Page 1
STD17N05L
Obsolete Product(s) - Obsolete Product(s)
STD17N06L
N - CHANNEL ENHANCEMENT MODE
LOW THRESHOLD POWER MOS TRANSISTOR
TYPE V
DSS
R
DS(on)
I
D
STD17N05L 50 V < 0.085 Ω 17 A
STD17N06L 60 V < 0.085 Ω 17 A
■ TYPICAL R
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ LOW GATE CHARGE
■ LOGIC LEVEL COMPATIBLE INPUT
o
■ 175
■ APPLICATION ORIENTED
C OPERATING TEMPERATURE
DS(on)
= 0.065 Ω
o
C
CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1")
■ SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
IPAK
TO-251
(Suffix "-1")
INTERNAL SCHEMATIC DIAGRAM
1
DPAK
TO-252
(Suffix "T4")
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STD17N05L STD17N06L
V
V
V
I
DM
P
T
(•) Pulse width limited by safe operating area
January 1995
Drain-source Voltage (VGS = 0) 50 60 V
DS
Drain- gate Voltage (RGS = 20 kΩ)5060V
DGR
Gate-source Voltage ± 15 V
GS
I
Drain Current (continuous) at Tc = 25 oC17A
D
I
Drain Current (continuous) at Tc = 100 oC12A
D
(•) Drain Current (pulsed) 68 A
Total Dissipation at Tc = 25 oC55W
tot
Derating Factor 0.37 W/
Stor age Tempe rat ure -65 to 17 5
stg
T
Max. Operating Junction Temperature 175
j
o
C
o
C
o
C
1/10
Page 2
Obsolete Product(s) - Obsolete Product(s)
STD17N05L/STD17N06L
THERMAL DATA
R
thj-case
R
thj-amb
R
th c-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
E
I
AR
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Max im u m Le ad T em perature F or So l de rin g P ur p ose
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Sing le Pul se Ava lan che Energy
AS
(starting Tj = 25 oC, ID = IAR, V
Repet iti ve Av alan che En erg y
AR
DD
= 25 V)
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
2.73
100
1.5
275
17 A
60 mJ
15 mJ
12 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. U nit
V
(BR) DSS
I
DSS
I
GSS
Drain-source
Bre akdow n Vol tage
Zero Ga te V ol t ag e
Drain Current (V
GS
Gate -body Leaka ge
ID = 250 µA V
= 0
GS
for STD17N05L
for STD17N06L
50
60
VDS = Max Rating
= 0)
VDS = Max Rating x 0.8 Tc = 125 oC
VGS = ± 15 V ± 10 0 nA
V
V
250
1000µAµA
Current (VDS = 0)
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. U nit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage V
Stat ic Dra in-s ourc e On
Resistance
= VGS ID = 250 µA11.62.5V
DS
VGS = 5 V ID = 8.5 A
V
= 5 V ID = 8.5 A Tc = 100 oC
GS
On State Dra in C urr e nt VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
0.065 0.085
0.17
17 A
Ω
Ω
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. U nit
g
(∗)Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 8.5 A 5 12 S
= 0 700
GS
250
70
1000
350
100
pF
pF
pF
2/10
Page 3
Obsolete Product(s) - Obsolete Product(s)
STD17N05L/STD17N06L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symbol Parameter Test Condition s Min. Typ. Max. U nit
t
d(on)
(di/dt)
Q
Q
Q
SWITCHING INDUCTIVE LOAD
Symbol Parameter Test Condition s Min. Typ. Max. U nit
t
r(Voff)
t
SOURCE DRAIN DIODE
Turn-on Time
t
Rise Time
r
Turn-on Current Slope V
on
Tot al G a te C ha r ge
g
Gate -Sou rce Ch arge
gs
Gate-Drain Charge
gd
Off-voltage Rise Time
t
Fall Time
f
Cross-over Time
c
V
= 30 V ID = 8.5 A
DD
R
= 50 Ω VGS = 5 V
GS
(see test circuit, figure 3)
= 40 V ID = 17 A
DD
R
= 50 Ω VGS = 5 V
GS
(see test circuit, figure 5)
VDD = 40 V ID = 17 A V
V
= 40 V ID = 17 A
DD
R
= 50 Ω VGS = 5 V
GS
(see test circuit, figure 5)
= 5 V 18
GS
60
35090500
130 A/µs
26 nC
6
9
70
100
180
100
150
260
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Condition s Min. Typ. Max. U nit
I
I
SDM
SD
Source-drain Current
(•)
Source-drain Current
17
68
(pulsed)
V
(∗) F or w ar d On V ol t ag e ISD = 17 A VGS = 0 1.5 V
SD
t
Q
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
= 17 A di/dt = 100 A/µs
SD
VDD = 30 V Tj = 150 oC
(see test circuit, figure 5)
65
0.13
Charge
I
RRM
Reverse Recovery
4
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
A
A
ns
µC
A
3/10
Page 4
Obsolete Product(s) - Obsolete Product(s)
STD17N05L/STD17N06L
Derating Curve
Transfer Characteristics
Output Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
4/10
Page 5
Obsolete Product(s) - Obsolete Product(s)
STD17N05L/STD17N06L
Capacitance Variations Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature Turn-on Current Slope
Cross-over TimeTurn-off Drain-source Voltage Slope
5/10
Page 6
Obsolete Product(s) - Obsolete Product(s)
STD17N05L/STD17N06L
Switching Safe Operating Area Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms
6/10
Page 7
Obsolete Product(s) - Obsolete Product(s)
STD17N05L/STD17N06L
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge Test Circuit
7/10
Page 8
Obsolete Product(s) - Obsolete Product(s)
STD17N05L/STD17N06L
TO-251 (IPAK) MECHANICAL DATA
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
H
C
A
C2
A1
B6
L
B
L2
E
B2
= =
= =
D
B3
2
1 3
L1
A3
B5
G
= =
0068771-E
8/10
Page 9
Obsolete Product(s) - Obsolete Product(s)
TO-252 (DPAK) MECHANICAL DATA
STD17N05L/STD17N06L
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039
H
A
C2
L2
E
B2
==
==
DETAIL "A"
D
2
1 3
L4
A1
C
B
G
==
A2
DETAIL "A"
0068772-B
9/10
Page 10
Obsolete Product(s) - Obsolete Product(s)
STD17N05L/STD17N06L
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
10/10
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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