resistance Junction-case Max 2.5 5 2.75 °C/W

Rthj-pcb Thermal Resistance Junction-pcb Max (for SMD) (#) 100 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose

300

DPAK

IPAK

275

°C

AVALANCHE CHARACTERISTICS

Symbol Par amet er Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID = IAR, VDD = 50 V)

j

1.4 A

60 mJ

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 25 V

Voltage

αT Voltage Thermal Coefficient T=25°C Note(3) 1.3

Note : 3 . ∆V
(#) When mounted on minimum Footprint

= αT (25°-T) BV

BV

GSO

(25°)

10

-4

/°C

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost­effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.

2/13

STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source
Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Zero Gate Voltage
Drain Current (V

GS

= 0)

Gate-body Leakage
Current (V

DS

= 0)
Gate Threshold Voltage
Static Drain-source On

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(1) Forward Transconductance VDS = 15 V, ID= 0.7 A 1.2 S

fs

C

oss eq.

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(3) Equivalent Output

Capacitance

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

t

r

gs
gd

Turn-on Delay Time
Rise Time

Total Gate Charge

g

Gate-Source Charge
Gate-Drain Charge

ID = 250 µA, VGS = 0 700 V

V

= Max Rating

DS

VDS = Max Rating, TC = 125 °C
V

= ± 20V ±10 µA

GS

V

= VGS, ID = 250µA

DS

345V

1

50

VGS = 10V, ID = 0.7 A 7.3 8.5 Ω

= 25V, f = 1 MHz, VGS = 0 305

V

DS

34

3.6

VGS = 0V, VDS = 0V to 560V 28 pF

VDD = 350 V, ID = 0.8 A
RG= 4.7Ω VGS = 10 V

11

8

(Resistive Load see, Figure 3)

= 560V, ID = 1.6 A,

V

DD

VGS = 10V

8
2

12

3.8

µA
µA

pF
pF
pF

ns
ns

nC
nC
nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off Delay Time

t

f

Fall Time

VDD = 350 V, ID = 0.8 A
RG=4.7Ω VGS = 10 V

27
30

(Resistive Load see, Figure 3)

t

r(Voff)

t

t

= 560V, ID = 1.6 A,

Off-voltage Rise Time

f

c

Fall Time
Cross-over Time

V

DD

RG=4.7Ω, V

GS

= 10V

(Inductive Load see, Figure 5)

20

5

25

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pu l se duration = 300 µs, duty c ycle 1.5 %.

2. Pulse width li mited by safe operating area.

3. C

Source-drain Current

(2)

Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

V

.

DSS

ISD = 1.4 A, VGS = 0
ISD = 1.6 A, di/dt = 100A/µs

V

DD

(see test circuit, Figure 5)

= 30V, Tj = 150°C

370

1.3

6.8

when VDS increase s fr om 0 to 80%

oss

1.4

5.6

1.6 V

ns
ns

ns
ns
ns

A
A

ns

µC

A

3/13

STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1

Safe Operating Area For TO-220 Thermal Impedance For TO-220

Safe Operating Area For TO-220FP

Safe Operating Area For DPAK/IPAK Thermal Impedance For DPAK/IPAK

Thermal Impedance For TO-220FP

4/13

STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1

Output Characteristics

Transconductance

Transfer Characteristics

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

5/13

STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1

Normalized Gate Threshold Volta ge vs Temp.

Source-drain Diode Forward Characteristics

Normalized On Resistance vs Temperatur e

Normalized BVDSS vs Temperature

6/13

STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

7/13

STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1

E

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP . MAX. MIN. TY P . MAX.

mm inch

A

C

D

8/13

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

F

H2

G

F2

L4

P011C

STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1

TO-220FP MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L4

9/13

STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1

TO-251 (IPAK) MECHANICAL DAT A

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

H

10/13

A

C2

L2

E

B2

= =

= =

D

B3

2

1 3

L1

A1

L

B6

C

A3

B

B5

G

= =

0068771-E

STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1

TO-252 (DPAK) MECHANICAL DATA

DIM.

A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0

MIN. TYP. MAX. MIN. TYP. MAX.

o

mm inch

o

8

o

0

o

0

P032P_B

11/13

STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

All dimensions

are in millimeters

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0 .059
C 12.8 13.2 0.504 0.520

D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968

T 22.4 0. 881

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

* on sales type

12/13

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

2500 2500

STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1

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13/13