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TRANSISTOR(NPN)
FEATURES
z
z
z
z High DC current gain and large current capability
z
Low saturation medium current application
Extremely low collector saturation voltage
Suitable for low voltage large current drivers
Low on resistance : RON=0.6Ω(Max.) (IB=1mA)
Marking:123
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
STD1 23S
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
Tj
T
CBO
CEO
EBO
stg
Collector-Base Voltage 20 V
Collector-Emitter Voltage 15 V
Emitter-Base Voltage 6.5 V
Collector Current -Continuous 1 A
Collector Power Dissipation 350 mW
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR) CBO
V
(BR) CEOIC
V
(BR) EBO
I
CBO
IC=50μA, IE=0
=1mA, IB=0 15 V
IE= 50μA, IC=0
VCB= 20 V, IE=0 0.1
20 V
6.5 V
A
μ
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
On resistance
１
JinYu
semiconductor
VEB= 6V, IC=0 0.1
I
EBO
VCE=1V, IC= 100mA 150
h
FE
(sat) IC=500mA, IB= 50mA 0.3 V
V
CE
V
f
T
Cob
R
ON
=5V, IC=50mA 260 MHz
CE
VCB=10V, IE=0, f=1MHz 5 pF
f=1KHz,I
V
IN
=0.3V
=1mA,
B
0.6 Ω
www.htsemi.com
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μA
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STD1 23S
２
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
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